An integrated unit diode chip

一种集成单元、二极管的技术，应用在电气元件、半导体器件、电路等方向，能够解决LED光效、散热和稳定性限制等问题，达到增加有效出光面积、大散热面积、佳散热性能的效果

Active Publication Date: 2022-06-24
NARVELLUX TECH (SHENZHEN) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, LED light efficiency, heat dissipation and stability under high current will be severely limited

Method used

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Embodiment 1

[0029] This embodiment provides three kinds of integrated unit diode chips with uniform light emission, such as Figure 3-5 As shown, it includes a second conductivity type electrode 1 , a diode mesa structure 6 located on the first conductivity type electrode, a trench structure 7 , and a second conductivity type pad 9 . The diode mesa structure includes a plurality of diode units 8, the plurality of diode units are arranged in a geometric shape, the diode units are connected in parallel, and the area of ​​the mesa structure is determined according to the current spreading length. The second conductive type electrode 1 is an n electrode, and the second conductive type pad 9 is an n pad.

[0030] like image 3 As shown, the diode mesa structure includes a total of 56 square diode cells in 6 rows and a trench structure 7, and the trench structure is located between the diode cells. The diode units are uniformly distributed in the mesa structure, and the length of the diode un...

Embodiment 2

[0037] This embodiment provides two kinds of uniformly emitting integrated unit diode chips, as shown in Figures 6-7, including a second conductivity type electrode 1, a diode mesa structure 6 on the first conductivity type electrode, a second conductivity type Type pad 9. The diode mesa structure includes a plurality of diode units 8 arranged in a geometric shape, the diode units are connected in parallel, and the area of ​​the mesa structure is determined according to the current spreading length. The second conductive type electrode 1 is an n electrode, and the second conductive type pad 9 is an n pad.

[0038] like Image 6 As shown, the diode mesa includes 6 rows of 26 square diode cells of equal size and a trench structure 7, each diode cell has a width of 1 μm to 100 μm along the y-axis direction, and the diode cells with the trench structure are evenly distributed. On the left side of the mesa structure, on the right side of the mesa structure, only electrode lines a...

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Abstract

The invention provides an integrated unit diode chip, which includes a diode mesa structure, and the diode mesa structure includes a plurality of diode units, wherein the width of the diode unit along the y-axis direction gradually decreases from the middle of the integrated unit diode chip to both sides in the y-axis direction. , wherein the y-axis direction is the width direction of the integrated unit diode chip. The invention obtains ultra-uniform current distribution, heat distribution, wavelength distribution, and narrow half-height high-quality LED light source through the design of the uneven mesa structure, and solves the problem of the diode structure existing in the prior art in terms of lumen efficiency, lumen density output, The technical problem of great limitations on the three important parameters of lumen cost improves the lumen output of the chip per unit area and reduces the lumen cost.

Description

technical field [0001] The present invention relates to the field of semiconductor materials and device technology, in particular to semiconductor optoelectronic devices. Background technique [0002] In conventional vertical structure LED chips, the current diffusion mainly depends on the n-electrode side, and there are electrode lead-type leads or drilled-type leads, but the overall current diffusion is still uneven, resulting in loss of luminous efficiency and uneven heat dissipation, thus affecting the unit. Efficiency and stability of diode chips. This limits the vertical high-power LED chips to provide products with higher lumen output per unit area. Uneven current spreading, uneven heat spreading, and uneven light extraction lead to great limitations in three important parameters: lumen efficiency, lumen density output, and lumen cost. The vertical LED chip technology currently on the market Unable to provide a valid solution. [0003] Existing technology one is Pr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/20
CPCH01L27/156H01L33/20
Inventor 蒋振宇闫春辉
Owner NARVELLUX TECH (SHENZHEN) CO LTD
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