30results about How to "Achieve large area growth" patented technology

The invention relates to a preparation method of a spongy graphene-based stretchable gas sensor. Firstly, a spongy graphene material is prepared on nickel foam with a chemical vapor deposition method, the prepared graphene / nickel foam is immersed in an etching solution and slowly reacts, accordingly, most of nickel metal is replaced chemically, the nickel metal is turned into small nickel particles, a spongy graphene / nickel particle mixing structure is fished out of the etching solution with a seal type fishing method and then is cleaned and dried, a prestretching elastic substrate is slowly recovered to the original length or area, electrodes are prepared at two ends of the graphene / nickel particle mixing structure, and the stretchable gas sensor is obtained. The gas sensor has high conductivity and good gas sensitive characteristic, is low in cost and controllable and can realize large-area growth.

The invention discloses a low-temperature direct preparation method of graphene under double-temperature-zone control, and a double-temperature-zone tube furnace. The method comprises the steps of dividing a vacuum reaction furnace into a high-temperature zone and a low-temperature zone, putting transition metal into the high-temperature zone, directly putting substrate material into the low-temperature zone, vacuumizing, injecting hydrogen gas into the vacuum reaction furnace, heating the low-temperature zone to 100-1,000 DEG C, heating the high-temperature zone to 1,000-1,100 DEG C, introducing carbon source into the vacuum reaction furnace, cracking the carbon source in the high-temperature zone, and performing chemical vapor deposition (CVD) for 5-180 min in the low-temperature zone while keeping constant hydrogen gas flow, to obtain graphene directly deposited on the substrate. The preparation method has the advantages of simple growth process, no need of catalysis, low growth temperature of 100-1,000 DEG C, no restriction on substrate material, and large-area growth of graphene. The grown graphene has low defect peak, high crystal quality, excellent light transmittance and electrical conductivity.

The invention relates to a process for preparing a stretchable supercapacitor based on a highly conductive graphene / nickel particle mixed structure. Firstly, a chemical vapor deposition method is used for preparing spongy graphene material on a nickel foam, and the prepared graphene / nickel foam are immersed in an etching solution for slow reaction so that most of the nickel metal can be chemically displaced into various small nickel particles; secondly, the spongy graphene / nickel particle mixed structure is fished out from the etching solution by using a seal-type fishing method, cleaned and dried, and a pre-stretched elastic substrate slowly returns back to the original length or area; and thirdly, the prepared stretchable graphene / nickel particle mixed structure is used as electrode material, and an all-solid-state stretchable supercapacitor is prepared according to the elastomer / electrode / solid electrolyte / electrode / elastomer structure. According to the invention, the capacitance of a conventional capacitor is increased, contact resistance is reduced, the stretching stability, frequency and performance are excellent, the cost is low, and the method is controllable and suitable for mass production.

The invention discloses a carbon nano tube / porous ceramic hollow fiber composite ultrafiltration membrane as well as a preparation method and application thereof. The preparation method comprises the following steps: carrying out ultrasonic vibration on a hollow fiber ceramic membrane used as a carrier with absolute ethyl alcohol and washing the hollow fiber ceramic membrane with de-ionized water until the hollow fiber ceramic membrane is neutral; drying to obtain the treated carrier; coating a Ni(NO3)2 solution onto the treated carrier by using an impregnation coating method; after drying, putting the carrier into a muffle furnace to be roasted to obtain a hollow fiber membrane loaded with a nickel oxide catalyst; putting the hollow fiber membrane into a quartz reaction tube and introducing N2 and H2 into the quartz reaction tube to reduce a catalyst; and switching into hydrogen gas and raising the temperature, switching a gas flow into pure methane gas and carrying out a high-temperature reaction to obtain the product. The carbon nano tube / porous ceramic hollow fiber composite ultrafiltration membrane can be used for separating liquid-water emulsion liquid and bacteria, and has a very good effect of removing PM1 fine particles in atmosphere.

