YAlN/GaN high-electron-mobility transistor and manufacturing method thereof

A high electron mobility, transistor technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the high-density dislocation defects of heterogeneous epitaxial GaN materials, shorten the length of the device gate, increase the operating frequency, and affect the device Problems such as current and power output characteristics, to achieve the effect of improving device current and power output characteristics, improving device current and power characteristics, and increasing carrier concentration
CN112736131AActive Publication Date: 2021-04-30XIDIAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XIDIAN UNIV
Publication Date
2021-04-30

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Abstract

The invention relates to a YAlN / GaN high-electron-mobility transistor and a manufacturing method thereof, and mainly solves the problems of low working frequency and high material dislocation density of an existing nitride microwave power device. The transistor comprises a substrate, a nucleating layer, a GaN channel layer, an AlN insertion layer and a YAlN barrier layer from bottom to top, wherein an InAlN cap layer is arranged between the insertion layer and the barrier layer; a barrier protection layer and an insulated gate dielectric layer are sequentially arranged at the upper part of the barrier layer, and ohmic contact regions for manufacturing a source electrode and a drain electrode are arranged on two sides from the InAlN cap layer to the insulated gate dielectric layer. A nucleating layer, a GaN channel layer, an AlN insertion layer and an InAlN cap layer in the structure are grown by adopting MOCVD; and the YAlN barrier layer and the barrier protection layer are grown by adopting MBE. The material is high in polarization intensity, high in device working frequency, high in reliability, simple in manufacturing process and high in consistency, and can be used for a high-frequency microwave power amplifier and a microwave millimeter wave integrated circuit.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a transistor with high electron mobility, which can be used for making high-frequency microwave power amplifiers and microwave millimeter-wave monolithic integrated circuits. Background technique

[0002] Group III nitride semiconductor materials have excellent properties such as wide bandgap, high critical breakdown field strength, and high electron saturation drift velocity. There are unique advantages in application. Since the first GaN high electron mobility transistor (HEMT) prototype device was successfully prepared in 1993, significant progress has been made in device performance and reliability, and it has gradually entered the field of commercial application from experimental research. With the deepening of research and the advancement of material epitaxy technology and device manufacturing process, the GaN device structure has been continuousl...

Claims

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