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SnO2 porous structure perovskite photovoltaic cell and preparation method thereof

A porous structure, photovoltaic cell technology, applied in photovoltaic power generation, circuits, electrical components and other directions, can solve the problems of long-term stability, not suitable for industrial applications, reduce battery stability and other problems, achieve large commercial application prospects, good Photoelectric conversion efficiency and stable performance, low cost effect

Active Publication Date: 2015-04-08
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional preparation of TiO2 electron transport layer (including dense and porous layer) and Al2O3 porous layer generally adopts the spin coating method, and High temperature sintering is required, the process is more complicated and consumes a lot of energy. In addition, the ultraviolet attenuation of TiO2 will reduce the stability of the battery
ZnO is soluble in both acids and bases, is an amphoteric oxide, has problems with long-term stability, and is not well suited for industrial applications

Method used

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  • SnO2 porous structure perovskite photovoltaic cell and preparation method thereof
  • SnO2 porous structure perovskite photovoltaic cell and preparation method thereof
  • SnO2 porous structure perovskite photovoltaic cell and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] 1) Wash. In the test, the FTO conductive glass substrate should be cleaned and dried first. Clean the FTO conductive glass of appropriate size with detergent first, and then rinse it with deionized water. Then use deionized water, acetone, ethanol to clean ultrasonically, and finally blow dry with nitrogen for later use.

[0049] 2) Perovskite CH 3 NH 3 PB 3 Absorbing layer preparation. Configuration of perovskite solution: 1M PbCl 2 Dissolve in dimethylformamide and stir at 60°C for 24 hours. Then use the homogenizer to mix the PbCl 2 The solution was spin-coated on the FTO conductive glass substrate, and then annealed at 70°C for 30 minutes. Spin coated with PbCl 2 The sample was placed in 10 mg / L CH 3 NH 3 Immerse in isopropanol solution for 5 minutes; finally rinse the sample with isopropanol, blow dry with nitrogen, and anneal at 70°C for 30 minutes.

[0050] 3) Preparation of hole transport layer. perovskite CH with a homogenizer 3 NH 3 PB 3 A laye...

Embodiment 2

[0054] (1) cleaning. With embodiment 1.

[0055] (2) SnO 2 Dense layer preparation. 0.1 M SnCl 2 2H 2 O ethanol solution was stirred for 30 minutes, and then the precursor solution was spin-coated on the cleaned FTO conductive glass with a homogenizer; the spin-coated SnO 2 The solution of the FTO conductive glass was annealed at 200 °C for 30 min.

[0056] (3) Perovskite CH 3 NH 3 PB 3 Absorbing layer preparation. With embodiment 1.

[0057] (4) Preparation of hole transport layer. With embodiment 1.

[0058] (5) Electrode preparation. Same implementation benefit 1.

[0059] (6) Test, same as Example 1. The obtained photoelectric conversion efficiency parameters are, open circuit voltage 1.073 V, short circuit current density 15.84 mA / cm 2 , fill factor 0.548, conversion efficiency 9.314%.

Embodiment 3

[0061] (1) cleaning. With embodiment 1.

[0062] (2) SnO 2 Dense layer preparation. With embodiment 2.

[0063] (3) SnO 2 Porous layer preparation. 90 mg SnCl 2 2H 2 O was dissolved in 4 mL ethanol solution and stirred for 30 min to obtain SnO 2 Sol; add 0.3g polyethylene glycol with a molecular weight of 20000 and 100 μL Triton x-100 to the above sol, and stir thoroughly for more than 12 hours to obtain SnO 2 Precursor;

[0064] (4) Mix SnO with a homogenizer 2 Precursor spin-coated on annealed SnO 2 on the dense layer;

[0065] (5) Rapidly anneal the product obtained in step 4 at 500 degrees Celsius for 60 seconds.

[0066] (6) Perovskite CH 3 NH 3 PB 3 Absorbing layer preparation. With embodiment 1.

[0067] (7) Preparation of hole transport layer. With embodiment 1.

[0068] (8) Electrode preparation. Same implementation benefit 1.

[0069] (9) Test, same as Example 1. The obtained photoelectric conversion efficiency parameters are, open circuit volta...

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Abstract

The invention relates to an SnO2 porous structure perovskite photovoltaic cell and a preparation method thereof, which belong to the field of photoelectric materials and devices. An electron-transporting layer of the perovskite photovoltaic cell is a tin oxide compact layer covering above a transparent conducting substrate and a tin oxide porous layer covering above a tin oxide compact layer film. The porous structure SnO2 perovskite porous photovoltaic cell prepared based on a low temperature obtains 12.58 percent of high photoelectric conversion efficiency, which is higher than a plane structure perovskite film photovoltaic cell adopting an SnO2 compact layer as an electron-transporting layer. The oxide SnO2 is acid and alkali resistant, large in band gap width, and low in ultraviolet attenuation as a cell window layer, and has significance on improving the stability of performances of devices; in addition, the preparation method is simple in process, low in cost, and beneficial to scale production, and has wide business application prospect.

Description

technical field [0001] The present invention relates to a kind of SnO 2 A perovskite photovoltaic cell with a porous structure and a preparation method thereof belong to the field of optoelectronic materials and devices. technical background [0002] In the utilization of solar energy, the most widely developed and used photoelectric conversion technology, the corresponding photovoltaic industry has grown at an annual rate of more than 30% in the past 10 years, and even exceeded 50% in some years ( Nat. Photonics , 2008, 2, 284). Silicon solar cells have mature technology, stable performance, and high efficiency, and have always occupied a major share of the photovoltaic industry market. However, their power generation costs are much higher than those of current commercial hydropower, nuclear power, and thermal power ( Science , 1999, 285, 692), and the high energy consumption and environmental problems in the production process are also very prominent. Therefore, althoug...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/032H01L31/18
CPCH01L31/032H01L31/0352H01L31/18H10K30/50Y02E10/549H10K85/50
Inventor 方国家熊良斌柯维俊杨光刘琴秦敏超
Owner WUHAN UNIV
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