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Technology for preparing emitting electrode without dead layer by adopting alkaline method and texturization

A preparation process and emitter technology, applied in the field of preparation process of non-dead layer emitter after alkali method, can solve the problems affecting battery efficiency, etc., achieve the effect of improving short-wave response, easy industrial production, and reducing dark current

Inactive Publication Date: 2012-08-01
山东力诺太阳能电力股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the traditional preparation of the emitter, the doping concentration on the surface of the silicon wafer is higher than 10 20 / cm 3 , so a dead zone of tens of nanometers will be formed on the surface, which will affect the efficiency of the battery

Method used

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  • Technology for preparing emitting electrode without dead layer by adopting alkaline method and texturization
  • Technology for preparing emitting electrode without dead layer by adopting alkaline method and texturization

Examples

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Effect test

Embodiment １

[0028] Put the P-type monocrystalline silicon wafer 5 into a NaOH solution with a temperature of 80°C and a concentration of 180g / L, soak for 20s, and remove the damaged layer on the surface of the silicon wafer 5; then put the silicon wafer 5 into a conventional diffusion furnace, Perform traditional diffusion with a diffusion time of 6 hours to prepare an emitter with a square resistance of 8 ohm / sq; use HF acid solution with a concentration of 10% to remove the silicon glass 2 containing doping sources on the surface of the silicon wafer; Put the silicon wafer 5 of the silicon glass 2 with a concentration of 5g / L and a mixed solution of IPA with a concentration of 150g / L to complete the surface texture for 1000s, and remove the dead layer emitter 3 at the same time. The square resistance of the surface of the silicon wafer 5 without the dead layer emitter 4 is 78 ohm / sq; then put it into a mixed solution of 5% HCl and 7% HF acid for cleaning for 5 minutes. Then the silicon ...

Embodiment 2

[0030] Put the P-type monocrystalline silicon wafer 5 into the NaOH solution with a temperature of 80°C and a concentration of 180g / L, soak for 20s, and remove the damaged layer on the surface of the silicon wafer 5; then put the silicon wafer 5 into a conventional diffusion furnace , carry out traditional diffusion, the diffusion time is 5.5h, and prepare an emitter with a square resistance of 10ohm / sq; use a HF acid solution with a concentration of 10% to remove the silicon glass 2 containing the dopant source on the surface of the silicon wafer; the removed Put the silicon wafer 5 of silicon glass 2 containing the dopant source into a mixed solution of NaOH with a concentration of 5g / L and IPA with a concentration of 150g / L to complete the surface texture for 940s, and remove the dead layer emitter 3 at the same time At this time, the square resistance of the surface of the silicon wafer 5 without the dead layer emitter 4 is 83 ohm / sq; then put it into a mixed solution of 5%...

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Abstract

The invention belongs to the technical field of manufacturing of crystal silicon solar cells, and in particular relates to a technology for preparing an emitting electrode without a dead layer by adopting an alkaline method and texturization. The emitting electrode without the dead layer and excellent performance is prepared by adopting a diffusion and texturization method; and by the technology, a dead layer emitting electrode region on the surface of a cell sheet can be effectively removed, the short wave response of the solar cell is improved, dark current is reduced, the open-circuit voltage of the cell sheet is effectively improved, and industrialized production is facilitated.

Description

technical field [0001] The invention belongs to the technical field of manufacturing crystalline silicon solar cells, and in particular relates to a method for preparing an emitter electrode without dead layers after alkali method texturing. Background technique [0002] With the depletion of fossil energy, solar cells, as a kind of green energy, have been rapidly developed. Crystalline silicon solar cells have become the mainstream in the field of solar cells. How to reduce the cost of solar cells and improve the efficiency of solar cells has become the focus of research on crystalline silicon solar cells at home and abroad. [0003] The emitter is a key component of the solar cell, and its surface doping concentration directly affects the efficiency of the solar cell. Because when the doping concentration is greater than 10 20 / cm 3 Therefore, by reducing the doping concentration of the emitter surface, improving the response of the battery sheet to the short-wave band,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 程亮张黎明刘鹏姜言森贾河顺任现坤姚增辉张春艳
Owner 山东力诺太阳能电力股份有限公司
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