Preparation method of side incidence type SOI-based Si/SiGe HPT with photonic crystal structure

A photonic crystal, n-type technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems affecting performance and achieve low cost, easy implementation, and efficient absorption
CN112531073AActive Publication Date: 2021-03-19BEIJING UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
BEIJING UNIV OF TECH
Publication Date
2021-03-19

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Abstract

The invention discloses a preparation method of a side-incident SOI-based Si / SiGe HPT with a photonic crystal structure, and belongs to the technical field of semiconductors. The preparation method comprises the following steps: preparing an SOI-based Si / SiGe HPT epitaxial material on an SOI substrate, preparing the photonic crystal structure, etching to form a base region and a collector region table top, performing epitaxy of a passivation layer, etching of an electrode contact hole, and manufacturing a metal electrode. Compared with a traditional Si / SiGe HPT, theside-incident SOI-based Si / SiGe HPT has the advantages that incident light is trapped in the device by utilizing point defect and line defect characteristics of the photonic crystal, so that the light absorption rate of the device is improved, and meanwhile, compared with a vertical incidence mode, the light absorption length of the device can be increased under the condition that the thickness of an absorption layer is notchanged by adopting a mode of light incidence from the side surface; and the light absorptivity of the device is also improved.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for preparing a side-incidence SOI-based Si / SiGe HPT with a photonic crystal structure. Background technique

[0002] With the further development of the information society and the arrival of the era of big data, compared with the traditional electrical interconnection technology, the optical interconnection technology has a great impact on the transmission capacity, communication speed, signal delay, transmission distance and power consumption in the data transmission and processing links. Has many advantages. It has become a consensus to replace electrical interconnection with optical interconnection. Silicon-based optical interconnect technology is considered to be the most promising solution. As one of the core devices of the optical interconnection system, the performance of the photodetector also affects the performance of the entire system. T...

Claims

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