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Method for preparing cuprous thiocyanate thin film using triethanolamine complexing water-based galvanic deposit liquid

A cuprous thiocyanate, thin film technology, applied in circuits, capacitors, electrical components, etc., can solve problems such as unusability and poor stability of the precursor aqueous solution

Inactive Publication Date: 2008-08-27
TIANJIN UNIV
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Problems solved by technology

However, due to the poor stability of the CuSCN precursor aqueous solution, organic solvents are mostly used in the preparation of CuSCN electrodeposition at home and abroad.
Although a stable CuSCN water-based electrolyte has been prepared, the pH value of this water-based electrolyte is between 2 and 2.6, making it impossible for substrate materials that are not resistant to acid corrosion to be used in this electrodeposition solution, such as ZnO substrates.

Method used

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  • Method for preparing cuprous thiocyanate thin film using triethanolamine complexing water-based galvanic deposit liquid
  • Method for preparing cuprous thiocyanate thin film using triethanolamine complexing water-based galvanic deposit liquid
  • Method for preparing cuprous thiocyanate thin film using triethanolamine complexing water-based galvanic deposit liquid

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Embodiment Construction

[0016] The present invention all adopts chemically pure raw materials. In view of the poor stability of the precursor solution of CuSCN and the stable water-based electrolyte can only be obtained under acidic conditions, this method uses triethanolamine (TEA) as the complexing agent for the first time and prepares it under the condition of pH=8.5-9 A stable water-based electrolyte was obtained; the cleaned indium tin oxide (ITO) conductive glass was used as a deposition substrate and put into a three-electrode battery. figure 1 It is a schematic diagram of a standard three-electrode electrochemical system, Pt is the counter electrode, Ag / AgCl sat As a reference electrode, a p-CuSCN film with excess SCN was prepared by cathodic electrodeposition.

[0017] The electrolyte composition of the specific embodiment is shown in Table 1, and the electrodeposition process parameters are shown in Table 2.

[0018] Table 1

[0019] No.

M CuSO4

CuSO 4 / TEA molar ra...

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Abstract

The present invention discloses a method for preparing p-type cuprous thiocyanate thin films, comprising the following steps that: triethanolamine, namely TEA is added to CuSO4 solution to form steady CuIITEA water solution, and then KSCN is added so as to obtain water-based electrolyte of electrodeposited CuSCN; washed indium tin oxide conductive glass is used as sedimentation basement and put into a three-electrode battery containing 0.01MCuSO4+0.10MTEA+0.05MKSCN water-based electrolyte; by exerting the working voltage between -200 mV and -500mV and carrying out the electrodeposition for half an hour at 0-50 DEG C, a compact CuSCN thin film is obtained. The p-CuSCN thin film is used as solid electrolyte for nano-crystalline photoelectrochemical solar cells.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor film, in particular to a method for preparing a p-type cuprous thiocyanate film by electrodeposition. Background technique [0002] Cuprous thiocyanate (CuSCN) has two crystal forms, α and β. α-CuSCN belongs to the orthorhombic system; β-CuSCN belongs to the trigonal system, including polymorphs such as 3R and 2H. β-CuSCN is a layered close-packed structure formed by CuSCN units. In the crystal structure, Cu I The (001) plane is composed of chain SCN parallel to the c-axis direction - Ionic layer separation, each Cu I Surrounded by three S atoms and one N atom, it forms a tetrahedral coordination. β-CuSCN exhibits different photoelectric properties and solid-state properties at different Cu / SCN stoichiometric ratios. When Cu is excessive, it is an n-type semiconductor, which is very sensitive to light, and has a strong absorption peak and a weak absorption peak at 630nm (~2.0eV) and 9...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01G9/032H01G9/20H01M14/00H01M10/38C25D9/04
CPCY02E60/10Y02P70/50
Inventor 靳正国倪勇付亚楠余芬
Owner TIANJIN UNIV
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