Perovskite solar cell based on p-methoxyphenylacetic acid passivator

A technology of p-methoxybenzene and solar cells, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problem of limited performance improvement of devices

Pending Publication Date: 2021-07-30
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most passivators can only reduce or eliminate one type of

Method used

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  • Perovskite solar cell based on p-methoxyphenylacetic acid passivator
  • Perovskite solar cell based on p-methoxyphenylacetic acid passivator
  • Perovskite solar cell based on p-methoxyphenylacetic acid passivator

Examples

Experimental program
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Effect test

Embodiment 1

[0020] 1) Use ITO / glass as the substrate, and clean it ultrasonically with cleaning agent, deionized water, acetone, and isopropanol.

[0021] 2) Using SnO with a concentration of 2.5wt.% 2 The electron transport layer was prepared from the solution and spin-coated at 4000rpm for 30s.

[0022] 3) On SnO 2 On the transport layer, a perovskite absorber layer was prepared by a two-step spin-coating method. 1.5M PbI 2 The solution was spin-coated at 1500rpm for 30s and annealed at 70°C. Then in PbI 2 The organic salt solution was added dropwise on the surface of the layer, spin-coated at 2000rpm for 30s and annealed at 150°C to obtain a perovskite film.

[0023]4) Prepare a p-methoxyphenylacetic acid passivation layer on the perovskite absorber layer. The solubility of p-methoxyphenylacetic acid solution is 3mg / ml, the solvent is chlorobenzene, and it is spin-coated at 5000rpm for 30s.

[0024] 5) Prepare a Spiro-OMeTAD hole transport layer on the passivation layer, and spi...

Embodiment 2

[0031] 1) Use ITO / glass as the substrate, and clean it ultrasonically with cleaning agent, deionized water, acetone, and isopropanol.

[0032] 2) Using SnO with a concentration of 2.5wt.% 2 The electron transport layer was prepared from the solution and spin-coated at 4000rpm for 30s.

[0033] 3) On SnO 2 On the transport layer, a perovskite absorber layer was prepared by a two-step spin-coating method. 1.5M PbI 2 The solution was spin-coated at 1500rpm for 30s and annealed at 70°C. Then in PbI 2 The organic salt solution was added dropwise on the surface of the layer, spin-coated at 2000rpm for 30s and annealed at 150°C to obtain a perovskite film.

[0034] 4) Anisole passivation layer was prepared on the perovskite absorber layer. Anisole was diluted in chlorobenzene at a concentration of 3 mg / ml and spin-coated at 5000 rpm for 30 s.

[0035] 5) Prepare a Spiro-OMeTAD hole transport layer on the passivation layer, and spin-coat the Spiro-OMeTAD solution at 4000rpm for...

Embodiment 3

[0038] 1) Use ITO / glass as the substrate, and clean it ultrasonically with cleaning agent, deionized water, acetone, and isopropanol.

[0039] 2) Using SnO with a concentration of 2.5wt.% 2 The electron transport layer was prepared from the solution and spin-coated at 4000rpm for 30s.

[0040] 3) On SnO 2 On the transport layer, a perovskite absorber layer was prepared by a two-step spin-coating method. 1.5M PbI 2 The solution was spin-coated at 1500rpm for 30s and annealed at 70°C. Then in PbI 2 The organic salt solution was added dropwise on the surface of the layer, spin-coated at 2000rpm for 30s and annealed at 150°C to obtain a perovskite film.

[0041] 4) Prepare a phenylacetic acid passivation layer on the perovskite absorber layer. The solubility of the phenylacetic acid solution is 3mg / ml, the solvent is chlorobenzene, and it is spin-coated at 5000rpm for 30s.

[0042] 5) Prepare a Spiro-OMeTAD hole transport layer on the passivation layer, and spin-coat the Sp...

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Abstract

The invention discloses a perovskite solar cell based on an organic molecule passivator and a preparation method of the perovskite solar cell, and belongs to the field of solar cells. The structure comprises a transparent conductive substrate, an electron transport layer, a perovskite absorption layer, an organic molecule passivation layer, a hole transport layer and a metal electrode. The organic molecule passivator is at least one of compounds and derivatives thereof, wherein benzene rings of the compounds comprise -COOH or -CH3O, such as p-methoxyphenylacetic acid, anisole and phenylacetic acid. When the passivator is used for passivating the upper surface and the lower surface of the perovskite thin film or the interior of the thin film, the defect density on the surface of the perovskite thin film or in the perovskite thin film can be effectively reduced, non-radiative recombination is inhibited, the built-in electric field of the perovskite thin film is enhanced, and the performance of the perovskite solar cell is improved. The organic molecule passivator provided by the invention is suitable for single-junction perovskite solar cells, perovskite/crystalline silicon or perovskite/perovskite multi-junction laminated solar cells and the like, and has a wide application prospect.

Description

technical field [0001] The invention belongs to the field of perovskite solar cells, and in particular relates to a perovskite solar cell structure based on p-methoxyphenylacetic acid (MPA) as a passivating agent and a preparation method thereof. [0002] technical background [0003] Despite the rapid development of organic-inorganic metal halide perovskite solar cells due to their extraordinary optoelectronic properties, a large number of defects still exist in polycrystalline perovskite thin films due to fast processing conditions and complex precursor compositions. . These defects act as nonradiative recombination centers, thereby negatively affecting the performance and stability of perovskite solar cells. Due to the low thermal stability of perovskite crystals, organic cations may volatilize during thermal annealing of perovskite films, which will lead to rapid decomposition of perovskite films and a large amount of under-coordinated Pb 2+ Formation. Evaporation or o...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/00H10K71/311H10K85/00H10K30/10H10K30/80Y02E10/549
Inventor 李跃龙周芯
Owner NANKAI UNIV
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