Device and process for preparing aluminum nitride crystals by adopting spontaneous crystal seed method

An aluminum nitride, spontaneous crystallization technology, applied in the direction of self-solidification, crystal growth, single crystal growth, etc., can solve the problem of difficult to obtain large-scale, high-quality single crystal, achieve energy saving, simple production process, The effect of reducing pollution

Inactive Publication Date: 2013-05-15
SHENZHEN UNIV
View PDF1 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the absence of suitable single crystal materials as substrates and intrinsic aluminum nitride single crystals as seeds, if new preparation methods are not used to change the crystal morphology of aluminum

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and process for preparing aluminum nitride crystals by adopting spontaneous crystal seed method
  • Device and process for preparing aluminum nitride crystals by adopting spontaneous crystal seed method
  • Device and process for preparing aluminum nitride crystals by adopting spontaneous crystal seed method

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0012] The invention provides a device and process for preparing aluminum nitride crystals by a spontaneous seed crystal method. Hereinafter, an example of using the present invention to prepare aluminum nitride crystal is given to further illustrate the present invention. This embodiment includes the following working stages. (1) Use such as figure 1 The preparation device shown includes an induction heating coil (1), an insulation layer (2), a crucible device and a crucible lifting device (7), wherein the crucible device is such as figure 2 As shown, the crucible device is composed of a cover piece (3), a crucible cover (4) and a crucible body (5), and the material is all tungsten. The size of the crucible is Φ outer 45×50 mm, Φ Inside 36×45mm, the size of the crucible cover is Φ45×0.5mm, the center of the crucible cover has a hole with a diameter of 1mm, the size of the cover piece is Φ5×0.5mm and placed directly above the hole, sintered aluminum nitride The material (6...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the field of crystal preparation, and in particular relates to a device for preparing aluminum nitride crystals and a corresponding process. The invention provides the device and the process for preparing aluminum nitride crystals by adopting a spontaneous crystal seed method. The device comprises an inductive heating coil, an insulating layer, a crucible device and a crucible lifting device. The crucible device consists of a crucible body, a crucible cover and a cover sheet. A hole which is 1-2mm in diameter is formed in the crucible cover, the cover sheet is located above the crucible cover and completely shields the hole, and the area of the cover sheet is between those of the hole and the crucible cover. The preparation process comprises the two steps of: (1) obtaining aluminum nitride single crystals through spontaneous crystallization at the hole to be used as the crystal seeds due to limit of anisotropic crystalline characteristic of aluminum nitride and geometric dimension of the hole at lower temperature; and (2) obtaining large-dimensional aluminum nitride crystals by weakening the anisotropic crystalline characteristic of aluminum nitride at high temperature and meanwhile slowly adjusting the position of the crucible by lifting through the lifting device.

Description

technical field [0001] The invention belongs to the field of crystal preparation, and in particular relates to a device for preparing aluminum nitride crystals and a corresponding process. Background technique [0002] Aluminum nitride crystal is one of the typical representatives of the third-generation semiconductor materials (aluminum nitride, gallium nitride, silicon carbide, zinc oxide, diamond, etc.), and it has the widest direct band gap and forbidden band width among these materials ( 6.2 electron volts); it has excellent optical, electrical, acoustic and mechanical properties at the same time, and has shown extremely broad application prospects and inestimable huge economic benefits. The sublimation method (or physical vapor transport method) is currently the most commonly used method for growing aluminum nitride crystals. The basic process is that the aluminum nitride material is decomposed and sublimated at high temperature, and then recrystallized in the low temp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B29/38C30B11/00
Inventor 武红磊郑瑞生
Owner SHENZHEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap