Symmetrical electrodes for triangular GaN-based light-emitting diode (LED) chip

A technology of light-emitting diodes and symmetrical electrodes, which is applied in circuits, electrical components, semiconductor devices, etc., to achieve uniform current distribution and improve light-emitting efficiency and life.

Active Publication Date: 2010-08-04
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF6 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the optimization of the chip shape and the optimization of the electrode shape can be organically combined, it will be very beneficial to improve the photoelectric performance of the LED chip. However, there are no patents or literature reports in this regard.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Symmetrical electrodes for triangular GaN-based light-emitting diode (LED) chip
  • Symmetrical electrodes for triangular GaN-based light-emitting diode (LED) chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0020] Such as figure 1 As shown, firstly, the GaN-based epitaxial wafer grown on the sapphire substrate is mesa-etched to form a P-type GaN mesa 1 and an N-type GaN trench 2, and a transparent conductive film is grown on the surface of the P-type layer. The P electrode is deposited on the film, and the N electrode is deposited in the trench 2 which is slightly wider than its dimension. The P-type electrodes include the P-type pad located in the center of the triangular chip, P1 perpendicular to the bottom edge of the triangular chip, P2 parallel to the bottom edge of the triangular chip, and P3 and P4 parallel to the other two sides of the triangular chip. N-type pads at the top corners, N1, N2, and N3 distributed along...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses symmetrical electrodes for a triangular GaN-based light-emitting diode (LED) chip, and belongs to the technical field of LED chips. The LED chip is in a triangular shape; a pad of an N-type electrode is positioned at the vertex angle of the triangular chip; an N-type strip electrode starts from the N-type pad to enclose the periphery along the edge of the triangular LED chip; a pad of a P-type electrode is positioned in the center of the triangular chip; a P-type strip electrode is firstly distributed along the direction perpendicular to the bottom side of the triangle and then distributed parallel to the edge of the triangular LED chip. The N electrode and the P electrode are symmetrically distributed in the LED chip so as to guarantee uniform current distribution of the triangular LED chip. Therefore, the aim of improving the light-extraction efficiency and service life of the triangular LED chip is fulfilled.

Description

technical field [0001] The invention relates to the technical field of LED chips, in particular to a symmetrical electrode of a triangular GaN-based light-emitting diode chip. Background technique [0002] As a lighting source, LED has energy saving (when the efficiency of LED reaches 150lm / W, the energy consumption under the same brightness is about 1 / 10 of incandescent lamp), long life (about 100,000 hours), small size, low voltage, easy to control, Environmental protection and other advantages. These advantages of LED light sources will lead to a revolution in lighting industry technology and applications. Just as semiconductor transistors replace electronic tubes, in a few years, LEDs, as new light source solid-state lighting, will have the opportunity to gradually replace traditional lighting and enter every lighting industry. corner. [0003] At present, GaN epitaxial wafers on sapphire substrates are generally used to prepare high-efficiency GaN-based LEDs. LED chi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38
Inventor 孙莉莉闫发旺张会肖王军喜王国宏曾一平李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap