Diode chip of integrated unit
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
- Publication Date
- 2020-02-14
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Abstract
Description
technical field
[0001] The invention relates to the field of semiconductor materials and device technology, in particular to semiconductor optoelectronic devices. Background technique
[0002] In conventional vertical structure LED chips, the current diffusion mainly depends on the n-electrode side, and there are electrode lead-type leads or drill-type leads, but the overall current diffusion is still uneven, resulting in loss of luminous efficiency and uneven heat dissipation, thus affecting the unit. Efficiency and stability of diode chips. This restricts vertical high-power LED chips from providing products with higher lumen output per unit area. Uneven current diffusion, uneven thermal diffusion, and uneven light extraction lead to great limitations in the three important parameters of lumen efficiency, lumen density output, and lumen cost. The vertical LED chip technology currently on the market An effective solution cannot be provided.
[0003] The prior art one is ...