This invention provides a chemical mechanical
polishing (CMP)
slurry and its application. The CMP
slurry comprises: a catalyst, a stabilizer, an oxidant, a pH adjuster,
abrasive particles, a
corrosion inhibitor, and water. The
corrosion inhibitor is a
nitrogen-containing heterocyclic
carboxylic acid compound, wherein the
nitrogen-containing heterocyclic
carboxylic acid compound includes at least one selected from nicotinic acid,
isonicotinic acid, pyridinecarboxylic acid, imidazocarboxylic acid, pyrazolecarboxylic acid, 3-pyridineacetic acid, 3-pyridinepropionic acid, 3-methyl-2-pyridinecarboxylic acid, and L-
piperidine acid. The CMP
slurry provided by this invention can simultaneously polish
tungsten and
silicon oxide, and can also control the
polishing rate of
silicon oxide while inhibiting
tungsten corrosion, thus making it suitable for different application scenarios. In addition, the CMP slurry has good stability and can maintain its performance even after long-term standing.