Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of weak light type copper indium gallium selenide solar cell applied indoors

A solar cell, copper indium gallium selenide technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of low photoelectric conversion efficiency of cells, unstable power generation of amorphous silicon weak light solar cells, and weak illuminance, etc., and achieve improvement. Indoor power generation efficiency, improving photoelectric conversion efficiency, increasing absorption and utilization effects

Active Publication Date: 2021-03-16
ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These indoor low-light solar cells have more or less application defects: cadmium telluride low-light solar cells are not suitable for indoor places because the cadmium element is harmful to the environment; perovskite low-light solar cells are difficult to mass-produce , the practical application is limited; the manufacturing cost of gallium arsenide weak-light solar cells is too high to be widely promoted; amorphous silicon weak-light solar cells have the problem of unstable power generation, and the light decay phenomenon is obvious after long-term use. Use will be restricted
[0007] 2. The light intensity is weak under indoor conditions. The current mainstream copper indium gallium selenium solar cell device structure cannot effectively collect photons under weak light intensity. The photoelectric conversion efficiency is low under

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of weak light type copper indium gallium selenide solar cell applied indoors
  • Preparation method of weak light type copper indium gallium selenide solar cell applied indoors
  • Preparation method of weak light type copper indium gallium selenide solar cell applied indoors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0045] A method for preparing a low-light copper indium gallium selenide solar cell for indoor application, comprising the following steps:

[0046] (1) Deposit Mo back electrodes on glass substrates or flexible substrates using DC magnetron sputtering; the thickness of Mo back electrodes is 450-550 nm.

[0047] (2) Deposit the NaF pre-layer on the Mo back electrode first, and then deposit the CIGS light-absorbing layer. Depositing the NaF preset layer is specifically: at a vacuum degree of 1-3×10 -3 Raise the substrate temperature to 150-300°C in the co-evaporation chamber of Pa, co-evaporate a layer of NaF on the surface of the Mo back electrode, the temperature of the NaF evaporation source is 760-800°C, and the evaporation time is 10-20min.

[0048] Co-evaporation deposition of CIGS light absorbing layer comprises the following steps:

[0049] The first step: co-evaporating copper, indium, gallium, and selenium metal sources to form a P-type CIGS light absorption layer w...

Embodiment 1

[0057] A Mo back electrode with a thickness of 500 nm was deposited on the soda lime silica glass substrate by DC magnetron sputtering.

[0058] In a vacuum of 1×10 -3 Raise the substrate temperature to 270°C in the co-evaporation chamber of Pa, and co-evaporate a NaF layer on the surface of the Mo back electrode. The NaF evaporation source temperature is 775°C, and the evaporation time is 10min.

[0059] The first step of co-evaporation: raise the temperature of the substrate to 500°C, the temperature of the In evaporation source is 1020°C, the temperature of the Ga evaporation source is 1160°C, the temperature of the Cu evaporation source is 1360°C, the temperature of the Se evaporation source is 480°C, and the evaporation time is 20min. During the evaporation process, the metal source evaporation ratio Cu / (Ga+In) was kept at 0.88, Ga / (Ga+In) at 0.42, and the evaporation thickness was controlled at 1.2 μm.

[0060] The second step of co-evaporation: keep the substrate temp...

Embodiment 2

[0066] A Mo back electrode with a thickness of 550 nm was deposited on a stainless steel substrate by DC magnetron sputtering.

[0067] In a vacuum of 1×10 -3 Raise the substrate temperature to 300°C in the co-evaporation chamber of Pa, and co-evaporate a layer of NaF on the surface of the Mo layer. The temperature of the NaF evaporation source is 760°C, and the evaporation time is 15 minutes.

[0068] The first step of co-evaporation: raise the temperature of the substrate to 520°C, the temperature of the In evaporation source is 1000°C, the temperature of the Ga evaporation source is 1175°C, the temperature of the Cu evaporation source is 1375°C, the temperature of the Se evaporation source is 470°C, and the evaporation time is 23min. During the evaporation process, the metal source evaporation ratio Cu / (Ga+In) was kept at 0.87, Ga / (Ga+In) at 0.45, and the evaporation thickness was controlled at 1.3 μm.

[0069] The second step of co-evaporation: keep the substrate tempera...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Deposition thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a weak light type copper indium gallium selenide solar cell applied indoors. The preparation method comprises the following steps: (1) depositing a Mo back electrode on a substrate; (2) depositing a CIGS light absorption layer on the Mo back electrode by a co-evaporation method; (3) depositing a buffer layer on the CIGS light absorption layer; (4) depositing a high-resistance i-ZnO layer or a ZnxMg(1-x) O layer and an ITO layer or an AZO layer on the buffer layer through magnetron sputtering; (5) annealing the copper-indium-gallium-selenium solarcell by using an atmosphere furnace; (6) preparing an upper electrode of the CIGS soft light battery to obtain a weak light type CIGS solar battery; and (7) cutting and packaging the weak light typeCIGS solar cell to finally obtain a finished product. The weak light type copper indium gallium selenide solar cell prepared by the invention has good photoelectric property under lower illuminance, belongs to an environment-friendly product, and is very suitable for being used as an indoor weak light type solar cell.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a method for preparing a low-light copper indium gallium selenium solar cell for indoor application. Background technique [0002] With the development of Internet of Things technology and the popularization of 5G applications, more and more wireless sensors and receivers are used in daily life, such as wearable sensors, RFID electronic tags, low-power Lora& data acquisition and transmission, and automatic driving technology etc., how to provide stable and durable power supply to these devices has become a problem. [0003] In order to solve the power supply problem of more indoor small devices, low-light solar cells have begun to emerge. Weak light solar cells refer to photovoltaic products that can generate electricity under indoor light conditions, and are generally used for small electronic products used indoors or in environments with low light intensity, such...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18H01L31/032H01L31/0749
CPCH01L31/18H01L31/0323H01L31/0749Y02E10/541Y02P70/50
Inventor 胡煜霖刘宽菲任宇航
Owner ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com