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Phosphorus gettering technology for silicon chips

A diffusion process and phosphorus gettering technology, applied in the field of phosphorus doping diffusion process, can solve problems such as affecting the photoelectric conversion efficiency of solar cells, and achieve the effect of improving short-wave response, improving short-circuit current and open-circuit voltage, and reducing "dead layer".

Inactive Publication Date: 2015-12-23
JIANGXI UNIEX NEW ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the base material for making solar cells, there are micro-defects and metal impurities in silicon wafers. These defects and impurities introduce multiple deep energy levels in the forbidden band of silicon and become recombination centers for minority carriers, seriously affecting the photoelectricity of solar cells. conversion efficiency

Method used

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  • Phosphorus gettering technology for silicon chips

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Effect test

Embodiment 1

[0030] A silicon chip phosphorus gettering and diffusion process, the specific steps are:

[0031] (1) Start: the time is 10s, the temperature is set to 770~790°C, the flow rate of large nitrogen is 9L / min, and the flow rate of small nitrogen and oxygen is 0L / min;

[0032] (2) Entering the boat: the time is 650s, the temperature is set at 770~790°C, the flow rate of large nitrogen is 9L / min, the flow rate of small nitrogen and oxygen is 0L / min, and the speed of entering the boat is 400mm / min;

[0033] (3) Heating: the time is 500s, the temperature is set to 770~790°C, the flow rate of large nitrogen is 18L / min, and the flow rate of small nitrogen and oxygen is 0L / min;

[0034] (4) Pre-oxidation: the time is 400s, the temperature is set at 770~790°C, the maximum nitrogen flow rate is 16L / min, the small nitrogen flow rate is 0L / min, and the oxygen flow rate is 2L / min;

[0035] (5) The first deposition: the time is 800s, the temperature is set to 770~790°C, the maximum nitrogen ...

Embodiment 2

[0046] A silicon chip phosphorus gettering and diffusion process, the specific steps are:

[0047](1) Start: the time is 5s, the temperature is set to 770~790°C, the flow rate of large nitrogen is 9L / min, and the flow rate of small nitrogen and oxygen is 0L / min;

[0048] (2) Entering the boat: the time is 650s, the temperature is set at 770~790°C, the flow rate of large nitrogen is 9L / min, the flow rate of small nitrogen and oxygen is 0L / min, and the speed of entering the boat is 400mm / min;

[0049] (3) Heating: the time is 500s, the temperature is set to 770~790°C, the flow rate of large nitrogen is 15L / min, and the flow rate of small nitrogen and oxygen is 0L / min;

[0050] (4) Pre-oxidation: the time is 200s, the temperature is set at 770~790°C, the maximum nitrogen flow rate is 14L / min, the small nitrogen flow rate is 0L / min, and the oxygen flow rate is 1L / min;

[0051] (5) The first deposition: the time is 700s, the temperature is set to 770~790°C, the maximum nitrogen fl...

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Abstract

The invention relates to a phosphorus gettering technology for silicon chips, belonging to the technical field of photovoltaic. The phosphorus gettering technology for silicon chips comprises the steps: putting silicon chips through cleaning and texturing in a diffusion furnace, letting nitrogen, oxygen and phosphorous oxychloride into the diffusion furnace, and diffusing under the high temperature; performing three times of deposition for the diffusion, performing propulsion of a certain time after every time of deposition, and then cooling the chips to the normal temperature, wherein the average transition efficiency of a cell is improved by 0.2% after completing the processes, such as etching, PECVD and silk screen sintering according to the normal processes of the cell.

Description

technical field [0001] The invention relates to a phosphorus gettering and diffusion process for silicon wafers, in particular to a phosphorus doping and diffusion process in the manufacture of solar cells, and belongs to the field of photovoltaic technology. Background technique [0002] With the development of modern industrialization, non-renewable energy sources are decreasing day by day, and energy issues have increasingly become a bottleneck restricting the development of the international society and economy. Many countries have begun to implement the "Sunshine Plan" to develop solar energy resources and provide new development momentum for economic development. Driven by the huge potential of the international photovoltaic market, solar cell manufacturers from all over the world not only invested huge sums of money to expand production, but also established research and development institutions to develop new solar cell projects and improve product quality and convers...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L21/223
CPCH01L21/223H01L31/18Y02P70/50
Inventor 曹江伟杨晓琴张广路蒋洋洋
Owner JIANGXI UNIEX NEW ENERGY CO LTD
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