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Cuprous oxide nanowire porous film as well as preparation method and application thereof

A technology of porous film and cuprous oxide, which is applied in the field of nanomaterials and photoelectric functional materials

Active Publication Date: 2014-04-30
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most nanowires are less than 50 nm wide

Method used

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  • Cuprous oxide nanowire porous film as well as preparation method and application thereof
  • Cuprous oxide nanowire porous film as well as preparation method and application thereof
  • Cuprous oxide nanowire porous film as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Deposit a copper film with a thickness of about 100 nanometers on the surface of the glass slide, and then immerse the copper film in an ammonium thiocyanate solution with a concentration of 1 mmol / L. After soaking for 2 hours, sulfur can be formed on the surface of the glass slide. The cuprous cyanate film is fully washed with deionized water, and then the cuprous thiocyanate film is immersed in a sodium hydroxide solution with a concentration of 10 mmol / L for 1 hour, and then the film is taken out from the solution and washed with deionized water. After fully washing and then drying, the cuprous oxide nanowire porous film can be formed in situ on the surface of the glass slide.

[0025] figure 1 (a) and figure 1 (b) is the SEM image of the cuprous oxide film at different magnifications, showing that the cuprous oxide nanowires are randomly stacked to form a interwoven film throughout. figure 1 (c) is a side SEM image of the cuprous oxide film, showing that most n...

Embodiment 2

[0028] Deposit a copper film with a thickness of about 50 nanometers on the surface of the glass slide, and then immerse the copper film in an ammonium thiocyanate solution with a concentration of 1 mmol / L. After soaking for 2 hours, sulfur can be formed on the surface of the glass slide. The cuprous cyanate film is fully washed with deionized water, and then the cuprous thiocyanate film is immersed in a sodium hydroxide solution with a concentration of 10 mmol / L for 1 hour, and then the film is taken out from the solution and washed with deionized water. After fully washing and then drying, the cuprous oxide nanowire porous film can be formed in situ on the surface of the glass slide.

[0029] The results of surface morphology and structural analysis are similar to those of Example 1.

Embodiment 3

[0031] Deposit a copper film with a thickness of about 150 nanometers on the surface of a flexible PET plastic substrate, then immerse the copper film in an ammonium thiocyanate solution with a concentration of 1 mmol / L, soak for 5 hours, and then it can be deposited on the surface of a glass slide. Form a cuprous thiocyanate film, fully wash with deionized water, and then immerse the cuprous thiocyanate film into a sodium hydroxide solution with a concentration of 10 mmol / L to react for 3 hours, then take out the film from the solution, and use The ion water is fully washed, and then dried, and the cuprous oxide nanowire porous film can be formed in situ on the surface of the PET plastic substrate.

[0032] The cuprous oxide nanowire porous film deposited on the surface of the PET plastic substrate can be bent many times without obvious change.

[0033] A typical SEM image such as image 3 Shown, similar to the result in Example 1.

[0034] The thickness of the cuprous oxide ...

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Abstract

The invention belongs to the technical field of nano materials, relates to a photoelectric function material, and particularly relates to a cuprous oxide nanowire porous film as well as a preparation method and an application thereof. The cuprous oxide nanowire porous film is obtained by using copper thiocyanate film as a precursor to react with aqueous alkali. The copper oxide nanowire porous film provided by the invention can act as a photoelectric conversion material and also has wide use in the field of function materials and components.

Description

Technical field [0001] The present invention is a technology field of nanomaterials and photoelectric functional materials, and it involves a multi -porous film and its preparation methods and applications of oxidized Asian copper nano -nano. Background technique [0002] Under mild conditions, preparing a large -area semiconductor film has always been the goal of people's efforts, because this is a feasible way to greatly reduce the cost of manufacturing costs for photoelectric functional devices and large -scale electronic devices.In recent years, Solution Processing Method has proven to be able to make a variety of semiconductor film. The solution treatment method is also suitable for preparing a large area of film, and it is also particularly easy to expand production scale.[(1) Sun Y, Rogers ja. Advanced Materials 2007; 19: 1897; (2) Arias AC et al., Chemical Reviews 2010; 110: 3; (3) Ji X, DON YW, Huo ZQ, XU W ElectroChemical and solid-state Letters 2009; 12: H344; (4) yuha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G3/02B82Y30/00B82Y40/00
Inventor 徐伟肖星星夏鹏
Owner FUDAN UNIV
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