97results about How to "Low budget" patented technology

Semiconductor devices, structures and systems that utilize a polysilazane-based silicon oxide layer or fill, and methods of making the oxide layer are disclosed. In one embodiment, a polysilazane solution is deposited on a substrate and processed with ozone in a wet oxidation at low temperature to chemically modify the polysilazane material to a silicon oxide layer.

A method is provided for forming a low-temperature vertical gate insulator in a vertical thin-film transistor (V-TFT) fabrication process. The method comprises: forming a gate, having vertical sidewalls and a top surface, overlying a substrate insulation layer; depositing a silicon oxide thin-film gate insulator overlying the gate; plasma oxidizing the gate insulator at a temperature of less than 400° C., using a high-density plasma source; forming a first source / drain region overlying the gate top surface; forming a second source / drain region overlying the substrate insulation layer, adjacent a first gate sidewall; and, forming a channel region overlying the first gate sidewall, in the gate insulator interposed between the first and second source / drain regions. When the silicon oxide thin-film gate insulator is deposited overlying the gate a Si oxide layer, a low temperature deposition process can be used, so that a step-coverage of greater than 65% can be obtained.

The present invention provides a stabilized fine textured metal microstructure that constitutes a durable activated surface usable for bonding a 3D stacked chip. A fine-grain layer that resists self anneal enables metal to metal bonding at moderate time and temperature and wider process flexibility.

The present invention provides an antenna array structure which includes multiple array elements, and the antenna array structure is using for the application of the WLAN (wireless local area network) or WMAN (wireless metro area network.) Furthermore, the array elements of the present invention are phased arrays or attenuated arrays, and when configuration with different type of the array element is used, the corresponding BFN (beam forming network) can also be implemented in various possibilities. With all the configuration of the present invention, the manufacturers can have a stable array structure for their applications.

A high-density plasma hydrogenation method is provided. Generally, the method comprises: forming a silicon (Si) / oxide stack layer; plasma oxidizing the Si / oxide stack at a temperature of less than 400° C., using a high density plasma source, such as an inductively coupled plasma (ICP) source; introducing an atmosphere including H2 at a system pressure up to 500 milliTorr; hydrogenating the stack at a temperature of less than 400 degrees C., using the high density plasma source; and forming an electrode overlying the oxide. The electrode may be formed either before or after the hydrogenation. The Si / oxide stack may be formed in a number of ways. In one aspect, a Si layer is formed, and the silicon layer is plasma oxidized at a temperature of less than 400 degrees C., using an ICP source. The oxide formation, additional oxidation, and hydrogenation steps can be conducted in-situ in a common chamber.

Manufacturing a semiconductor device involves forming (200) a sacrificial layer where a micro cavity is to be located, forming (210) a metal layer of thickness greater than 1 micron over the sacrificial layer, forming (220) a porous layer from the metal layer, the porous layer having pores of length greater than ten times their breadth, and having a breadth in the range 10 nm-500 nanometers. The pores can be created by anodising, electrodeposition or dealloying. Then the sacrificial layer can be removed (230) through the porous layer, to form the micro cavity, and pores can be sealed (240). Encapsulating MEMS devices with a porous layer can reduce costs by avoiding using photolithography for shaping the access holes since the sacrificial layer is removed through the porous membrane.

Silicon oxynitride compositions are described herein. These compositions are typically deposited onto substrates using a nitrogen plasma-based, reactive sputtering method. Depending on their composition, these coatings can be used for field emission suppression, dielectric applications, reflection control, and surface passivation.

Methods are provided for forming silicon dioxide (SiO2) on a silicon carbide (SiC) substrate. The method comprises: providing a SiC substrate; supplying an atmosphere including oxygen; performing a high-density (HD) plasma-based process; and, forming a SiO2 layer overlying the SiC substrate. Typically, performing the HD plasma-based process includes connecting a top electrode to an inductively coupled HD plasma source. In one aspect, SiO2 is grown on the SiC substrate. Then, an HD plasma oxidation process is performed that creates a reactive oxygen species and breaks the Si—C bonds in the SiC substrate, to form free Si and C atoms in the SiC substrate. The free Si atoms in the SiC substrate are bonded to the HD plasma-generated reactive oxygen species, and the SiO2 layer is grown.