Preparation method of silica-based CdZnTe film ultraviolet light detector
A detector and ultraviolet light technology, applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., to achieve the effect of simple growth process, low cost, and high feasibility of batch growth
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0024] The preparation process and steps of this embodiment are as follows:
[0025] (a) Preparation of CdZnTe single crystal sublimation source: According to the known prior art, put high-purity Cd, Zn, Te into a quartz tube, and use moving heating method to grow under high vacuum. Uniform CdZnTe single crystal, wherein the molar content of zinc is 5%, the molar content of Cd is 43%, and the molar content of Te is 52%, and the grown crystal slice is used as the sublimation source;
[0026] (b) Substrate pretreatment: Boron-doped (111) P-type silicon was used as the substrate, and the substrate was ultrasonically cleaned with deionized water, acetone and ethanol for 15 minutes to remove impurities and organic substances on the surface, and dried Put it into the near space sublimation reaction chamber;
[0027] (c) CdZnTe thin film growth process: Turn on the mechanical pump to evacuate the sublimation chamber to below 3Pa, then turn off the mechanical pump, pass in argon ...
Embodiment 2
[0032] The preparation process and steps of this embodiment are as follows:
[0033] (a) Preparation of CdZnTe single crystal sublimation source: According to the known prior art, put high-purity Cd, Zn, Te into a quartz tube, and use moving heating method to grow under high vacuum. Uniform CdZnTe single crystal, wherein the molar content of zinc is 5%, the molar content of Cd is 43%, and the molar content of Te is 52%, and the grown crystal slice is used as the sublimation source;
[0034] (b) Substrate pretreatment: Boron-doped (111) P-type silicon was used as the substrate, and the substrate was ultrasonically cleaned with deionized water, acetone and ethanol for 15 minutes to remove impurities and organic substances on the surface, and dried Put into the close space sublimation reaction chamber.
[0035](c) CdZnTe film growth process: Turn on the mechanical pump to evacuate the sublimation chamber to below 3Pa, then turn off the mechanical pump, feed argon gas to adju...
Embodiment 3
[0039] The preparation process and steps of this embodiment are as follows:
[0040] (a) Preparation of CdZnTe single crystal sublimation source: According to the known prior art, put high-purity Cd, Zn, Te into a quartz tube, and use moving heating method to grow under high vacuum. Uniform CdZnTe single crystal, wherein the molar content of zinc is 5%, the molar content of Cd is 43%, and the molar content of Te is 52%, and the grown crystal slice is used as the sublimation source;
[0041] (b) Substrate pretreatment: Boron-doped (111) P-type silicon was used as the substrate, and the substrate was ultrasonically cleaned with deionized water, acetone and ethanol for 15 minutes to remove impurities and organic substances on the surface, and dried Put into the close space sublimation reaction chamber.
[0042] (c) CdZnTe film growth process: turn on the mechanical pump to evacuate, pump the air pressure in the sublimation chamber to below 3Pa, then turn off the mechanical p...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com