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A light-emitting diode epitaxial wafer, chip and preparation method thereof

A technology of light-emitting diodes and epitaxial wafers, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as current congestion, excessive current, and reduced light-emitting efficiency of light-emitting diodes, and achieve the effect of improving series resistance and improving light efficiency.

Active Publication Date: 2020-12-01
HC SEMITEK ZHEJIANG CO LTD
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  • Abstract
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Problems solved by technology

[0007] The embodiment of the present invention provides a light-emitting diode epitaxial wafer, chip and its preparation method, which can solve the problems of the prior art that the heavy doping of the contact layer will introduce too many defect states, which will cause current congestion and reduce the light extraction efficiency of the light-emitting diode.

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  • A light-emitting diode epitaxial wafer, chip and preparation method thereof
  • A light-emitting diode epitaxial wafer, chip and preparation method thereof
  • A light-emitting diode epitaxial wafer, chip and preparation method thereof

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Embodiment Construction

[0033] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0034] An embodiment of the present invention provides a light emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a light emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the light emitting diode epitaxial wafer includes a substrate 10, an N-type semiconductor layer 20, an active layer 30, a P-type semiconductor layer 40 and a contact layer 50, an N-type semiconductor layer 20, an active layer 30, a P-type semiconductor layer 40 and a contact Layers 50 are sequentially stacked on substrate 10 .

[0035] In this embodiment, the material of the contact layer 50 is antimonene.

[0036] In the embodiment of the present invention, antimonene is used to form the cont...

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Abstract

The invention discloses an LED epitaxial wafer and a manufacturing method thereof, and a LED epitaxial chip and a manufacturing method thereof, and belongs to the technical field of semiconductors. The LED epitaxial wafer comprises a substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer and a contact layer, and the active layer, the P-type semiconductor layer andthe contact layer are sequentially laminated on the substrate; and the material of the contact layer is antimonene. The contact layer is made of antimonene, the defect state in the antimonene is few,the mobility of a carrier in the antimonene layer is high to facilitate achievement of the ohmic contact between the P-type semiconductor layer and the electrode without current congestion to improvethe series resistance of the LED and absorb little light emitted by the active layer so as to improve the efficacy of the whole LED as a whole.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer, a chip and a preparation method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate. The substrate is us...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/40H01L33/00
Inventor 郭炳磊王群葛永晖吕蒙普胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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