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Device and process for preparing aluminum nitride crystals by adopting spontaneous crystal seed method

An aluminum nitride, spontaneous crystallization technology, applied in the direction of self-solidification, crystal growth, single crystal growth, etc., can solve the problem of difficult to obtain large-scale, high-quality single crystal, achieve energy saving, simple production process, The effect of reducing pollution

Inactive Publication Date: 2013-05-15
SHENZHEN UNIV
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Problems solved by technology

In the absence of suitable single crystal materials as substrates and intrinsic aluminum nitride single crystals as seeds, if new preparation methods are not used to change the crystal morphology of aluminum nitride on tungsten substrates, only in this A uniformly distributed aluminum nitride polycrystalline layer is obtained on the substrate, and it is difficult to obtain large-size, high-quality single crystals

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  • Device and process for preparing aluminum nitride crystals by adopting spontaneous crystal seed method
  • Device and process for preparing aluminum nitride crystals by adopting spontaneous crystal seed method
  • Device and process for preparing aluminum nitride crystals by adopting spontaneous crystal seed method

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Embodiment Construction

[0012] The invention provides a device and a process for preparing aluminum nitride crystals by a spontaneous seed crystal method. An example of preparing aluminum nitride crystals according to the present invention will be given below to further illustrate the present invention. This embodiment includes the following working stages. (1), using such as figure 1 The shown preparation device comprises an induction heating coil (1), an insulating layer (2), a crucible device and a crucible lifting device (7), wherein the crucible device is as figure 2 As shown, the crucible device is composed of a cover sheet (3), a crucible cover (4) and a crucible body (5), all of which are made of tungsten. The size of the crucible is Φ 外 45×50 mm, Φ 内 36×45 mm, the size of the crucible cover is Φ45×0.5 mm, there is a hole with a diameter of 1 mm in the center of the crucible cover, the size of the cover is Φ5×0.5 mm and placed directly above the hole, the aluminum nitride after sintering...

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Abstract

The invention belongs to the field of crystal preparation, and in particular relates to a device for preparing aluminum nitride crystals and a corresponding process. The invention provides the device and the process for preparing aluminum nitride crystals by adopting a spontaneous crystal seed method. The device comprises an inductive heating coil, an insulating layer, a crucible device and a crucible lifting device. The crucible device consists of a crucible body, a crucible cover and a cover sheet. A hole which is 1-2mm in diameter is formed in the crucible cover, the cover sheet is located above the crucible cover and completely shields the hole, and the area of the cover sheet is between those of the hole and the crucible cover. The preparation process comprises the two steps of: (1) obtaining aluminum nitride single crystals through spontaneous crystallization at the hole to be used as the crystal seeds due to limit of anisotropic crystalline characteristic of aluminum nitride and geometric dimension of the hole at lower temperature; and (2) obtaining large-dimensional aluminum nitride crystals by weakening the anisotropic crystalline characteristic of aluminum nitride at high temperature and meanwhile slowly adjusting the position of the crucible by lifting through the lifting device.

Description

technical field [0001] The invention belongs to the field of crystal preparation, and in particular relates to a device for preparing aluminum nitride crystals and a corresponding process. Background technique [0002] Aluminum nitride crystal is one of the typical representatives of the third-generation semiconductor materials (aluminum nitride, gallium nitride, silicon carbide, zinc oxide, diamond, etc.), and it has the widest direct band gap and forbidden band width among these materials ( 6.2 electron volts); it has excellent optical, electrical, acoustic and mechanical properties at the same time, and has shown extremely broad application prospects and inestimable huge economic benefits. The sublimation method (or physical vapor transport method) is currently the most commonly used method for growing aluminum nitride crystals. The basic process is that the aluminum nitride material is decomposed and sublimated at high temperature, and then recrystallized in the low temp...

Claims

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Application Information

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IPC IPC(8): C30B29/38C30B11/00
Inventor 武红磊郑瑞生
Owner SHENZHEN UNIV
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