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Emitter electrode structure capable of improving crystal silicon solar battery shortwave response

A technology of crystalline silicon solar cells and emitters, which can be used in circuits, photovoltaic power generation, electrical components, etc., and can solve problems such as heavy doping of emitters

Active Publication Date: 2008-12-17
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to overcome the limitation of the photocurrent caused by the short-wave response difference caused by the heavy doping of the emitter of the existing traditional solar cell and the large junction depth, and to provide an improvement that is easier to achieve than the selective emitter technology. The Emitter Structure of the Shortwave Response of the Battery

Method used

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  • Emitter electrode structure capable of improving crystal silicon solar battery shortwave response
  • Emitter electrode structure capable of improving crystal silicon solar battery shortwave response
  • Emitter electrode structure capable of improving crystal silicon solar battery shortwave response

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Embodiment 1

[0019] The emitter structure in this embodiment is as figure 2 As shown, the crystalline silicon substrate 1 is a p-type monocrystalline silicon substrate with a textured surface. On the crystalline silicon substrate 1 is a crystalline silicon layer 2, the crystalline silicon layer 2 is an n-type single crystal silicon layer prepared by diffusion, and the surface doping concentration is 1.0×10 19 / cm 3 , Sheet resistance 200Ω·cm. On the crystalline silicon layer 2 is a transparent conductive electrode layer 3, and the transparent conductive electrode layer 3 is an 80nm thick ITO layer prepared by magnetron sputtering. On the transparent conductive electrode layer 3 are metal grid lines 4, and the metal grid lines 4 are Ag grid lines prepared by thermal evaporation.

Embodiment 2

[0021] The emitter structure in this embodiment is as image 3 As shown, the crystalline silicon substrate 1 is an n-type polycrystalline silicon substrate with a flat surface. On the crystalline silicon substrate 1 is a crystalline silicon layer 2, the crystalline silicon layer 2 is a p-type crystalline silicon layer grown epitaxially, and the doping concentration is 1.0×10 20 / cm 3 , Sheet resistance 300Ω·cm. On the crystalline silicon layer 2 is an intrinsic amorphous silicon layer 5, which is prepared by PECVD with a thickness of 1 nm. On the intrinsic amorphous silicon layer 5 is a transparent conductive electrode layer 3, which is an 80nm thick ZnO·Al layer prepared by thermal evaporation. On the transparent conductive electrode layer 3 is a metal grid line 4, and the metal grid line 4 is an Al grid line prepared by magnetron sputtering.

Embodiment 3

[0023] The emitter structure in this embodiment is as Figure 4 As shown, the crystalline silicon substrate 1 is a p-type polycrystalline silicon substrate with a textured surface. On the crystalline silicon substrate 1 is a crystalline silicon layer 2, the crystalline silicon layer 2 is an n-type crystalline silicon layer prepared by diffusion, and the doping concentration is 1.0×10 20 / cm 3 , Sheet resistance 500Ω·cm. On the crystalline silicon layer 2 is an intrinsic amorphous silicon layer 5 prepared by HWCVD with a thickness of 10 nm. The transparent conductive electrode layer 3 is on the intrinsic amorphous silicon layer 5, and the transparent conductive electrode layer 3 is an 80nm thick ZnO·Al layer prepared by electron beam evaporation. On the transparent conductive electrode layer 3 is a metal grid line 4, and the metal grid line 4 is an AgAl alloy grid line prepared by electron beam evaporation.

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Abstract

An emitter structure for improving shortwave response of crystalline silicon solar cells sequentially comprises a doped crystalline silicon substrate (1); a crystalline silicon layer (2), which is prepared on the crystalline silicon substrate (1) and has an opposite dopant type to the dopant of the crystalline silicon substrate (1); a transparent conducting electrode layer (3) prepared on the crystalline silicon layer (2); and a metal grid line (4) prepared on the transparent conducting electrode layer (3).

Description

technical field [0001] The invention relates to an emitter structure for improving the short-wave response of a crystalline silicon solar cell. Background technique [0002] The research and utilization of silicon solar cells is one of the main ways to realize renewable energy, and crystalline silicon cells account for more than 90% of the total photovoltaic market share. Although the theoretical conversion efficiency of silicon solar cells is close to 30%, and the highest efficiency obtained in the laboratory has reached 24.5%, the conversion efficiency of crystalline silicon cells on the market is only about 16%. The reason for this low efficiency is that the square resistance of the emitter prepared by diffusion of industrial solar cells is about 40Ω·cm. Such an emitter has a larger junction depth and a higher doping concentration in order to obtain a good ohmic contact and prevent burn-through during the subsequent sintering of the metal grid lines. Despite this benefi...

Claims

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Application Information

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IPC IPC(8): H01L31/06H01L31/068
CPCY02E10/546
Inventor 赵雷王文静
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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