16results about "Lead sulfides" patented technology

The present invention relates to the technical field of thermal imaging of mid-infrared focal plane detectors, and more particularly relates to a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots. The mid-infrared focal plane detector is prepared on a readout integrated circuit (ROIC) substrate, and is composed of an Au bottom electrode, a PbS hole transport layer, a Sn-doped PbSe photosensitive layer, and a PIN heterojunction of a ZnO electron transport layer sequentially constructed by an ion beam sputtering method, a spin-coating method, a spin-coating method, and an ion beam sputtering method, respectively, and an indium tin oxide (ITO) top electrode finally evaporated by an ion beam sputtering method.

The application provides a method for preparing lead sulfide from a complex lead sulfide ore, and belongs to the technical field of lead sulfide preparation. The complex lead sulfide ore is subjected to vacuum distillation to obtain crude lead sulfide; the temperature of the vacuum distillation is 700-1200 DEG C, the time is 30-120 min, and the vacuum degree is 1-10 Pa; the crude lead sulfide is mixed with an alkaline solution to perform alkaline leaching, solid-liquid separation, and then lead sulfide pure product is obtained. In the application, the temperature and heating time are controlled under vacuum conditions, the structure of the solid solution in the original mineral is broken, the lead sulfide is volatilized alone, preliminary separation is realized, and then the lead sulfide with high purity is obtained through the wet leaching method. The examples show that the purity of the lead sulfide obtained through the vacuum distillation-alkaline solution leaching method is 90-98%, the Sb content is 0.5-3%, the lead sulfide has high purity, and the lead sulfide is directly obtained from the complex lead sulfide ore.

The application discloses a preparation method of PbS nanometer cubic quantum dots, which comprises the following steps of lead precursor preparation, nucleation, continuous injection growth and reaction termination. The method realizes the preparation of highly uniform cubic PbS quantum dots in a one-step synthesis process by fine adjustment of a lead-sulfur ratio, temperature and injection speed. The prepared PbS nanometer cubic quantum dots have clean crystal faces, are suitable for theoretical and experimental research and characterization of ligand strength, and can in-situ control the size of nanometer cubic quantum dots compared with the prior art, so that the problem that the size is not adjustable in the prior art is solved. Meanwhile, the preparation method can obtain the PbS nanometer cubic quantum dots with adjustable size and small size, provides new material selection for application in the fields of photoelectric devices and the like, and lays a foundation for further research on the characteristics and performance of the PbS quantum dots.

The invention relates to the technical field of colloidal quantum dot doping, in particular to an iodine-doped preparation method of PbS colloidal quantum dots, which comprises the following steps: preparing PbS CQDs by a thermal injection method, dispersing the PbS CQDs in an n-octane solution for later use after liquid phase exchange, weighing a certain amount of iodine (I) solid, adding a proper amount of ethanol solvent, treating under ultrasonic conditions until the iodine (I) solid is completely dissolved, and drying to obtain the PbS colloidal quantum dots. The iodine-doped PbS (I) CQDs thin film is prepared by the following steps: adding a PbS CQDs solution into a quartz substrate to obtain a uniform iodine solution, dripping the PbS CQDs solution on the quartz substrate, spin-coating to form a PbS CQDs thin film, immersing the obtained thin film into the iodine solution for 30 seconds, taking out the thin film, spin-drying the thin film on a spin coater, cleaning the surface with an ethanol solution, and repeating the operation twice to finally obtain the iodine-doped PbS (I) CQDs thin film. The doping technology is simple and effective, the doping concentration is adjustable, large-scale solution phase doping can be achieved, and the doping technology is expected to be applied to PbS quantum dot material and film doping and plays an important role in PbS quantum dot photoelectric devices and electronic devices.

This application discloses a lead sulfide-based material and its preparation method, as well as a thermoelectric device, belonging to the field of lead sulfide-based material preparation. The preparation method includes the following steps: placing the raw material in a temperature field for heat treatment to obtain the lead sulfide-based material; the temperature field includes a first temperature zone, a second temperature zone, and a third temperature zone sequentially arranged along a first direction; the heat treatment sequentially includes a heating stage, a first isothermal stage, a first cooling stage, a second isothermal stage, a second cooling stage, a third isothermal stage, and a cooling stage. This application mainly reduces the thermal conductivity of the lead sulfide-based material by placing the raw material in a specific temperature field for gradient heat treatment, while significantly improving its various thermoelectric performance parameters, meeting the requirements for thermoelectric devices and showing broad application prospects.