The invention relates to a method for preparing a high-conductivity stretchable sponge graphene-based electrode material. A chemical vapor deposition method is adopted to grow sponge graphene on a foam metal substrate; then, the prepared graphene / foam metal is soaked into an etching solution, and the concentration and the temperature of the etching solution are controlled so as to obtain a graphene / metal particle mixing structure; then, the prepared graphene / foam metal is fished out of the etching solution to be cleaned; pre-stretching 3M stretchable rubber tape is used for covering the surface of graphene, and the graphene is fished out and naturally dried; a pre-stretching elastic substrate covering a flexible graphene / metal particle mixing structure slowly recovers to the original length or area, so that the self-assembling crumpled stretchable graphene / metal particle mixing structure electrode material is prepared. The electrode material is excellent in stretching performance, good in stability, high in conductivity, low and controllable in cost, and capable of being produced in a large-scale manner, and has the great application value.

The invention discloses a molybdenum disulfide / gold nanoparticle mixed structure biosensor material and a preparation method thereof. The molybdenum disulfide / gold nanoparticle mixed structure biosensor material comprises a glass fiber paper substrate, two-dimensional molybdenum disulfide adhered to the glass fiber paper substrate and gold nanoparticles adhered to the two-dimensional molybdenum disulfide. Molybdenum disulfide growth temperature is accurately controlled. Grown molybdenum disulfide has low defect peak and high crystalline quality. Grown molybdenum disulfide size is only limited by CVD cavity, and large-area growth of molybdenum disulfide can be realized. The molybdenum disulfide / metal particle mixed structure with grown metal particles has extremely high chemisorption and physical strengthening mechanisms. By the etching method for growth of gold particles, etching time can be controlled to accurately control size of the gold particles. In addition, the gold particles can uniformly grow on the whole material, which is beneficial to detection of biomolecules. The prepared biosensor can simultaneously realize separation and detection of biomolecules. The method is simple and controllable, is low-cost, and has high application value.

The invention relates to a method for preparing ternary-component AlxGaI-xN nanocone, realizing control in the full-ingredient range (x is larger than 0 and smaller than 1). The method for preparing the ternary-component AlxGaI-xN nanocone comprises the following steps of: making anhydrous GaCl3 as a gallium source and anhydrous AlCl3 as an aluminum source with a nitrogen source by adopting a chemical vapor deposition method under the condition that the evaporation temperatures of GaCl3 and AlCl3 are respectively 70-90 DEG C and 130-150 DEG C to generate single-phase AlxGaI-xN nanocone, wherein x is larger than 0 and smaller than 1, the preferred nitrogen source is NH3, and the deposition temperature is 650-800 DEG C. In the invention, the vapor partial pressure of reaction precursors GaCl3 and AlCl3 is finely controlled in a tube furnace of a three-segment temperature area to obtain a one-dimensional nano material with a single-crystal structure and uniformly distributed components, and the atom ratio of Al / Ga can be controlled in the full-ingredient range (x is larger than 0 and smaller than 1) by changing growth conditions.

The invention relates to a preparation method of a high-sensitivity stretchable biosensor for in-situ detection. The preparation method includes: adopting a chemical vapor deposition method to grow molybdenum disulfide on a three-dimensional substrate; soaking prepared molybdenum disulfide / foamed metal in an etching solution, removing a metal substrate by controlling concentration and temperature of the etching solution to obtain a stretchable molybdenum disulfide / metal particle mixed structure, fishing out the mixed structure, cleaning, using a pre-stretched 3M stretchable adhesive tape to cover the surface of the stretchable molybdenum disulfide / metal particle mixed structure to fish the mixed structure out, naturally airing, restoring to original length or area, soaking the mixed structure in a mixed solution of stannous chloride, silver nitrate, ascorbic acid and silver nitrate to enable the same to grow silver particles so as to prepare the high-sensitivity stretchable biosensor. The biosensor is excellent in performance, high in stability and sensitivity, low in cost, controllable and supportive of large-scale production and has great application value.

