Integrated unit diode chip capable of uniformly emitting light

An integrated unit, uniform light emitting technology, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of LED light efficiency, heat dissipation and stability limitations, and achieve increased effective light output area, large heat dissipation area, and best heat dissipation performance Effect

Active Publication Date: 2020-11-06
纳微朗科技(深圳)有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, LED light efficiency, heat dissipation and stability under high current will be severely limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integrated unit diode chip capable of uniformly emitting light
  • Integrated unit diode chip capable of uniformly emitting light
  • Integrated unit diode chip capable of uniformly emitting light

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The present embodiment provides 3 kinds of uniform light-emitting integrated unit diode chips, such as Figure 3-5 As shown, it includes a second conductivity type electrode 1, a diode mesa structure 6 located on the first conductivity type electrode, a trench structure 7, and a second conductivity type pad 9. The diode mesa structure includes a plurality of diode units 8 arranged in a geometric shape, the diode units are connected in parallel, and the area of ​​the mesa structure is determined according to the current diffusion length. Wherein the second conductivity type electrode 1 is an n electrode, and the second conductivity type pad 9 is an n pad.

[0037] Such as image 3 As shown, the diode mesa structure includes a total of 56 square diode units in 6 rows and trench structures 7, and the trench structures are located between the diode units. The diode units are evenly distributed in the mesa structure, and the length of the diode units along the x-axis direc...

Embodiment 2

[0044] This embodiment provides two kinds of uniform light-emitting integrated unit diode chips, as shown in Figures 6-7, including a second conductivity type electrode 1, and a diode mesa structure 6 on the first conductivity type electrode is second conductive Type Pad 9. The diode mesa structure includes a plurality of diode units 8 arranged in a geometric shape, the diode units are connected in parallel, and the area of ​​the mesa structure is determined according to the current diffusion length. Wherein the second conductivity type electrode 1 is an n electrode, and the second conductivity type pad 9 is an n pad.

[0045] Such as Figure 6 As shown, the diode mesa includes 6 rows of 26 equal-sized square diode units and trench structures 7, each diode unit has a width of 1 micron to 100 microns along the y-axis direction, and the diode units with trench structures are evenly distributed On the left side of the mesa structure, on the right side of the mesa structure, onl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention provides an integrated unit diode chip capable of uniformly emitting light, which comprises a first conductive type electrode, a second conductive type electrode and a diode mesa structure located on the first conductive type electrode, wherein the diode mesa structure comprises n diode units, and the n diode units are different in length in the x-axis direction or different in widthin the y-axis direction. The planar position function of the n diode units relative to the mesa structure is linear or nonlinear. The area of the mesa structure is determined according to the currentdiffusion length, and n is greater than or equal to 2. A non-uniform mesa structure design is adopted, a high-quality LED light source with super-uniform current distribution, thermal distribution, wavelength distribution and narrow half-height can be obtained, the technical problem that a diode structure in the prior art has great limitations on three important parameters of luminous efficiency,luminous density output and luminous cost is solved, luminous output of a unit area chip is improved, and the luminous cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor materials and device technology, in particular to semiconductor optoelectronic devices. Background technique [0002] In conventional vertical structure LED chips, the current diffusion mainly depends on the n-electrode side, and there are electrode lead-type leads or drill-type leads, but the overall current diffusion is still uneven, resulting in loss of luminous efficiency and uneven heat dissipation, thus affecting the unit. Efficiency and stability of diode chips. This restricts vertical high-power LED chips to provide products with higher lumen output per unit area. Uneven current diffusion, uneven thermal diffusion, and uneven light extraction lead to great limitations in the three important parameters of lumen efficiency, lumen density output, and lumen cost. The vertical LED chip technology currently on the market An effective solution cannot be provided. [0003] The prior art one is Proc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/15H01L33/20
CPCH01L27/156H01L33/20
Inventor 蒋振宇闫春辉
Owner 纳微朗科技(深圳)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap