Organic-inorganic hybrid solar cell and preparation method thereof
A solar cell and inorganic technology, applied in the field of solar cells, can solve problems such as difficult large-scale application, low photoelectric conversion efficiency, and high cost, and achieve the effects of easy industrial production, improved photoelectric conversion efficiency, and improved contact barrier
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[0024] A method for preparing an organic-inorganic hybrid solar cell proposed in a specific embodiment of the present invention comprises the following steps:
[0025] (1) N-type silicon wafers are subjected to texturing treatment, and then soaked in HF solution to remove the natural silicon oxide layer on the surface of the silicon wafers;
[0026] (2) Passivate the N-type silicon chip: Spin-coat a mixed solution containing niobium ethoxide and hafnium ethoxide on the upper surface of the N-type silicon chip, and dry it, then apply The surface is spin-coated with the mixed solution containing niobium ethoxide and hafnium ethoxide, and then annealed for the first time to form a passivation film on the upper and lower surfaces of the silicon wafer;
[0027] (3) Preparation of strontium chloride interface modification film: the upper surface of the N-type silicon wafer obtained in step (2) is spin-coated with an aqueous solution containing strontium chloride, wherein the concent...
Embodiment 1
[0042] A method for preparing an organic-inorganic hybrid solar cell, comprising the following steps: (1) N-type silicon chip is subjected to texturing treatment, then soaked in HF solution to remove the natural silicon oxide layer on the surface of the silicon chip; (2) The N-type silicon chip is subjected to passivation treatment: the upper surface of the N-type silicon chip is spin-coated with a mixed solution containing niobium ethoxide and hafnium ethoxide, and dried, and then the lower surface of the silicon chip is spin-coated with the above-mentioned A mixed solution containing niobium ethoxide and hafnium ethoxide is then annealed for the first time to form a passivation film on the upper and lower surfaces of the silicon wafer; (3) preparation of strontium chloride interface modification film: obtained in step (2) The upper surface of the N-type silicon wafer is spin-coated with an aqueous solution containing strontium chloride, wherein the concentration of strontium ...
Embodiment 2
[0046] A method for preparing an organic-inorganic hybrid solar cell, comprising the following steps: (1) N-type silicon chip is subjected to texturing treatment, then soaked in HF solution to remove the natural silicon oxide layer on the surface of the silicon chip; (2) The N-type silicon chip is subjected to passivation treatment: the upper surface of the N-type silicon chip is spin-coated with a mixed solution containing niobium ethoxide and hafnium ethoxide, and dried, and then the lower surface of the silicon chip is spin-coated with the above-mentioned A mixed solution containing niobium ethoxide and hafnium ethoxide is then annealed for the first time to form a passivation film on the upper and lower surfaces of the silicon wafer; (3) preparation of strontium chloride interface modification film: obtained in step (2) The upper surface of the N-type silicon wafer is spin-coated with an aqueous solution containing strontium chloride, wherein the concentration of strontium ...
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