The invention discloses a bent optical fiber ATR (attenuated total reflectance) glucose sensor reinforced on the basis of silver nanoparticles. The bent optical fiber ATR glucose sensor comprises an optical fiber. The optical fiber comprises an optical fiber core and optical fiber cladding, the optical fiber cladding wraps the outer periphery of the optical fiber core, optical fiber connectors which are used for being connected with external components are respectively connected to two ends of the optical fiber, a bent sensitive area is formed in the middle of the optical fiber, and the silver nanoparticles grow on the outer surface of the portion, which is positioned in the sensitive area, of the optical fiber. The optical fiber is a multi-mode optical fiber. The optical fiber core and the optical fiber cladding are made of silver halide materials, and light with the wavelength ranging from 4 micrometers to 18 micrometers can be transmitted through the optical fiber core and the optical fiber cladding. The portion, which is positioned in the sensitive area, of the optical fiber is of a U-shaped structure or a single-ring structure or a structure with two or more rings. The diameter of each silver nanoparticle ranges from 20 nanometers to 100 nanometers. The bent optical fiber ATR glucose sensor has the advantages that the bent optical fiber ATR glucose sensor is simple in structure and operation, small in size, easy to process and low in cost, and can be subcutaneously implanted into a human body, so that the blood glucose concentration of the human body can be continuously monitored in an online manner and can be directly measured in vivo, and the requirement on continuously monitoring the blood glucose concentration of the human body in real time can be met.

The invention discloses a method of growing a graphene film on an insulating substrate in the absence of a catalyst. The method comprises following steps: preparing a quartz tube, wherein two ends ofthe quartz tube is a raw material end and a substrate end; placing an insulating substrate in the substrate end of the quartz tube, placing a raw material in the raw material end of the quartz tube; vacuumizing the quartz tube, then sealing the quartz tube until the pressure in the quartz tube reaches 10<-4> to 10 <-6> Pa, wherein the raw material is polyethylene or polypropylene; heating the rawmaterial end and the substrate end of the quartz tube for 0.5 to 1 hour, and then cooling the quartz tube in a furnace to 20 to 25 DEG C so as to form a graphene film on the insulating substrate, wherein the heating temperature of the raw material end is 1000 to 1150 DEG C, and the heating temperature of the substrate end is 200 to 900 DEG C. The provided method can prepare a graphene film that covers an insulating substrate with an area of 1 cm * 2 cm or larger according to the needs.

The invention relates to a growing device of gas inner circulation type hot wire CVD diamond films. The device comprises a sealed vacuum chamber provided with a reaction chamber inside. A fan is arranged at the top end of the inner wall of the reaction chamber, and a hot wire array composed of a plurality of parallel vertical tungsten wires is arranged below the fan; two ends of the hot wire array are connected with direct current, a substrate plate is arranged below the hot wire array, and a thermocouple is arranged on the substrate plate; an air inlet is arranged on the outer wall of the vacuum chamber on the upper side portion of the fan; and an air pumping opening is arranged on the lower side portion of the outer wall of the vacuum cavity. According to the growing device, large area and high speed growth of diamond films can be achieved, and consumption of hydrogen is reduced.

The invention relates to a rare earth doped molybdenum sulfide monomolecular layer film and a preparation method thereof. The preparation method comprises the following steps of putting sulfur powderon a quartz tube by using a single warm area tubular growth furnace by means of a chemical vapor deposition method; by taking a low-melting-point rare earth compound as a synthesized precursor, mixingthe low-melting-point rare earth compound and MoO in a combustion boat and blending into sodium chloride; introducing carrier gas into the furnace; heating the growth furnace to 600 DED C from room temperature within 18-22 min; then heating the growth furnace to 720-780 DEG C within 5-10 min; and keeping the temperature for 5-10 min to obtain the rare earth doped molybdenum sulfide monomolecularlayer film. By segmented temperature control growth, controlled doping is achieved while the dosage of the sulfur power can be reduced. A monomolecular layer of the rare earth doped molybdenum sulfidefilm grows in a large area by repeated experiments to control the reaction conditions.

