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Cadmium telluride solar cell with Te-Ti-Cu pre-set layer

A te-ti-cu, solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as affecting the long-term stability of batteries

Inactive Publication Date: 2014-10-29
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the back contact layer is often made of copper or copper-containing materials, such as copper, ZnTe:Cu, HgTe:Cu, Cu x Te, etc., but the copper in the back contact layer is easy to diffuse. If it only diffuses to cadmium telluride to form acceptor doping, it will help improve battery performance; if the copper concentration is too high or the diffusion speed is fast, it will reach the main junction or front electrode. affect the long-term stability of the battery

Method used

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  • Cadmium telluride solar cell with Te-Ti-Cu pre-set layer
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  • Cadmium telluride solar cell with Te-Ti-Cu pre-set layer

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Experimental program
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Effect test

Embodiment 1

[0019] Evaporation method: (1) Preparation of Te-Ti-Cu pre-layer

[0020]Put the sample into the vacuum chamber, evacuate, the temperature of the sample is at room temperature, and use the electron beam evaporation method to sequentially deposit tellurium (T1), titanium (T2) and copper (T3), wherein the purity of the raw material tellurium is 99.99% and above, titanium The purity of copper is 99.99% and above, and the purity of copper is 99.99% and above. The thickness of deposited tellurium (T1) is 1~10 nm, the thickness ratio of tellurium (T1) to titanium (T2) is 3.1, and the ratio of copper (T3) to tellurium (T1) thickness is 0.05, so that a period of Te-Ti- The Cu preset layer (B) was continuously deposited for 20 cycles to obtain a Te-Ti-Cu preset layer (B) with a total thickness of 250 nm. After the last cycle of the Te-Ti-Cu preset layer (B), the Deposit titanium with a thickness of about 500nm as the back electrode;

[0021] (2) Post-processing Te-Ti-Cu preset lay...

Embodiment 2

[0024] Sputtering method: (1) Preparation of Te-Ti-Cu pre-layer

[0025] Fix the tellurium target (purity 99.99% and above), titanium target (purity 99.99% and above) and copper target (purity 99.99% and above) respectively on the three target positions corresponding to the sputtering device, and fix the sample on the substrate In terms of position, adjust the distance between the target and the substrate by 6-9 cm; put the sample into the vacuum chamber, evacuate, the sample temperature is at room temperature, and deposit tellurium (T1), titanium (T2) and copper ( T3), where the background vacuum ~10 -4 Pa, the working gas is argon, the working pressure is 0.1~3.5 Pa, the sputtering power of the tellurium target is 30~100 W, the sputtering power of the molybdenum target is 30~300 W, the sputtering power of the copper target is 30~100 W, and the deposition of tellurium (T1) The thickness is 1~10 nm, the thickness ratio of tellurium (T1) and titanium (T2) is 3.1, and the ...

Embodiment 3

[0029] Pulse laser deposition method: KrF excimer laser as excitation source, repetition frequency 1Hz, distance between target and substrate S 4 cm, laser pulse energy density 1~3J / cm 2 , the background air pressure of the growth chamber is 10 -4 Pa, laser irradiates a Te target (99.999%) to grow a Te (T1) film, then laser irradiates a Ti target (99.999%) to grow a Ti (T2) film, and then ablates a copper target (99.999%) to deposit a Cu (T3) film, where The thickness of tellurium (T1) is 1~10 nm, the thickness ratio of tellurium (T1) to titanium (T2) is 3, and the ratio of copper (T3) to tellurium (T1) thickness is 0.05, thus completing a cycle of Te-Ti- Preparation of Cu pre-layer (B). Repeat the above steps more than 20 times to obtain a Te-Ti-Cu preset layer (B) with a total thickness of more than 200 nm. After the last cycle of the Te-Ti-Cu preset layer (B), deposit titanium ( T2) with a thickness of about 500 nm is used as the back electrode; the post-treatment of the...

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Abstract

A cadmium telluride solar cell with a Te-Ti-Cu pre-set layer utilizes the pre-set Te-Ti-Cu layer of a periodic structure, and the pre-set Te-Ti-Cu layer is arranged on the back surface of an absorption layer of the cadmium telluride solar cell to be used as a back contact layer and a back electrode material of the cadmium telluride solar cell. The cadmium telluride solar cell with the Te-Ti-Cu pre-set layer can restrain copper diffusion on the material configuration and material property, eliminate the negative impact brought by copper diffusion, realize ohmic contact, avoid chemical corrosion and alone deposition of other metals as electrodes, reduce device production processes, enhance the photoelectric conversion efficiency of the solar cell and improve the long-term stability of devices.

Description

technical field [0001] The invention belongs to the field of semiconductor materials and devices. Background technique [0002] Cadmium telluride is an important photoelectric conversion material. As a p-type semiconductor, it can form a CdS / CdTe heterojunction solar cell with wide energy gap n-type cadmium sulfide, and its theoretical photoelectric conversion efficiency is as high as 30%. At present, the photoelectric conversion efficiency of small-area solar cells in the laboratory has exceeded 20%, and the conversion efficiency of commercial modules exceeds 11%. Generally, the basic structure of a cadmium telluride solar cell is: glass / transparent conductive film / cadmium sulfide / cadmium telluride / metal electrode, in which the transparent conductive film (TCO) is the front electrode, cadmium sulfide is the window layer, and cadmium telluride is the absorber layer. In the preparation process of cadmium telluride solar cells, realizing the low-resistance contact between th...

Claims

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Application Information

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IPC IPC(8): H01L31/0256H01L31/04
CPCY02E10/50H01L31/022441
Inventor 李卫文灿张静全冯良桓武莉莉黎兵王文武曾广根高静静王州玲唐楠
Owner SICHUAN UNIV
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