Method and device for preparing Mg-doped ZnO nanowire array

A nanowire array and seed crystal technology, which is applied in the field of preparation of ZnO nanowire arrays, can solve the problems of complex procedures, high cost, and limited application, and achieve the effects of good repeatability, low cost, and simple growth process

Inactive Publication Date: 2011-07-06
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Mg-doped ZnO nanowire arrays are generally prepared by pulsed laser deposition, thermal evaporation, chemical vapor deposition (CVD), etc. These methods are expensive in equipment, complicated in procedure, and costly. higher, which limits its application

Method used

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  • Method and device for preparing Mg-doped ZnO nanowire array
  • Method and device for preparing Mg-doped ZnO nanowire array
  • Method and device for preparing Mg-doped ZnO nanowire array

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Experimental program
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Embodiment 1

[0042] refer to figure 1 , shows a flow chart of a method for preparing a Mg-doped ZnO nanowire array of the present invention, the method specifically comprising:

[0043] Step S101, preparing a PVA aqueous solution with a mass concentration of 5-8%;

[0044] Preferably, the average degree of polymerization of the PVA is 1750±50.

[0045] Step S102, dissolving zinc acetate in the prepared PVA aqueous solution to prepare a seed solution with a zinc ion concentration of 0.001-0.1mol / L;

[0046] A certain amount of PVA (polyvinyl alcohol, Chinese name: polyvinyl alcohol) is dissolved in deionized water to prepare a PVA aqueous solution with a mass concentration of 5-8%, and a certain amount of zinc acetate is added to the PVA aqueous solution to make it The zinc ion concentration is 0.001-0.1mol / L, so as to obtain the seed crystal solution with the zinc ion concentration of 0.001-0.1mol / L.

[0047] Step S103, coating the prepared seed crystal solution on the substrate and the...

example 1

[0064] 1) Weigh 6.003g of PVA and 100mL of deionized water, stir continuously to make it swell, and then fully dissolve it in a water bath at 70°C. After the solution is cooled to room temperature, take 50ml of its supernatant for use.

[0065] 2) Weigh 0.053g of zinc acetate and dissolve it in the prepared PVA solution to prepare a 0.005mol / L seed crystal solution.

[0066] 3) Uniformly coat a layer of seed liquid on the Si substrate by dipping-pulling method, put it into an oven, and dry it at 120° C. for 15 minutes. After this process was repeated 6 times, it was put into a high-temperature furnace at 550°C, sintered for 1.5h and taken out.

[0067] 4) Weigh 1.785g Zn(NO 3 ) 2 ·6H 2 O and 0.841 g of hexamethylenetetramine were stirred and dissolved in 150 ml of deionized water to prepare a growth solution.

[0068] 5) Suspend the Si substrate with the seed crystal in the growth solution with the growth side down, seal the beaker with plastic wrap (the purpose is to prev...

example 2

[0071] 1) Weigh 6.004g of PVA and 100mL of deionized water, stir continuously to make it swell, and then fully dissolve it in a water bath at 70°C. After the solution is cooled to room temperature, take 50ml of its supernatant for use.

[0072] 2) Weigh 0.054g of zinc acetate and dissolve it in the prepared PVA solution to prepare a 0.005mol / L seed solution; prepare a 0.060mol / L magnesium acetate standard solution in a 200ml volumetric flask (actually called magnesium acetate is 2.573 g) Standby.

[0073] 3) Uniformly coat a layer of seed liquid on the Si substrate by pulling and dipping, put it in an oven, and dry it at 120° C. for 15 minutes. After this process was repeated 6 times, it was put into a high-temperature furnace at 550°C, sintered for 1.5h and taken out.

[0074] 4) Measure 10ml of zinc acetate standard solution in a clean beaker, then add 140ml of deionized water. Weigh 1.606g Zn(NO 3 ) 2 ·6H 2 O and 0.841g hexamethylenetetramine were stirred and dissolved...

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Abstract

The invention provides a method and a device for preparing an Mg-doped ZnO nanowire array. The method comprises the following steps of: dissolving zinc acetate in 5 to 8 mass percent aqueous solution of polyvinyl alcohol (PVA) to prepare crystal seed solution with the zinc ion concentration of 0.001 to 0.1mol/L; coating the crystal seed solution on a substrate and drying to ensure that the coating material of the substrate is the PVA and the zinc acetate; performing heat treatment to ensure that the coating material of the substrate is zinc oxide; preparing 0.012 to 0.1mol/L standard aqueous solution of magnesium salt; adding the standard aqueous solution, zinc nitrate and hexamethylenetetramine into deionized water to prepare growth solution with the total metal cation concentration of 0.01 to 0.04mol/L; and suspending the substrate subjected to heat treatment in the growth solution, and growing in an 85 to 95 DEG C constant-temperature water bath for more than 2 hours to obtain the nanowire array. Therefore, the Mg-doped ZnO nanowire array can be grown at a low temperature, the cost of the used raw materials is low, and the production process is simple and has high repeatability.

Description

technical field [0001] The invention relates to the technical field of preparation of oxide semiconductor nano-arrays, in particular to a method and device for preparing a Mg-doped ZnO nano-wire array. Background technique [0002] ZnO is a direct wide-bandgap semiconductor with a bandgap width of 3.37eV at room temperature and an exciton binding energy of about 60meV, enabling exciton emission at room temperature. Nanostructured ZnO, especially ZnO nanowire arrays, can be widely used in solar cells (Applied Physics Letters 96 (2010) 073115), sensors (Nanotechnology 21 (2010) 365502), near-ultraviolet light-emitting diodes due to their excellent photoelectric properties. (Advanced Materials 22(2010)4749), ultraviolet light detectors (Applied Physics Letters 96(2010)053102), etc. By doping metal ions such as Cd and Mg, the energy band of ZnO can be adjusted, and then its luminescent characteristics can be changed. It has application prospects and scientific research value in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B7/00
Inventor 李祥王斌鉴程兴旺刘颖
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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