Plane indium and gallium infrared focusing plane detector and its making method
An infrared focal plane, indium gallium arsenic technology, applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of pn junction difficulty, p electrode system process complexity, photosensitive element expansion, etc., to achieve Enhanced thermal stability, easy process, precise control effect
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[0023] Below in conjunction with accompanying drawing and embodiment the specific embodiment of the present invention is described in further detail:
[0024] As shown in Figure 3a, the structure of the epitaxial wafer used in this embodiment is: n-type InP substrate 1 with a thickness of 650 μm, and a carrier concentration of 3-4×10 18 cm -3 ; Use MOCVD technology to sequentially grow n-type InP layer 2 with a thickness of 0.5 μm on the substrate 1, with a carrier concentration of 2-3×10 18 cm -3 ; In with a thickness of 2.5 μm 0.53 Ga 0.47 As intrinsic absorption layer 3, carrier concentration 5-6×10 16 cm -3 ; An n-type InP cap layer 4 with a thickness of 1 μm and a carrier concentration greater than 5×10 16 cm -3 . Then ultrasonically clean the epitaxial wafer with chloroform, ether, acetone, and ethanol in sequence, and dry it with nitrogen gas; photolithography of positive resist (thick resist), and drying at 65°C for 20 minutes after photolithography;
[0025] ...
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