Silver phosphate/nitrogen-doped carbon quantum dot/bismuth vanadate Z type photocatalyst, preparation method and application thereof

A technology of carbon quantum dots and photocatalysts, applied in the field of photocatalysis, can solve the problems of weak separation ability of photogenerated carriers, low photocatalytic efficiency, low light absorption efficiency, etc. The effect of high absorption efficiency

Active Publication Date: 2018-06-15
HUNAN UNIV
View PDF2 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The Z-type mechanism semiconductor can not only retain the strong oxidizing valence band and the strong reducing conduction band to obtain high redox performance, but also, due to the construction of the Z-type semiconductor, the photogenerated electron-hole separation rate has been greatly improved. , but binary Z-type photocatalytic materials still have disadvantages such as low light absorption efficiency and low photocatalytic efficiency.
Therefore, if the problems of low light absorption efficiency, weak photogenerated carrier separation ability, and poor photocatalytic activity of bismuth vanadate are comprehensively improved, it is still a technical problem that needs to be solved urgently in this field, and to obtain a photogenerated electron-space Silver phosphate / nitrogen-doped carbon quantum dots / bismuth vanadate Z-type photocatalyst with high hole separation efficiency, high photocatalytic activity and strong redox ability is of great significance for the efficient degradation of pollutants (such as antibiotics) in wastewater

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silver phosphate/nitrogen-doped carbon quantum dot/bismuth vanadate Z type photocatalyst, preparation method and application thereof
  • Silver phosphate/nitrogen-doped carbon quantum dot/bismuth vanadate Z type photocatalyst, preparation method and application thereof
  • Silver phosphate/nitrogen-doped carbon quantum dot/bismuth vanadate Z type photocatalyst, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] A silver phosphate / nitrogen-doped carbon quantum dot / bismuth vanadate Z-type photocatalyst, the silver phosphate / nitrogen-doped carbon quantum dot / bismuth vanadate Z-type photocatalyst uses bismuth vanadate as a carrier, and on the bismuth vanadate carrier Modified with nitrogen-doped carbon quantum dots and silver phosphate.

[0045] In this embodiment, the mass fraction of nitrogen-doped carbon quantum dots in the silver phosphate / nitrogen-doped carbon quantum dots / bismuth vanadate Z-type photocatalyst is 0.24%, the mass fraction of silver phosphate is 1%, and the mass fraction of bismuth vanadate The score is 98.76%.

[0046] In this embodiment, the silver phosphate is nano-spherical; the diameter of the nitrogen-doped carbon quantum dot is less than 5 nm; the bismuth vanadate is irregular block.

[0047] A kind of preparation method of silver phosphate / nitrogen-doped carbon quantum dot / bismuth vanadate Z-type photocatalyst of above-mentioned present embodiment, com...

Embodiment 2

[0064] A silver phosphate / nitrogen-doped carbon quantum dot / bismuth vanadate Z-type photocatalyst, the silver phosphate / nitrogen-doped carbon quantum dot / bismuth vanadate Z-type photocatalyst uses bismuth vanadate as a carrier, and on the bismuth vanadate carrier Modified with nitrogen-doped carbon quantum dots and silver phosphate.

[0065] In this embodiment, the mass fraction of nitrogen-doped carbon quantum dots in the silver phosphate / nitrogen-doped carbon quantum dots / bismuth vanadate Z-type photocatalyst is 0.24%, the mass fraction of silver phosphate is 5%, and the mass fraction of bismuth vanadate The score is 94.76%.

[0066] In this embodiment, the silver phosphate is nano-spherical; the diameter of the nitrogen-doped carbon quantum dot is less than 5 nm; the bismuth vanadate is irregular block.

[0067] A kind of preparation method of silver phosphate / nitrogen-doped carbon quantum dot / bismuth vanadate Z-type photocatalyst of above-mentioned present embodiment, com...

Embodiment 3

[0075] A silver phosphate / nitrogen-doped carbon quantum dot / bismuth vanadate Z-type photocatalyst, the silver phosphate / nitrogen-doped carbon quantum dot / bismuth vanadate Z-type photocatalyst uses bismuth vanadate as a carrier, and on the bismuth vanadate carrier Modified with nitrogen-doped carbon quantum dots and silver phosphate.

[0076] In this embodiment, the mass fraction of nitrogen-doped carbon quantum dots in the silver phosphate / nitrogen-doped carbon quantum dots / bismuth vanadate Z-type photocatalyst is 0.24%, the mass fraction of silver phosphate is 10%, and the mass fraction of bismuth vanadate The score is 89.76%.

[0077] In this embodiment, the silver phosphate is nano-spherical; the diameter of the nitrogen-doped carbon quantum dot is less than 5 nm; the bismuth vanadate is irregular block.

[0078] A kind of preparation method of silver phosphate / nitrogen-doped carbon quantum dot / bismuth vanadate Z-type photocatalyst of above-mentioned present embodiment, co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a silver phosphate / nitrogen-doped carbon quantum dot / bismuth vanadate Z type photocatalyst, a preparation method and application thereof. The Z type photocatalyst adopts bismuth vanadate as the carrier, and the bismuth vanadate is modified with nitrogen-doped carbon quantum dots and silver phosphate. The preparation method includes: preparation of a nitrogen-doped carbon quantum dot modified bismuth vanadium material; and mixing of the nitrogen-doped carbon quantum dot modified bismuth vanadium material with silver nitrate and disodium hydrogen phosphate dodecahydrate in water so as to obtain the Z type photocatalyst. The Z type photocatalyst provided by the invention has the advantages of high light absorption efficiency, high photoinduced electron-cavity separation efficiency, high photocatalytic activity, strong redox ability and the like, can efficiently degrade antibiotic wastewater, also has the advantages of simple application method, high degradation efficiency and good reutilization, and has good practical application prospect. The preparation method provided by the invention has the advantages of simple preparation process, easily controllable operating conditions, simple and easily available raw materials, low preparation cost and the like, and is suitable for continuous and large-scale mass production.

Description

technical field [0001] The invention belongs to the technical field of photocatalysis and relates to a Z-type photocatalyst and its preparation method and application, in particular to a silver phosphate / nitrogen-doped carbon quantum dot / bismuth vanadate Z-type photocatalyst and its preparation method and application. Background technique [0002] Antibiotics are widely used all over the world as an important drug for the treatment of pathogenic bacterial infections. Today, the continuous accumulation of antibiotics in ecosystems has become a persistent pollutant that seriously threatens human health. The application of semiconductor photocatalysis technology to degrade toxic and harmful persistent pollutants such as antibiotics in water is of great significance to solve the problem of water pollution. However, the wide bandgap and low light absorption efficiency of semiconductor photocatalytic materials are the main factors limiting their large-scale applications. Therefo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/198C02F1/30C02F101/30
CPCB01J27/198B01J35/004C02F1/30C02F2101/30C02F2305/10
Inventor 袁兴中张进陈晓红蒋龙波吴志斌曾光明
Owner HUNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products