Solar cell passivation antireflection film and preparation technology and method thereof

A technology of solar cell and preparation process, which is applied in the direction of metal material coating process, sustainable manufacturing/processing, circuit, etc., can solve the problems such as difficult to achieve anti-reflection effect, poor battery passivation effect, low battery efficiency, etc., to achieve Improve photoelectric conversion efficiency, reduce recombination, and prolong life

Inactive Publication Date: 2013-05-08
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the reflectivity of the silicon nitride anti-reflection coating is not very low. Conventional single-layer or double-layer anti-reflection layers are difficult to achieve a good anti-reflection effect. The film structure is unreasonable, which makes the passivation effect of the battery relatively low Poor, and in the silicon nitride deposition process, the ammonia and hydrogen ions produced have a certain etching effect on the surface of the silicon wafer, which will cause certain damage, so that the efficiency of the final battery is not high

Method used

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  • Solar cell passivation antireflection film and preparation technology and method thereof
  • Solar cell passivation antireflection film and preparation technology and method thereof
  • Solar cell passivation antireflection film and preparation technology and method thereof

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Experimental program
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Effect test

Embodiment 1

[0040] 1. Insert the diffused silicon wafer on the graphite boat. The diffusion surface of the two silicon wafers in each grid of the graphite boat should be opposite, and the non-diffusion surface should be close to the electrode plate of the graphite boat;

[0041] 2. The paddle on the graphite boat, driven by the guide rail, enters the coating furnace tube;

[0042] 3. The temperature of the furnace tube is set at 510°C, the vacuum degree is 1500 mTorr, the power of the radio frequency source is 6500W, and the flow rate of silane into the tube is 100 sccm, CO 2 The flow rate is 1slm, the coating time is 100s, the discharge of the radio frequency source ionizes the reactive gas and undergoes a chemical reaction, thereby depositing a layer of SiO on the surface of the silicon wafer 2 ;

[0043] 4. On the above-mentioned silicon dioxide layer, deposit a layer of first silicon nitride layer whose refractive index n is 2.3. The air flow is 4.6slm, and the coating time is 100s;...

Embodiment 2

[0047] 1. Insert the diffused silicon wafer on the graphite boat. The diffusion surface of the two silicon wafers in each grid of the graphite boat should be opposite, and the non-diffusion surface should be close to the electrode plate of the graphite boat;

[0048] 2. The paddle on the graphite boat, driven by the guide rail, enters the coating furnace tube;

[0049] 3. The temperature of the furnace tube is set at 510°C, the vacuum degree is 1500 mTorr, the power of the radio frequency source is 6500W, and the flow rate of silane into the tube is 500 sccm, CO 2 The flow rate is 3slm, the coating time is 150s, the discharge of the radio frequency source ionizes the reactive gas and undergoes a chemical reaction, thereby depositing a layer of SiO on the surface of the silicon wafer 2 ;

[0050] 4. Deposit a layer of first silicon nitride layer whose refractive index n is 2.1 on the above-mentioned silicon dioxide layer. The air flow is 5.0slm, and the coating time is 150s; ...

Embodiment 3

[0054] 1. Insert the diffused silicon wafer on the graphite boat. The diffusion surface of the two silicon wafers in each grid of the graphite boat should be opposite, and the non-diffusion surface should be close to the electrode plate of the graphite boat;

[0055] 2. The paddle on the graphite boat, driven by the guide rail, enters the coating furnace tube;

[0056] 3. The temperature of the furnace tube is set at 510°C, the vacuum degree is 1500 mTorr, the power of the radio frequency source is 6500W, and the flow rate of the reaction gas silane into the tube is 1000 sccm, CO 2 The flow rate is 5slm, and the coating time is 200s. The discharge of the radio frequency source ionizes the reactive gas and undergoes a chemical reaction, thereby depositing a layer of SiO on the surface of the silicon wafer. 2 ;

[0057] 4. On the above-mentioned silicon dioxide layer, deposit a layer of first silicon nitride layer with a refractive index n of 2.0, the temperature is 510° C., th...

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Abstract

The invention discloses a solar cell passivation antireflection film and a preparation technology and a method of the solar cell passivation antireflection film. The preparation technology and the method utilize a plasma enhanced chemical vapor deposition (PECVD), a layer of silicon dioxide film is deposited on the surface of a silicon slice, then a silicon nitride layer with high refractive index is deposited on the prepared silicon dioxide film, and finally a silicon nitride layer with low refractive index is deposited on the silicon nitride layer with high refractive index. The technology and the method have the advantages of being convenient to operate, low in operation cost, good in passivation and good in antireflection performance for the cell surface. The passivation antireflection film prepared by the technology can obviously improve the open circuit voltage, short circuit current and the cell efficiency of the solar cell, compared with a traditional single-layer or double-layer silicon nitride film.

Description

technical field [0001] The invention belongs to the technical field of battery sheet processing in the solar battery sheet processing process, and in particular relates to a process for coating the surface of the solar battery sheet. Background technique [0002] To improve the efficiency of crystalline silicon solar cells, the absorption of sunlight by the silicon substrate should be improved as much as possible, and the reflectivity of the silicon wafer surface should be reduced. In addition to the number of incidents on the surface, one or more layers of anti-reflection coatings can be coated on the surface of the battery. The current industrial mass production method is to use tubular PECVD equipment to deposit a silicon nitride film on the surface of the diffused silicon wafer. Silicon nitride film has two main functions: good anti-reflection effect, reducing the reflectivity of the silicon wafer surface; abundant hydrogen ions in the film can passivate surface dangling...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18C23C16/34C23C16/52
CPCY02P70/50
Inventor 艾斌赖键均贾晓洁叶雄新梁杭伟吴含封
Owner SUN YAT SEN UNIV
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