30results about How to "Resolve uneven diffusion" patented technology

The invention discloses a low-pressure variable-temperature diffusion method of a nanometer textured polycrystalline silicon solar cell, and relates to the technical field of solar cells. The low-pressure variable-temperature diffusion method comprises the steps of cleaning of silicon wafers, vacuumizing, temperature rising, power on, cooling and wafer discharging. The pressure of diffusion gas keeps 0.001-0.8 Pa, the diffusion temperature range is from 600 to 950 degrees, the silicon wafers used are p-type silicon wafers and n type silicon wafers. Low-pressure diffusion and variable-temperature diffusion are combined, the problem of uneven diffusion of the nanometer textured silicon wafers is resolved, molecular movement of a diffusion source is accelerated under a low-pressure condition, an impurity source in a diffusion cavity is distributed evenly, the partial concentration difference on the surfaces of the silicon wafers is small, and an even diffusion environment is created. Meanwhile, inside a nanometer textured structure, the diffusion length of a gas source is large, the response time is short, and it is represented that similar diffusion source atmosphere exists within a certain period of time.

The invention discloses a TFT substrate. The TFT substrate comprises a substrate layer, a thin-film transistor, a color resistance layer, a via hole and a pixel electrode; the via hole penetrates thecolor resistance layer so that the pixel electrode and the thin-film transistor are conducted; the color resistance layer is characterized in that a bulge is formed thereon, the bulge is arranged at one side of the via hole; when coating PI solution (polyimide solution) on the color resistance layer, the bulge can obstruct the surface tension of the PI solution, so that the PI solution can flatlyflow in and fill the via hole. The TFT substrate disclosed by the invention has the advantages that a bulge structure is arranged beside the via hole so as to guide the PI solution to flow in the viahole, the condition that the PI solution is stacked around the via hole due to the problem of the own surface tension, and then the PI mura problem is effectively avoided.

This invention discloses a diffusion furnace of semiconductor silicon plate liquid source including: a diffusion tube and quartz tubes for spraying the source, in which, the diffusion furnace tube is in a structure of two ends open, 2-10 source-spraying quartz tubes are installed on the internal wall of the tube with the diameter of pha2-pha 10mm, capillary holes in uniform aperture are distributed on the wall of the tube and the exit end of the tube is connected with the source bottle of the liquid state diffusion source.

This invention relates to the field of semiconductor materials and device processes, and in particular to semiconductor photoelectric devices. The invention provides a positively-mounted integrated unit diode chip, comprising a first conduction type electrode, a second conduction type electrode, and a diode mesa structure located between the first conduction type electrode and the second conduction type electrode, the diode mesa structure comprises n diode units, the n diode units are arranged in a geometric shape, and the width of the electrode width and the area of the mesa structure are determined according to the current. By adoption of the positively-mounted integrated unit diode chip provided by the invention, the technical problem that the diode structure has great limitation on three important parameters, that is, lumen efficiency, lumen density output and lumen cost in the prior art is solved, the lumen output of the unit diode chip in a unit area is improved, and the lumen cost is reduced.

The invention provides a diode chip of an integrated unit. The diode chip includes a diode mesa structure, including a plurality of diode units. The width of the diode units in the y-axis direction gradually decreases from the middle to both sides of the integrated unit diode chip in the y-axis direction, wherein the y-axis direction is the width direction of the integrated unit diode chip. Through the design of the uneven mesa structure, ultra-uniform current distribution, heat distribution, wavelength distribution and a high-quality LED light source with narrow half-height are obtained; thetechnical problem that a diode structure in the prior art has great limitations on three important parameters of lumen efficiency, lumen density output and lumen cost is solved; lumen output per unitarea of the chip is improved; and lumen cost is reduced.

The invention discloses a pretreatment refining method for a broad width silk fabric and belongs to the technical field of silk product pretreatment. The pretreatment refining method is characterizedby comprising the following treatment steps of charging water in a dyeing groove on a vehicle, performing heating to 58-63 DEG C, performing running for 2 passes, and draining off water; after preheating a large shaft, adding hot water with the temperature being 96-99 DEG C in the dyeing groove, and adding a refining additive; sealing a cover, performing running for 4 passes, and draining off thewater; performing washing for 3 passes with the hot water at the temperature of 96-99 DEG C, and then pouring the shaft with cold water; adding water in the dyeing groove, adding baking soda and desizing powder ZS-20 to prepare a refined solution, performing crystal form refining, performing running for 5-6 passes, and performing 4 cycles of back vehicles; and performing washing for 2 passes withthe hot water at the temperature of 96-99 DEG C, and then pouring the shaft with the cold water. The invention provides the pretreatment refining method aiming to the broad width silk fabric and mainly solves the defects of hard hand feeling of a head and a tail and different hand feelings at the left part and the right part of degumming of a silk fabric on a jig dyeing machine.

The invention provides a vertical integrated unit light emitting diode. The vertical integrated unit light emitting diode comprises a first conductive type electrode, a second conductive type electrode and a diode mesa structure located on the first conductive type electrode. Wherein the diode mesa structure comprises n diode units and a trench structure, and n is greater than or equal to 2; the trench structure is located between the diode units. The diode mesa structure further comprises a first conductive type layer, a second conductive type layer with the thickness of h1 and a quantum wellactive region located on the first conductive type layer, wherein the thickness of the quantum well active region is h2, and the trench depth L is greater than h1 and less than or equal to (h1+h2). The area of the diode mesa structure is determined according to the current diffusion length. The technical problem that a diode structure in the prior art is greatly limited in three important parameters, namely, the lumen efficiency, the lumen density output and the lumen cost, is solved, the lumen output of a unit area chip is improved, and the lumen cost is reduced.

The invention provides a vertical integrated unit light-emitting diode. The vertical integrated unit light-emitting diode comprises a first conductive type electrode, a second conductive type electrode and a diode mesa structure located on the first conductive type electrode, wherein the diode mesa structure comprises n diode units and a trench structure, and n is greater than or equal to 2; the trench structures are located between the diode units; the area of the diode mesa structure is determined according to the current diffusion length. The diode mesa structure also comprises a first conductive type layer, a second conductive type layer, a quantum well active region positioned on the first conductive type layer, wherein the thickness of the first conductive type layer is L1, the thickness of the second conductive type layer is L2, the thickness of the quantum well active region is L3, the trench depth L is greater than (L2+L3) and less than or equal to (L1+L2+L3), and the area ofthe diode mesa structure is determined according to the current diffusion length. According to the invention, the technical problem that a diode structure in the prior art is greatly limited in threeimportant parameters, namely, the lumen efficiency, the lumen density output and the lumen cost, is solved, the lumen output of a unit area chip is improved, and the lumen cost is reduced.

The invention provides a vertical integrated unit light-emitting diode, which comprises a first conductive type electrode, a second conductive type electrode and a diode mesa structure located on thefirst conductive type electrode, wherein the diode mesa structure comprises n diode units and a trench structure, and n is greater than or equal to 2; the trench structure is located between the diodeunits. The diode mesa structure further comprises a first conductive type layer, a second conductive type layer and a quantum well active region located on the first conductive type layer, wherein the depth of the trench structure is less than or equal to the thickness of the second conductive type layer, and the area of the mesa structure is determined according to the current diffusion length.The technical problem that a diode structure in the prior art is greatly limited in three important parameters, namely, the lumen efficiency, the lumen density output and the lumen cost, is solved, the lumen output of a unit area chip is improved, and the lumen cost is reduced.