The application discloses an
infrared narrow-band photoelectric device and a preparation method thereof, and comprises the following steps: after an
electron transport layer is prepared on FTO glass, an active
absorption layer is prepared on the
electron transport layer, the active
absorption layer is treated by
cadmium chloride to passivate defects, a
cuprous thiocyanate layer or a
nickel oxide layer is prepared on the active
absorption layer as a
hole transport layer, when the
hole transport layer is the
nickel oxide layer, a
cuprous thiocyanate layer is prepared on the
hole transport layer,
copper is diffused to the FTO glass interface by annealing the
cuprous thiocyanate layer at 250±5 DEG C for 10-30 min, and a transparent
electrode is prepared on the surface of the cuprous
thiocyanate layer. After the cuprous
thiocyanate layer is prepared, high-temperature annealing treatment is carried out,
copper is fully diffused and doped into the active absorption layer, the P-type
doping concentration is improved, an extremely narrow built-in
electric field is obtained, the carrier collection is narrowed, and the
infrared narrow-band photoelectric device has the advantages of high stability, long service life, fast response speed, high
responsivity, strong waveband selectivity, wide and adjustable response waveband, narrow half-height width and the like.