The invention discloses a method for directly preparing graphene on a SiO2 / Si substrate. The method comprises the following steps of: preparing graphene on a transitional metal film of the transitional metal SiO2 / Si substrate by using an ion implantation method; and then sequentially removing the graphene and the transitional metal film from the surface of the transitional metal film, thus obtaining the graphene on the SiO2 / Si substrate. The method is simple and convenient and can be used for directly obtaining the graphene film with low defect level and high quality on the SiO2 / Si substrate.

The invention discloses a double-layer film actuator and a preparation method thereof, and belongs to the field of functional materials and soft robots. A layer of regularly arranged metal hydroxide directionally grows on a polymer film substrate through a solid-state alkali self-sacrificing method to form a double-layer structure comprising a polymer film and transition metal hydroxide. The preparation method is simple and low in cost, and large-scale preparation can be realized. Rapid, remarkable and stable deformation capacity is achieved under the conditions of humidity change, heating, infrared light and the like by means of the difference of humidity response of the double-layer thin film, and moving and object grabbing can be achieved through deformation control. Therefore, the method has important application value in the fields of flexible switches, artificial muscles, soft robots, environmental monitoring and the like.

The invention relates to a preparation method of an all-inorganic lead-free metal halide perovskite nanowire and a high-performance infrared detection application of the nanowire. The nanowire is grown by a three-temperature-zone gas phase method, and the three temperature zones include the upstream source zone, the midstream source zone and the growth zone. A SnX2 source material is placed in theupstream source zone for providing a Sn source material; a CsX source material is placed in the midstream source zone for providing a CsX source material; a freshly stripped fluorophlogopite substrate is placed in the growth zone for growing the nanowire. A metal mask plate and electron beam evaporation are adopted for positioning and vapor deposition of metal electrodes to construct an infrareddetector. By means of the method, the new all-inorganic lead-free metal halide perovskite nanowire material which is free of toxicity, free of lead and environmentally friendly can be prepared, the forbidden band width is made continuously adjustable through energy band engineering, and effective response to near-infrared light is successfully realized. In the adopted chemical vapor deposition method, conditions are simple, and the cost is low. By adopting the electrode positioning method with the metal mask plate to prepare the infrared detector, the operation is convenient.

The invention discloses a manufacturing method for an upconversion luminescent material. The manufacturing method comprises the following formation steps: step 1, providing a multitarget magnetron sputtering device; step 2, mounting target materials which are selected according to to-be-formed rare earth doped sulfur oxide and comprise a matrix rare earth oxide target and a matrix rare earth sulfide target corresponding to a sulfur oxide matrix material of rare earth doped sulfur oxide, and a doped rare earth target corresponding to a rare earth doped material of the rare earth doped sulfur oxide; step 3, placing a substrate onto a substrate seat of a co-sputtering reaction chamber; step 4, vacuumizing the co-sputtering reaction chamber; and step 5, introducing sputtering gas, and carryingout a sputtering process with a substrate temperature in a range of a room temperature to 400 DEG C so as to form the rare earth doped sulfur oxide on the surface of the substrate. The manufacturingmethod provided by the invention can realize large-area growth of a material at a low temperature, is compatible with a microelectronic technology, has simple process and low cost, and can effectivelycombine with the preparation process of solar cells.

