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177results about How to "Clean interface" patented technology

Preparation method for silver-zinc oxide nano-composite structure

The invention discloses a preparation method for a silver-zinc oxide nano-composite structure. The method is simple, efficient and environmentally friendly. The method comprises the steps that the characteristic that electric charges carried by zinc oxide and electric charges carried by nano-silver are opposite is utilized, and nano-zinc oxide powder carrying the positive electric charges is added into nano-silver sol with the negative electric charges in a certain proportion; ultrasonic dispersion or mechanical agitation is performed, so that the nano-zinc oxide powder and the nano-silver sol are fully mixed; on the basis of electrostatic interaction, nano-silver particles are loaded onto the surface of the nano-zinc oxide; afterwards, the obtained solid product is separated through centrifugation or filtration, and the solid product is washed several times with ethyl alcohol and dried to obtain the target product. The preparation method is simple and easy and convenient to implement, the range of the raw materials is wide, neither a surface active agent nor a molecular coupling agent needs to be added, the method is low in energy consumption, free of pollution and environmentally friendly, the product is even in load, the size of loaded silver particles and the amount of load can be regulated and controlled, the interface is clean, and the method is beneficial to accurate regulation and control over the antibacterial activity, photocatalytic properties and surface-enhanced Raman scattering properties of silver-zinc oxide nano-composite structure.
Owner:QINGDAO UNIV OF SCI & TECH

Method for synthesizing TiCx particle enhanced nickel base composite material by reaction in-situ

The invention relates to a method for synthesizing TiCx particle enhanced nickel base composite material by reaction in-situ, belonging to the field of composite materials. A preparation process comprises the preparation of mixed powder, the preparation of powder chip as well as a smelting and casting process, wherein in the preparation of mixed powder, the powder material consists of Ti, C, Al, Fe and Mo, wherein Al powder accounts for 8-12wt.%, Fe powder accounts for 12-15wt.%, Mo powder accounts for 3-5wt.%, graphite C powder accounts for 8-12wt.% and the balance of Ti powder, the weight ratio of Ti powder to C powder in the powder satisfies a relation of (5-6.7):1; in the preparation of powder chip, Ni foil is rolled into a cylinder with the diameter of 16-25mm, the mixed powder after ball milling and material mixing is filled into the cylinder; and in the smelting and casting process, TiC[X] / Ni composite material is prepared by using frequency induction melting furnace in vacuum. The invention has the advantages that the prepared TiCx / Ni composite material has the volume fraction of TiC[X] / Ni of 20-40%, the density of the TiCx / Ni composite material is approximate to 100%; and the high temperature strength and rigidity of the TiCx / Ni composite material are remarkably higher than that of normal nickel base superalloy.
Owner:NORTH CHINA ELECTRIC POWER UNIV (BAODING) +1

Method for large-area transfer of two-dimensional transition metal chalcogenide film and application thereof

The invention discloses a method for large-area transfer of a two-dimensional transition metal chalcogenide film and an application thereof. The method comprises the following steps: preparing a large-area two-dimensional transition metal chalcogenide film; sequentially depositing a single-layer organic dye molecular film and a dielectric film on the surface of the transition metal chalcogenide film by adopting a Van der Waals epitaxial growth technology and an atomic layer deposition technology, and arranging a layer of polymer film; and carrying out separation to obtain a transition metal chalcogenide/single-layer organic dye molecule/dielectric/polymer composite film based on a water permeation separation principle, combining the composite film with a target substrate, and removing thepolymer film to finish transfer. The transferred two-dimensional transition metal chalcogenide film has large-area integrity and a pollution-free interface. The transferred two-dimensional transitionmetal chalcogenide/single-layer organic dye molecular film-dielectric film can be used as a channel layer and a dielectric layer of an electronic device, has extremely low electric leakage and interface state, and can reduce the working voltage of the electronic device.
Owner:NANJING UNIV

High-quality graphene/two-dimensional metal carbide crystal vertical heterostructure material and preparation method thereof

ActiveCN109019569AHas a clean interfaceConsistent crystal orientationMaterial nanotechnologyGrapheneMetal foilCopper foil
The invention relates to the field of new materials, particularly to a high-quality graphene / two-dimensional metal carbide crystal vertical heterostructure material and a preparation method thereof. According to the preparation method, a bimetal laminate formed by a copper foil / metal foil sheet is used as a growth substrate, graphene grows at a high temperature through catalytic cracking of a carbon source by using a CVD technology, and a two-dimensional transition metal carbide crystal grows under the graphene by increasing the temperature, or graphene and a two-dimensional transition metal carbide directly grow at a temperature of higher than the melting point of copper so as to prepare a graphene / two-dimensional metal carbide vertical heterostructure; and subsequently the copper substrate is etched off to obtain the graphene / two-dimensional metal carbide vertical heterostructure. According to the present invention, the foundation is established for the research and applications of high-quality graphene / two-dimensional metal carbide vertical heterostructure in the fields of catalysis, laser detection, transparent electric-conduction films, thermal management, two-dimensional superconductivity, high transparent Josephson junctions.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI

Endogenous particle hybrid reinforced aluminum matrix composite and preparation method thereof

The invention provides an endogenous particle hybrid reinforced aluminum matrix composite and a preparation method thereof and belongs to the technical field of composites. The endogenous particle hybrid reinforced aluminum matrix composite is prepared from the following components in percentage by weight: 0-15% of Si, 0-8% of Cu, 0-5% of Mg, 0.1-15% of TiB2 particles, 0.1-10% of TiC particles and the balance of Al. The endogenous particle hybrid reinforced aluminum matrix composite comprises the following steps: (1) adding commercially pure aluminum to a crucible, melting an aluminum ingot and heating in the presence of argon; (2) evenly mixing AlTi20 powder and B4C particles as well as Ce2O3 together and drying; (3) injecting the mixture into the melt by use of an aluminum alloy refining rotary injection device, controlling the flow of the argon and performing mechanical stirring; (4) after the reaction is terminated, withdrawing from the rotary injection device and standing; (5) pouring into a die to obtain the endogenous particle hybrid reinforced aluminum matrix composite. The aluminum matrix composite prepared by use of the method is clean in interface, controllable in particle size and even in particle distribution, and meanwhile, the preparation method has the advantages of simple preparation process and suitability large-scale production.
Owner:赵遵成
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