Self-separation method for preparing self-supporting GaN substrate

Abstract

The invention discloses a self-separation method for preparing a self-supporting GaN substrate, which includes steps of: 1) on a sapphire substrate, growing a uniformly-distributed Ga2O3 film, whereinthickness range of the film is 0.1-1 [mu]m; 2) in an ammonia atmosphere, performing complete nitridation to the film, thus forming a porous GaN film in latticed distribution; 3) on the porous GaN film, performing halide vapor phase epitaxy growth of a GaN thick film, thus forming a low stress and high quality GaN thick film; 4) after the epitaxy is completed, cooling the material to room temperature, so that the epitaxy GaN thick film is automatically separated from the sapphire substrate, thus obtaining the self-supporting GaN substrate.

Description

Technical field [0001] The invention relates to a self-separation method for preparing a self-supporting GaN substrate, and belongs to the technical field of semiconductor materials. Background technique [0002] Group III-V nitride materials (also known as GaN-based materials) based on GaN, InGaN, and AlGaN alloy materials are new semiconductor materials that have received great attention internationally in recent years. GaN-based material is a direct band gap wide bandgap semiconductor material, with a continuously variable direct band gap between 1.9-6.2eV, excellent physical and chemical stability, high saturated electron drift speed, high breakdown field strength and high thermal conductivity It has important applications in the preparation of short-wavelength semiconductor optoelectronic devices and high-frequency, high-voltage, and high-temperature microelectronic devices. It can be used to manufacture light-emitting devices such as blue, violet, and ultraviolet bands, det...

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