The invention discloses a biosensor of a graphene / copper particle mixing structure and a preparation method thereof. According to the biosensor, a layered structure formed by mixing two-dimensional graphene and copper nanoparticles is attached to the upper surface of glass fiber paper. The preparation method comprises the following steps: coating a copper film on the glass fiber paper by adopting a vacuum coating method, depositing the produced graphene on the copper film by adopting chemical vapor deposition, and treating the copper film into a copper nanoparticle layer, so that the copper film forms the layered structure formed by mixing the two-dimensional graphene and copper nanoparticles.

The invention relates to an inner-diameter-controllable porous mono-crystalline gallium nitride micro / nano-tube array and a preparation method thereof. The preparation method comprises the following steps: enabling a gallium source to be in contact with a nitrogen source at a reducing atmosphere, reacting to generate gallium nitride gaseous molecules, and performing epitaxial growth on the gallium nitride gaseous molecules by using a zinc oxide micro / nano-wire array as a template to prepare the inner-diameter-controllable porous mono-crystalline gallium nitride micro / nano-tube array, wherein reaction conditions of the epitaxial growth are as follows: the reaction temperature is 850-1050 DEG C, and the reaction time takes 0.5-5 hours. The gallium nitride micro / nano-tube array disclosed by the invention is special in morphology, uniform in size and controllable in inner diameter, and large-area growth can be achieved. Compared with a conventional method for preparing the gallium nitride micro / nano-tube array, by adopting the method disclosed by the invention, synthesis steps of gallium nitride micro / nano-tubes can be simplified, the production cost can be lowered, and moreover, a special porous surface structure can be formed. The preparation method is simple in process and convenient to operate, is easy to perform large-scale production, and has relatively low requirements for an experimental environment.

The invention relates to a method for preparing ternary-component AlxGaI-xN nanocone, realizing control in the full-ingredient range (x is larger than 0 and smaller than 1). The method for preparing the ternary-component AlxGaI-xN nanocone comprises the following steps of: making anhydrous GaCl3 as a gallium source and anhydrous AlCl3 as an aluminum source with a nitrogen source by adopting a chemical vapor deposition method under the condition that the evaporation temperatures of GaCl3 and AlCl3 are respectively 70-90 DEG C and 130-150 DEG C to generate single-phase AlxGaI-xN nanocone, wherein x is larger than 0 and smaller than 1, the preferred nitrogen source is NH3, and the deposition temperature is 650-800 DEG C. In the invention, the vapor partial pressure of reaction precursors GaCl3 and AlCl3 is finely controlled in a tube furnace of a three-segment temperature area to obtain a one-dimensional nano material with a single-crystal structure and uniformly distributed components, and the atom ratio of Al / Ga can be controlled in the full-ingredient range (x is larger than 0 and smaller than 1) by changing growth conditions.

The invention discloses a manufacturing method of a down-conversion luminescent material. The manufacturing method comprises the forming steps that 1, multi-target magnetron sputtering equipment is provided; 2, a plurality of target materials are mounted and selected according to to-be-formed rare earth doped oxide, the matrix material of the rare earth doped oxide is rare earth vanadate or rare earth niobate, the target materials comprise matrix rare earth oxide targets, vanadium oxide targets or niobium oxide targets and doped rare earth targets, wherein the matrix rare earth oxide targets,the vanadium oxide targets or the niobium oxide targets correspond to the matrix material, and the doped rare earth targets correspond to a rare earth doped material; 3, a substrate is placed on a base sheet base of a co-sputtering reaction chamber; 4, vacuumizing is conducted on the co-sputtering reaction chamber; and 5, sputtering gas is introduced, and a sputtering technology with the substratetemperature being room temperature to 400 DEG C is conducted, so that the rare earth doped oxide is formed on the surface of the substrate. According to the manufacturing method of the down-conversion luminescent material, large area growth of the down-conversion luminescent material at the low temperature can be achieved, the manufacturing method can be compatible with a microelectronic technology, the technology of the manufacturing method is simple, the cost is low, and the manufacturing method can be effectively combined with the preparation process of solar cells.