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Method for gluing quantum dot film and quantum dot films

A technology of colloidal quantum dots and quantum dots, applied in the field of quantum dots, can solve the problems of affecting the performance of quantum dots, many by-products, etc., and achieve the effects of short time consumption, low condition requirements, and expansion of the scope of application and material selection.

Active Publication Date: 2016-12-14
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a method for glue chain quantum dot film and quantum dot film, aiming to solve the problem that the quantum dot glue chain method in the prior art affects the performance of quantum dots and has many by-products

Method used

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  • Method for gluing quantum dot film and quantum dot films
  • Method for gluing quantum dot film and quantum dot films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] A 10mg / ml quantum dot solution QD1 was prepared and spin-coated on a glass substrate in a nitrogen atmosphere. The spin-coating condition is 6000rpm, 60s, and a quantum dot film of about 10nm is formed. Transport the quantum dot film into the HHIC vacuum plasma generation chamber, and pump it to 1.5*10 -3 Under the working pressure of Torr, hydrogen gas of 20SCCM is introduced, the electron acceleration voltage is -100V, and the hysteresis voltage is +100V to -50V, and the sample is taken out after 40s of reaction. Once the sample is glued, it cannot be wiped off with the same solvent.

Embodiment 2

[0040]Prepare 30mg / ml quantum dot solution QD2, and use the same solvent as solution QD1. Spin-coat on the sample of QD1 above in a nitrogen atmosphere. The spin coating condition is 3000rpm for 60s to form a quantum dot film. Transport the quantum dot film into the HHIC vacuum plasma generation chamber, and pump it to 1.5*10 -2 Under the working pressure of Torr, hydrogen gas of 20SCCM is introduced, the electron acceleration voltage is -100V, and the hysteresis voltage is +100V to -50V, and the sample is taken out after 160s of reaction. The total thickness of the sample is 50nm. Cannot be cleaned with the same solvents.

Embodiment 3

[0042] Prepare quantum dot solutions: 40mg / ml quantum dot solution QD1 and 60mg / ml quantum dot solution QD2. Spin-coat on glass substrates under nitrogen atmosphere. The spin-coating condition is 2000rpm, 60s, and a 120nm quantum dot film is formed. Transport the quantum dot film into the HHIC vacuum plasma generation chamber, and pump it to 1.5*10 -1 Under the working pressure of Torr, 55 SCCM of hydrogen gas is introduced, the electron acceleration voltage is -100V, and the hysteresis voltage is from +100V to -50V, the sample is taken out after 400s of reaction. After the sample is glued, it cannot be cleaned by the same solvent.

[0043] In summary, the method and quantum dot film of a kind of adhesive chain quantum dot film provided by the present invention, the present invention adopts HHIC adhesive chain quantum dot film, and improves its technology, makes quantum dot film have better solvent resistance and The effect of mechanical force. The method for the HHIC adhe...

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Abstract

The invention discloses a method for gluing quantum dot films and the quantum dot films. The method comprises the steps of preparing one or more layers of quantum dot films from colloidal quantum dots, volatilizing solvents in the quantum dot films after the films are formed, and forming the quantum dot films which only contain the quantum dots; putting the quantum dot films into a vacuum plasma generation cavity; and introducing H2 into the vacuum plasma generation cavity, then transforming the H2 into H plasma and gluing the quantum dot films through the H plasma. The quantum dot films are glued by use of HHIC and the process is improved, so that the quantum dot films have better effects of solvent resistance and mechanical force. The method for gluing the quantum dot films by HHIC is short in elapsed time, low in condition requirements and free of a special requirement on a reactant; and no new material is generated. Furthermore, the films glued by HHIC are better than traditional films which are glued in a heating manner in stability, and the electrical properties of the films are not changed. The application range and the material selection range of a solution method can be expanded by HHIC.

Description

technical field [0001] The invention relates to the field of quantum dots, in particular to a method for an adhesive chain quantum dot film and the quantum dot film. Background technique [0002] Colloid (Colloid) quantum dots are nanomaterial systems based on liquid phase distribution. Colloidal quantum dots are prepared by different preparation processes (spin coating, printing, transfer printing, coating, etc.) to prepare quantum dot multilayer or single layer films. Because in the colloidal quantum dot system, the quantum dots are dispersed in the solvent, the solvent volatilizes after the film is formed, and a solid film with only quantum dots stacked is formed. The quantum dots are connected by weak van der Waals force, and the film shape cannot be maintained under external effects (mechanical force, solvent, etc.). Therefore, the application of colloidal quantum dots is greatly limited. For example, in the preparation process of QLEDs, because the quantum dots cann...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56
CPCH10K71/13H10K71/12
Inventor 向超宇曾世荣
Owner TCL CORPORATION
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