Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Nitrogen-doped nickel oxide and zinc oxide near ultraviolet detector

A near-ultraviolet light and nickel oxide technology, applied in the field of photodetectors, can solve the problems of large band gap, difficult detection, and low carrier concentration

Inactive Publication Date: 2019-02-01
ZHEJIANG NORMAL UNIVERSITY
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, some studies on NiO / ZnO ultraviolet light detectors have been carried out at home and abroad, and good results have been achieved, but there are still some difficulties in the detection of weak ultraviolet light and UVA near ultraviolet light (wavelength 300-420nm).
The reason is that non-intentionally doped NiO is a weak p-type semiconductor, and the carrier concentration is very low, resulting in low conductivity of NiO and weak built-in electric field between NiO / ZnO.
In addition, NiO has a large forbidden band width, and it does not absorb ultraviolet light with a wavelength greater than 330nm, that is, it is transparent. Therefore, the efficiency of NiO / ZnO detectors in detecting UVA near ultraviolet light is very low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nitrogen-doped nickel oxide and zinc oxide near ultraviolet detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0011] 1) Preparation of the detector

[0012] The structure of the nitrogen-doped nickel oxide / zinc oxide near-ultraviolet photodetector in the present embodiment is Ag electrode 1, NiO:N layer 2 (30nm), ZnO layer 3 (70nm) and FTO layer 4, wherein ZnO, NiO: N and Ag thin films were sequentially grown in a multi-target magnetron sputtering deposition system. The substrate is FTO conductive glass, the square resistance is 6~10Ω, and the size is 40×40mm 2 . The target materials are metal silver (Ag), metal nickel (Ni) and ZnO respectively, the sputtering gas is argon, oxygen and nitrogen, and the purity of the target material and gas is 99.999%. The background vacuum of the sputtering chamber is 5×10 -4 Pa, the distance between the target and the substrate is 6.0-8.0cm, the substrate temperature is room temperature, and the working pressure is 0.1-0.5Pa. The frequency of the radio frequency power supply is 13.56MHz, and the thickness of the sputtered film is monitored by a f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a nitrogen-doped nickel oxide and zinc oxide near ultraviolet detector of the following structure of Ag / NiO:N / ZnO / FTO conductive glass, and FTO represents fluorine doped indiumoxide. According to the detector, the carrier concentration in NiO is improved, the conductivity is increased, a built-in electric field is enhanced, the forbidden band is narrower, absorption wavelength moves towards the long wave direction, and the detector is highly sensitive to weak UVA near ultraviolet.

Description

technical field [0001] The invention relates to a nitrogen-doped nickel oxide-zinc oxide near-ultraviolet photodetector, which belongs to the technical field of photoelectric detectors. Background technique [0002] Ultraviolet detection technology has a wide range of applications in military and civilian fields such as missile early warning, guidance, ultraviolet communication, high-voltage corona monitoring, flame detection, pollution detection, and solar illumination detection. Photoelectric detection technology. At present, the most commonly used ultraviolet detectors are silicon-based detectors. However, due to the narrow band gap of silicon, in order to avoid the response of low-energy radiation such as visible light and near-infrared light to the detector, a passivation layer and a filter layer are usually required. This results in a reduction in the effective area of ​​the device. Wide bandgap semiconductor materials, such as GaN, AlN, ZnS, SiC, etc., due to their ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/109H01L31/0336
Inventor 黄仕华陆肖励
Owner ZHEJIANG NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com