Symmetrical electrodes for triangular GaN-based light-emitting diode (LED) chip
A technology of light-emitting diodes and symmetrical electrodes, which is applied in circuits, electrical components, semiconductor devices, etc., to achieve uniform current distribution and improve light-emitting efficiency and life.
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[0019] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0020] Such as figure 1 As shown, firstly, the GaN-based epitaxial wafer grown on the sapphire substrate is mesa-etched to form a P-type GaN mesa 1 and an N-type GaN trench 2, and a transparent conductive film is grown on the surface of the P-type layer. The P electrode is deposited on the film, and the N electrode is deposited in the trench 2 which is slightly wider than its dimension. The P-type electrodes include the P-type pad located in the center of the triangular chip, P1 perpendicular to the bottom edge of the triangular chip, P2 parallel to the bottom edge of the triangular chip, and P3 and P4 parallel to the other two sides of the triangular chip. N-type pads at the top corners, N1, N2, and N3 distributed along...
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