The invention provides a lead sulfide quantum dot and a preparation method thereof, and the preparation method comprises the following steps: carrying out ion exchange on a perovskite quantum dot and a sulfur source in a liquid-phase medium to obtain the lead sulfide quantum dot. According to the invention, the perovskite quantum dots are used as a template, and the perovskite quantum dots and a sulfur source are subjected to ion exchange by using the ion characteristics of the perovskite quantum dots, so that the perovskite quantum dots are converted into lead sulfide quantum dots; therefore, the lead sulfide quantum dots with different wavelengths can be obtained by regulating and controlling the particle size and the shape of the perovskite quantum dots. According to the preparation method of the lead sulfide quantum dot, the lead sulfide quantum dot with the high peak-to-valley ratio and the good monodispersity can be prepared under the room temperature condition, the preparation process is simple, the raw material source is wide, the raw material cost is low, the preparation condition requirement is low, environment friendliness is high, and the preparation method is suitable for large-scale production.

The application relates to a lead sulfide quantum dot preparation method, which specifically comprises the following steps: rapidly injecting a ZnS quantum dot solution into a mixed solution of lead chloride and oleylamine to make the solution nucleate; after maintaining for a certain time, rapidly injecting an amine solution of zinc dithiocarbamate; and controlling the size of the synthesized PbS quantum dots by controlling the temperature and the concentration of the sulfur source. The application provides a single precursor zinc dithiocarbamate to replace the ZnS quantum dots as the growth sulfur source, so that the time is saved, and the complex steps of synthesizing the ZnS quantum dots are omitted.

A method, comprising: disposing a plurality of layers on a plurality of nanocrystals (NCs) disposed on a substrate, wherein a given layer comprises a matrix material that includes a compound comprising an anionic species associated with a cationic species, the plurality of NCs optionally being core-shell NCs or quantum dots, and wherein the method is performed so as to give rise to interparticle fusion between at least some of the plurality of NCs and to completely fill interstitial gaps between NCs. Also provided is a composition, comprising: a plurality of NCs exhibiting interparticle fusion therebetween and the plurality of NCs defining interstitial spaces therebetween, the interstitial spaces being completely filled with a matrix material that comprises a plurality of layers, a given layer including an anionic species associated with a cationic species, and the plurality of NCs optionally being core-shell NCs or quantum dots.

The application relates to a lead sulfide quantum dot preparation method, which specifically comprises the following steps: rapidly injecting an amine solution of activated zinc dithiocarbamate into a mixed solution of lead chloride and oleylamine to make it nucleate and grow, and adjusting the size of the synthesized PbS quantum dots by adjusting temperature and growth time, etc. A single precursor zinc dithiocarbamate completely replaces ZnS quantum dots as a nucleation and growth sulfur source, does not need to be added dropwise, saves time, omits the complex steps of synthesizing ZnS quantum dots, and can be stably kept at a certain size for a long time without ripening.

The application discloses a method for preparing Ba x Pb 1‑x S alloy by using a molecular precursor route, which comprises the following steps: firstly, synthesizing barium dibutyl dithiocarbamate and lead dibutyl dithiocarbamate solids; dispersing the two kinds of solids by using carbon disulfide to obtain a mixed solution; and reacting and alloying under the condition of nitrogen to obtain Ba x Pb 1‑x S alloy powder; or dropping and coating the mixed solution on a quartz glass and reacting and alloying to obtain a Ba x Pb 1‑x S alloy thin film. The Ba 0.5 Pb 0.5 S alloy prepared by the method has a band gap width of 1.77 eV and can maintain good stability under high humidity conditions. The photoelectric detector constructed by the Ba 0.5 Pb 0.5 S alloy has an extremely low dark current and excellent photoelectric response capacity, and the band gap of the Ba x Pb 1‑x S alloy can be adjusted by adjusting the molar ratio of Ba and Pb in the Ba-Pb-S alloy.

The invention discloses a preparation method of a chlorine-doped PbS colloidal quantum dot film, and relates to the technical field of PbS colloidal quantum dot film doping, in particular to a Cl-doped colloidal quantum dot. The chlorine-doped PbS colloidal quantum dot film is formed by doping 1 * 10 <-3 > M Cl in PbS colloidal quantum dots. The preparation method comprises the steps of preparation of PbS colloidal quantum dot powder, preparation of a PbS colloidal quantum dot film, preparation of an HCl / ethanol solution and doping. According to the solution method doping, expensive equipment of doping technologies such as ion implantation and thermal diffusion does not need to be used, the experiment cost is greatly reduced, and commercialized application becomes possible.

The invention discloses a lead sulfide quantum dot and a preparation method thereof.The preparation method of the lead sulfide quantum dot comprises the following steps that lead oxide, oleic acid and octadecene are adopted for preparing a lead precursor solution; preparing a sulfur precursor solution from hexamethyldisilazane and octadecene; a lead precursor solution, a sulfur precursor solution and octadecene react through a microfluidic device to prepare the lead sulfide quantum dots. According to the preparation method disclosed by the invention, the micro-fluidic chip is innovatively utilized, and the flow velocity of the precursor solution is adjusted through the injection pump, so that accurate control on the reaction time is realized; the concentration of the precursor solution is accurately regulated and controlled to ensure that the reaction is fully carried out; meanwhile, the heating unit is used for carrying out constant-temperature heating control on the micro-fluidic chip to ensure the stability of the reaction temperature, so that the preparation of the lead sulfide quantum dots is accurately controlled in real time, and the prepared lead sulfide quantum dots are uniform in size distribution, high in quantum efficiency and repeatable.

The present invention relates to a method for the preparation of mixed rare earth metal carbonates from monazite, this method comprising a first leaching with an alkaline hydroxide and a two-step second leaching in the presence of hydrochloric acid.

The invention relates to monodisperse lead sulfide quantum dots with an adjustable size wide range and a preparation method thereof, and belongs to the technical field of semiconductor quantum dots, the preparation method comprises the following steps: mixing a sulfur source, 1-octadecene and a ligand solvent to prepare a sulfur precursor solution; mixing oleic acid, lead oxide and 1-octadecene, and carrying out heating reaction in an inert atmosphere to prepare a lead oleate solution; injecting the sulfur precursor solution into the lead oleate solution, and performing heating reaction to prepare a lead sulfide quantum dot mixed solution; and purifying the lead sulfide quantum dot mixed solution to obtain the lead sulfide quantum dots. The lead sulfide quantum dot provided by the invention has good crystallinity and monodispersity, the size distribution is 4-10nm, and controllable preparation of the lead sulfide quantum dot at an exciton peak position (1,400-2,200 nm) in a short-wave infrared range is realized; the particle size distribution is uniform, and the prepared lead sulfide quantum dot material can be applied to the fields of near-infrared (short-wave infrared) photoelectric detectors, solar cells and the like.

The invention discloses a method for synthesizing a high-quality short-wave infrared PbS quantum dot with an adjustable wide size range, and the method can effectively control the synthesis reaction activity by adjusting the mixing ratio of thiourea T1 and thiourea T2, so that the size of the PbS quantum dot is continuously adjustable in a range of 2.3-7.2 nm, and the absorption peak wavelength of the PbS quantum dot can be continuously regulated and controlled in a range of 800-1800 nm. According to the method, a traditional complex process in which various single thioureas need to be used for wide size range regulation and control is abandoned, the use variety of the thioureas is remarkably reduced, and the simplicity and controllability of the preparation process are improved while the size control difficulty and the production cost of the PbS quantum dots are reduced.

The invention discloses a method for preparing PbS quantum dots by using a mixed sulfur source, and relates to the technical field of colloidal quantum dot material preparation, in particular to a method for preparing high-quality PbS colloidal quantum dots by using the mixed sulfur source. According to the method for preparing the high-quality PbS colloidal quantum dots by adopting the mixed sulfur source, through combination of high-reaction-activity (TMS) S and low-reaction-activity ZnS colloidal quantum dots, accurate regulation and control of nucleation and growth processes are realized, so that the PbS colloidal quantum dots with high monodispersity (shown as a high peak-to-valley ratio and a narrow full width at half maximum) are obtained. According to the method, the injection frequency of the sulfur source is reduced to two times, so that the consumption of TMS S is remarkably reduced, the environmental pollution is reduced, and the production cost is effectively reduced.