Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for manufacturing cuprous thiocyanate membrane in liquid phase condition

A technology of cuprous thiocyanate and thiocyanate, applied in thiocyanic acid, chemical instruments and methods, solutions of liquid solvents at room temperature, etc., can solve the problems of slow film growth rate, film deposition failure, etc., and achieve stability Good, reduce production energy consumption, improve the effect of growth rate

Inactive Publication Date: 2008-01-23
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The outstanding problem of the SILAR method is that the growth rate of the film is extremely slow. Under typical conditions, each deposition cycle can only grow a film with a thickness of 0.1 nanometers; if a film with a thickness of 100 nanometers needs to be grown, at least 1000 deposition cycles are required.
In addition, for the deposition of CuSCN thin films, the problem of partial dissolution of deposited CuSCN in the process of repeated immersion in copper precursor solution will become very prominent, and severe cases may lead to failure of thin film deposition.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing cuprous thiocyanate membrane in liquid phase condition
  • Method for manufacturing cuprous thiocyanate membrane in liquid phase condition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] 1. Preparation of precursor solution:

[0033] Copper source precursor: weigh copper sulfate (CuSO4 .5H 2 (O) 0.25g, be dissolved in 50ml deionized water, add sodium thiosulfate (Na 2 S 2 o 3 )0.744g, fully stirred and dissolved to obtain [Cu(S 2 o 3 )] - Complex solution, copper ion concentration in the copper source precursor is 0.002mol / L, Na 2 S 2 o 3 The concentration is 0.006mol / L, and the molar concentration ratio of complexing agent to copper ion is 3;

[0034] Thiocyanate precursor: Weigh 0.0253g of sodium thiocyanate (NaSCN) and dissolve it in 50ml of deionized water to obtain a NaSCN precursor solution with a concentration of 0.025mol / L;

[0035] 2. Substrate preparation.

[0036] Ordinary glass is used as the substrate, and the cleaning process is as follows: firstly, it is etched and cleaned with hot dilute sulfuric acid (about 60°C) for 30 minutes; then it is fully rinsed with acetone, ethanol and deionized water, preferably Blow dry with Ar flo...

Embodiment 2

[0050] 1. Preparation of precursor solution:

[0051] Copper source precursor: weigh copper sulfate (CuSO 4 .5H 2 (O) 2.5g, be dissolved in 50ml deionized water, add sodium thiosulfate (Na 2 S 2 o 3 )7.44g, fully stirred and dissolved to obtain [Cu(S 2 o 3 )] - complex solution. Thiocyanate precursor: Weigh 2.53g of sodium thiocyanate (NaSCN) and dissolve it in 50ml of deionized water to obtain a NaSCN precursor solution.

[0052] 2. Substrate preparation.

[0053] Select a single crystal silicon wafer (111) as the substrate, and the cleaning process is as follows: first, wash with 1:1 hydrofluoric acid for 10 minutes to remove the surface oxide layer, then rinse with acetone, ethanol and deionized water in sequence, preferably with Air-dried with Ar, placed in a desiccator for later use.

[0054] 3. Film growth.

[0055] b. Transfer the substrate to the NaSCN precursor solution, so that the [Cu(S 2 o 3 )] - with SCN - response, and perform SCN - The adsorption...

Embodiment 3

[0061] Using copper chloride or copper nitrate as the copper source, potassium thiosulfate as the thiocyanate precursor, and sapphire as the substrate, the process steps are the same as in Examples 1 and 2, and the results are also similar.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing CuSCN film under room temperature and liquid phase, which is characterized in that: (1) inorganic copper salt is selected as a precursor, the concentration of Cu2+ is 0.001-0.1mol / L; (2) Na2S2O3 is used as complex, the mole concentration with copper ion is 2 swung dash 5; (3) sulfocyanide of alkaline metal is used as SCN- ion precursor, in concentration 0.002-0.2mol / L, and the concentration ratio of SCN- to Cu2+ is 1-15; (4) deposition of film is carried out by way of ''serial ion layer absorption and reaction'' (SILAR), the liner is first immersed in Cu2+ precursor solution; then the liner is placed in SCN- precursor solution for reaction; the liner is immersed in Cu2+ precursor again; above operation is repeated; finally the liner is fully washed by de-ionizing water. The CuSCN film prepared has dense and even film layer, the grain size is as small as 20-50 nm; and the optic transmissivity of 400-800 nm wavelength is 50-70%.

Description

technical field [0001] The invention relates to a method for preparing a cuprous thiocyanate (CuSCN) thin film under room temperature liquid phase conditions. The prepared thin film can be applied to semiconductor optoelectronics, catalysis, seawater battery electrodes, solid electrolytes for dye-sensitized solar cells, and the like. Background technique [0002] Cuprous thiocyanate (CuSCN) is an inorganic semiconductor material with multiple functions, which is widely used in various fields of national economy and scientific research. For example, as an antifungal and fungicide, it is used for antifouling coatings on ship bottoms or fruit tree protection; or it is used for lubricating oils, grease additives, non-silver salt photosensitive materials, organic synthesis catalysts, polymerization reaction regulators, electrode materials for seawater batteries, polymers, etc. Vulcanizate stabilizers, fiberglass dye carriers, dental abrasives, and more. β-CuSCN in the form of a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B7/00C30B7/14C01C3/20
CPCC30B7/005
Inventor 高相东李效民于伟东邱继军甘小燕
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com