MoS2/Si photovoltaic device with ITO/Pd double-layer structured composite electrode and preparation method thereof

A composite electrode, double-layer structure technology, used in photovoltaic power generation, electrical components, semiconductor devices, etc., can solve the deterioration of metal layer continuity, reduce the collection efficiency of photo-excited carriers, reduce the short-circuit current density of the device and the light conversion efficiency. and other photovoltaic performance issues, to achieve the effects of reducing absorption, improving sunlight transmittance, reducing open circuit voltage and light conversion efficiency

Active Publication Date: 2017-02-22
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] However, the ensuing problem is that this ultra-thin thickness leads to the deterioration of the continuity of the metal layer, which reduces the collection effici

Method used

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  • MoS2/Si photovoltaic device with ITO/Pd double-layer structured composite electrode and preparation method thereof
  • MoS2/Si photovoltaic device with ITO/Pd double-layer structured composite electrode and preparation method thereof
  • MoS2/Si photovoltaic device with ITO/Pd double-layer structured composite electrode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] The preparation method is as follows:

[0078] The first step, silicon substrate surface passivation step

[0079] Select a p-type Si single crystal substrate with a resistivity of 1-2 Ω cm and a crystal plane orientation of (100) plane, and ultrasonically clean it in alcohol, acetone and deionized water for 180 s in sequence;

[0080] Take out the cleaned Si substrate and dry it with nitrogen;

[0081] Then, put the dried Si single crystal substrate into a beaker filled with a hydrogen peroxide solution with a volume fraction of 30%, place the beaker in a water bath, and heat it in a water bath at 100°C for 10 minutes to perform surface passivation. change;

[0082] Take it out, wash it in deionized water for one minute; take it out and dry it with high-purity nitrogen, that is, the surface passivation of the Si single crystal substrate is completed, and the upper and lower surfaces have SiO 2 Si substrate of passivation layer;

[0083] The second step, MoS 2 Thin...

Embodiment 2

[0096] Explanation: This example is a comparative example, the front electrode of the device only has a Pd metal layer, and there is no ITO conductive transparent oxide layer.

[0097] The first step to the third step are all the same as in Example 1.

[0098] The fourth step is the preparation step of the In back electrode, the method is as follows:

[0099] Take out the surface deposited with Pd / MoS 2 The Si single crystal substrate of the multilayer thin film is welded to the SiO on the lower surface of the Si substrate by soldering. 2 On the passivation layer, an In back electrode is formed.

[0100] Product performance test results:

[0101] After testing, at 30mWcm -2 Under white light conditions, the prepared MoS 2 / Si heterojunction photovoltaic solar cell device with a photoexcited current density of 5.5 mAcm -2 , open circuit voltage 0.35V, conversion efficiency 2.2%.

Embodiment 3

[0103] Explanation: This example is a comparative example. The front electrode of the device only has an ITO transparent conductive layer, and the ITO transparent conductive layer is directly sputtered and deposited on MoS 2 on the surface of the film layer. That is, there is no Pd metal layer.

[0104] The first step and the second step are all the same as in Example 1.

[0105] The third step is the surface deposition step of the ITO transparent conductive layer, the method is as follows:

[0106] Replace the tray with the sample directly above the ITO target;

[0107] Adjust the temperature of the Si single crystal substrate to the third temperature of 80°C, adjust the argon gas pressure to the third pressure of 0.5Pa, adopt DC magnetron sputtering technology, and use the ionized ions under the condition of constant 30W sputtering power Bombarding the ITO target, depositing an ITO conductive transparent oxide layer with a thickness of 80nm on the surface of the above-men...

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Abstract

The invention discloses a MoS2/Si heterojunction photovoltaic device with an ITO/Pd double-layer structured composite electrode. The device is of a composite layer layered structure, and sequentially comprises an ITO transparent conductive layer, a Pd metal layer, a MoS2 thin film layer, a Si single crystal substrate with the upper surface and the lower surface being provided with a SiO2 passivation layer and a metal In back electrode from top to bottom. The preparation method comprises the steps that the surfaces of different target materials are sequentially bombarded by using high-energy electrons through mainly adopting a DC magnetic control sputtering technology, a MoS2 target material is firstly bombarded, then a Pd target material is bombarded and finally an ITO target material is bombarded so as to sputter a large number of ions, and the ions are successively deposited at the surface of the Si single crystal substrate on which passivation processing is performed and superimposed into a multi-layer structured material; and a back electrode layer is prepared. The light conversion efficiency of the MoS2/Si photovoltaic device with the ITO/Pd double-layer structured composite structure is improved over 100% compared with similar products in the prior art. The MoS2/Si photovoltaic device is simple in process, simple and convenient to control, high in rate of finished products, low in manufacturing cost and suitable for industrial production.

Description

technical field [0001] The invention relates to a semiconductor heterojunction-based solar cell device and a preparation method thereof, in particular to a MoS compound electrode with an ITO / Pd double-layer structure 2 / Si heterojunction photovoltaic solar cell device and its preparation method. Background technique [0002] Molybdenum disulfide (MoS 2 ) has strong light absorption characteristics, and its visible light absorption coefficient exceeds that of Si material by an order of magnitude, and MoS 2 The photoelectric power density formed by the device per unit area is three orders of magnitude higher than that of Si. Therefore, MoS 2 It has received extensive attention in the field of developing new photovoltaic devices. [0003] Based on the current mature processing technology of Si semiconductor, the MoS 2 Superimposed with Si to form a heterogeneous thin film, which creates a convenient way for the development of high-efficiency and low-cost photovoltaic devic...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/072H01L31/18
CPCH01L31/022441H01L31/022475H01L31/072H01L31/1804Y02E10/547Y02P70/50
Inventor 郝兰众刘云杰韩治德薛庆忠
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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