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Graphene sapphire substrate suitable for epitaxial growth of III-nitride

A sapphire substrate and graphene technology, applied in the field of materials, can solve the problems of low yield rate, cumbersome operation, lack of dangling bonds in graphene, etc., and achieve the effects of alleviating thermal conductivity, simplifying the growth process, and efficient preparation

Inactive Publication Date: 2018-02-13
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the surface of graphene lacks dangling bonds, and atoms are not suitable for nucleation and nucleation, which limits the efficient nucleation and growth of group III nitrides; and the preparation process of graphene films is mainly on copper foil substrates, which need to be transferred to sapphire and other substrates. It can be used above the bottom. This process is cumbersome to operate and the yield rate is low. Therefore, there are still great difficulties in the epitaxy of high-quality III-nitride materials on graphene films.

Method used

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  • Graphene sapphire substrate suitable for epitaxial growth of III-nitride
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  • Graphene sapphire substrate suitable for epitaxial growth of III-nitride

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Embodiment 1

[0068] A method for preparing a novel graphene-sapphire substrate suitable for epitaxial growth of group III nitrides, the steps are as follows:

[0069] (1) Cleaning of the sapphire substrate: The sapphire substrate was ultrasonically cleaned with ultrapure water, isopropanol, and acetone for 5 minutes respectively, and dried with nitrogen gas after cleaning, wherein the ultrasonic power was 90W.

[0070] (2) at high temperature, carry out the chemical vapor deposition of graphene thin film to sapphire substrate: the clean sapphire glass substrate that step (1) obtains is put into APCVD reaction cavity, Ar and H 2 The gas flow meters were set to 500sccm and 100sccm respectively. After the gas scrubbing, the furnace body was heated to 1050°C, and Ar and H were kept during the heating process. 2 The flow rate does not change. After the furnace temperature rises to 1050°C and stabilizes for 15 minutes, turn on the CH 4 The flow meter was set at 20 sccm and the growth time was ...

Embodiment 2

[0083] A method for preparing a novel graphene sapphire substrate for epitaxial growth of group III nitrides, the steps are the same as in Example 1, the difference is that LPCVD is used instead of APCVD, and the deposition environment is a low-pressure environment; the deposition temperature is 1080 ° C; the carrier gas It is a mixed gas composed of argon and hydrogen, wherein the flow ratio of argon to hydrogen is 5:1, specifically, the flow rate of argon is 500 sccm, and the flow rate of hydrogen is 100 sccm; the carbon source is ethanol vapor, and the flow rate is set to 500 sccm , the partial pressure is 250Pa; the deposition time is 1h, and a new graphene sapphire substrate suitable for the epitaxial growth of group III nitrides is also obtained.

Embodiment 3

[0085] In the PECVD, the deposition environment is a low-pressure environment with a pressure of 100 Pa; the deposition temperature is 600° C.; the carbon source is methane, the flow rate is 18 sccm, the power of the plasma generator is 120 W, and the deposition time is 1 h.

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Abstract

The invention discloses a graphene sapphire substrate suitable for epitaxial growth of III-nitride. A preparation method of the substrate comprises the following steps of performing graphene chemicalvapor deposition on the sapphire substrate; performing plasma treatment on a system after the chemical vapor deposition, wherein the plasma treatment process specifically comprises oxygen plasma treatment, nitrogen plasma treatment or argon plasma treatment. The preparation method has the advantages that an III-nitride thin film can be quickly and efficiently prepared, and the preparation cost ofthe III-nitride thin film is greatly reduced; the obtained III-nitride can be further processed into LED (light emitting diode) devices, and the problem of overheat in a use process can be solved forthe prepared LED chip because of very good heat conductivity of the graphene.

Description

technical field [0001] The invention belongs to the field of materials, and in particular relates to a graphene sapphire substrate suitable for epitaxial growth of group III nitrides. Background technique [0002] Group III nitrides include gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN) and their alloys and other semiconductors with direct band gaps. Due to the adjustable band gap and theoretically the emission band can cover the entire visible light region, as well as its stable chemical properties, strong radiation resistance, and high breakdown voltage, it is widely used in light-emitting diodes, lasers, and high-speed electronic devices. At present, the traditional preparation process mainly uses metal organic chemical vapor deposition (Metal organic chemical vapor deposition, MOCVD) method to prepare by two-step deposition on the sapphire substrate, and the process takes a long time. Moreover, the traditional sapphire substrate has poor thermal con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/203H01L21/205H01L33/00
CPCH01L21/0237H01L21/02376H01L21/02414H01L21/02428H01L21/0254H01L21/0262H01L21/02631H01L33/007
Inventor 刘忠范陈召龙高鹏
Owner PEKING UNIV
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