Double-sided power generation cadmium telluride thin film solar cell and preparation method thereof

A solar cell and cadmium telluride technology, which is applied in the field of solar cells, can solve the problems that the absorption layer cannot absorb sunlight from the back side, and the cadmium telluride solar cell cannot achieve double-sided power generation, etc., so as to improve Voc and FF, and improve performance. , Improve the effect of the built-in electric field

Active Publication Date: 2018-06-15
CNBM CHENGDU OPTOELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But at present, the back contact layer in the cadmium telluride thin film solar cell is a carbon paste back contact layer, and the back electrode is a metal layer back electrode, and the carbon paste and the metal are not transparent, so that the absorption layer of the cadmium telluride thin film solar cell cannot absorb the sun from the back. light, resulting in the inability of cadmium telluride solar cells to generate electricity on both sides, further improving their conversion efficiency

Method used

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  • Double-sided power generation cadmium telluride thin film solar cell and preparation method thereof
  • Double-sided power generation cadmium telluride thin film solar cell and preparation method thereof

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Embodiment 1

[0030] A method for preparing a cadmium telluride thin-film solar cell generating electricity on both sides, comprising the following steps:

[0031] (1) Deposit fluorine-doped tin oxide on a glass substrate to form a transparent conductive film layer, and the deposition temperature condition is lower than 400°C;

[0032] (2) Depositing cadmium sulfide on the transparent conductive film layer to form a window layer, the deposition temperature condition is lower than 250°C;

[0033] (3) Depositing cadmium telluride on the window layer to form an absorber layer, the deposition temperature condition is lower than 300°C;

[0034] (4) Depositing cuprous thiocyanate on the absorber layer to form a back contact layer, the deposition temperature condition is lower than 300°C;

[0035] (5) Depositing tungsten-doped indium oxide on the back contact layer to form a back electrode layer, the deposition temperature condition is lower than 300°C;

[0036] (6) Laminate and encapsulate the ...

Embodiment 2

[0039] A method for preparing a cadmium telluride thin-film solar cell generating electricity on both sides, comprising the following steps:

[0040] (1) Deposit fluorine-doped tin oxide on a glass substrate to form a transparent conductive film layer, and the deposition temperature condition is lower than 400°C;

[0041] (2) Depositing cadmium sulfide on the transparent conductive film layer to form a window layer, the deposition temperature condition is lower than 250°C;

[0042] (3) Depositing cadmium telluride on the window layer to form an absorber layer, the deposition temperature condition is lower than 300°C;

[0043] (4) Depositing cuprous thiocyanate on the absorber layer to form a back contact layer, the deposition temperature condition is lower than 300°C;

[0044] (5) Depositing tungsten-doped indium oxide on the back contact layer to form a back electrode layer, the deposition temperature condition is lower than 300°C;

[0045] (6) Laminate and encapsulate the ...

Embodiment 3

[0047] Embodiment 3 (comparative example):

[0048] A method for preparing a cadmium telluride thin film solar cell, comprising the following steps:

[0049] (1) Deposit fluorine-doped tin oxide on a glass substrate to form a transparent conductive film layer, and the deposition temperature condition is lower than 400°C;

[0050] (2) Depositing cadmium sulfide on the transparent conductive film layer to form a window layer, the deposition temperature condition is lower than 250°C;

[0051] (3) Depositing cadmium telluride on the window layer to form an absorber layer, the deposition temperature condition is lower than 300°C;

[0052] (4) Deposit carbon paste on the absorber layer to form a back contact layer, and the deposition temperature condition is lower than 300°C;

[0053] (5) Depositing metallic nickel on the back contact layer to form a back electrode layer, the deposition temperature condition is lower than 300°C;

[0054] (6) Laminate and encapsulate the deposited...

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Abstract

The invention discloses a double-sided power generation cadmium telluride thin film solar cell and a preparation method thereof. The double-sided power generation cadmium telluride thin film solar cell comprises a glass substrate layer, a transparent conductive film layer, a window layer, an absorbing layer, a back contact layer, a back electrode layer, a packaging material layer and a backboard glass layer in turn. Copper thiocyanate is used as the material of the back contact layer. Tungsten-doped indium oxide is used as the material of the back electrode layer. The p-type material copper thiocyanate is used as the back contact layer and the tungsten-doped indium oxide is used as the back electrode layer so that transparent back electrode of the cadmium telluride cell can be realized, double-sided power generation can be realized and the generation capacity of the cell can be enhanced; meanwhile, the built-in electric field can be enhanced by the strong p-type back contact so that the Voc and the FF of the cadmium telluride solar cell can be enhanced and the performance of the cell can be enhanced.

Description

technical field [0001] The invention relates to a double-sided cadmium telluride thin-film solar cell and a preparation method thereof, belonging to the technical field of solar cells. Background technique [0002] Cadmium telluride thin-film solar cell is a kind of compound semiconductor thin-film solar cell with CdTe as the absorbing material. The attention of scientific research institutions and enterprises. The theoretical conversion efficiency of cadmium telluride is as high as 28%, and the highest conversion efficiency in mass production has exceeded 22%, and there is still broad room for development. But at present, the back contact layer in the cadmium telluride thin film solar cell is a carbon paste back contact layer, and the back electrode is a metal layer back electrode, and the carbon paste and the metal are not transparent, so that the absorption layer of the cadmium telluride thin film solar cell cannot absorb the sun from the back. Light, resulting in the i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/073H01L31/18
CPCH01L31/02245H01L31/022466H01L31/073H01L31/1836Y02E10/543Y02P70/50
Inventor 彭寿马立云潘锦功殷新建杨少飞
Owner CNBM CHENGDU OPTOELECTRONICS MATERIAL
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