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Rare earth doped molybdenum sulfide monomolecular layer film and preparation method

A technology of rare earth doping and molybdenum sulfide alone, which is applied in coating, gaseous chemical plating, metal material coating process, etc., can solve the problems of rough surface of the film and uncontrollable number of layers of the target product, so as to reduce the dosage and reduce the pollution effect

Inactive Publication Date: 2020-02-11
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing reports of rare earth doped MoS 2 The film growth method is mainly magnetron sputtering growth, and the grown MoS 2 The surface of the film is rough and has a multi-molecular layer structure, and the number of layers of the target product is uncontrollable

Method used

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  • Rare earth doped molybdenum sulfide monomolecular layer film and preparation method
  • Rare earth doped molybdenum sulfide monomolecular layer film and preparation method
  • Rare earth doped molybdenum sulfide monomolecular layer film and preparation method

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Embodiment 1

[0033] The first step is to use acetone, deionized water, ultrasonic cleaning, and absolute ethanol in order to remove the impurities on the surface of the silicon wafer, put it in a blast drying oven and dry it for later use. When using it, blow it with an argon gun 3 times, 10s each time.

[0034] In the second step, put 1mg of 99.9% molybdenum trioxide and 0.75mg of lutetium chloride into the porcelain boat, and add 0.1mg of ground NaCl, and place the cleaned silicon wafer with the silicon dioxide-coated side facing down and suspending the lid into the porcelain boat and place the porcelain boat in the middle of the single temperature zone furnace. Concentrate 300mg of sulfur powder on a position 1-2cm outside the heating area of ​​the quartz tube.

[0035] In the third step, the quartz tube was sealed, and 99.999% high-purity argon gas was introduced at 1200 sccm for 5 minutes to remove the air in the tube, and then argon gas was continuously injected at 60 sccm until the ...

Embodiment 2

[0045] The first step is to use acetone, deionized water, ultrasonic cleaning, and absolute ethanol in order to remove the impurities on the surface of the silicon wafer, put it in a blast drying oven and dry it for later use. When using it, blow it with an argon gun 3 times, 10s each time.

[0046] In the second step, put 1 mg of 99.9% molybdenum trioxide and 1 mg of lutetium chloride into the porcelain boat, and add 0.1 mg of ground NaCl, and place the cleaned silicon wafer with the side coated with silicon dioxide facing down and suspending the lid into the porcelain boat and place the porcelain boat in the middle of the single temperature zone furnace. Concentrate 300mg of sulfur powder on a position 1-2cm outside the heating area of ​​the quartz tube.

[0047] In the third step, the quartz tube is sealed, and 99.999% high-purity argon gas is fed into the tube at 1050 sccm for 8 minutes to remove the air in the tube, and then the argon gas is continuously fed into the tube...

Embodiment 3

[0050] The first step is to use acetone, deionized water, ultrasonic cleaning, and absolute ethanol in order to remove the impurities on the surface of the silicon wafer, put it in a blast drying oven and dry it for later use. When using it, blow it with an argon gun 3 times, 10s each time.

[0051] In the second step, put 1mg of 99.9% molybdenum trioxide and 0.5mg of erbium chloride into the porcelain boat, and add 0.1mg of ground NaCl, and hang the cleaned silicon wafer with the side coated with silicon dioxide facing down. Cover it in a porcelain boat and place the porcelain boat in the middle of a single temperature zone furnace. Concentrate 300mg of sulfur powder on a position 1-2cm outside the heating area of ​​the quartz tube.

[0052] In the third step, the quartz tube was sealed, and 99.999% high-purity argon gas was introduced at 1150 sccm for 10 minutes to remove the air in the tube, and then argon gas was continuously introduced at 65 sccm until the reaction was co...

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Abstract

The invention relates to a rare earth doped molybdenum sulfide monomolecular layer film and a preparation method thereof. The preparation method comprises the following steps of putting sulfur powderon a quartz tube by using a single warm area tubular growth furnace by means of a chemical vapor deposition method; by taking a low-melting-point rare earth compound as a synthesized precursor, mixingthe low-melting-point rare earth compound and MoO in a combustion boat and blending into sodium chloride; introducing carrier gas into the furnace; heating the growth furnace to 600 DED C from room temperature within 18-22 min; then heating the growth furnace to 720-780 DEG C within 5-10 min; and keeping the temperature for 5-10 min to obtain the rare earth doped molybdenum sulfide monomolecularlayer film. By segmented temperature control growth, controlled doping is achieved while the dosage of the sulfur power can be reduced. A monomolecular layer of the rare earth doped molybdenum sulfidefilm grows in a large area by repeated experiments to control the reaction conditions.

Description

technical field [0001] The invention relates to a low-dimensional material and a preparation method thereof, in particular to a rare earth-doped molybdenum sulfide monolayer film and a preparation method thereof. Background technique [0002] MoS 2 It is a natural semiconductor itself, and when it is thinned from a bulk material to a monolayer, its forbidden band width will increase from 1.29eV to 1.80eV, and the energy band structure will also change from an indirect band gap to a direct band gap, which means Monolayer MoS 2 Materials are not only suitable for making microelectronic devices, but also suitable for making optoelectronic devices. MoS 2 The material has a suitable bandgap width, is in the visible light band, and has a wide range of applications, but its resistance is large and the photoelectric conversion efficiency is low. Rare earth elements have abundant electronic energy levels, and doping molybdenum sulfide materials with rare earth elements will make...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/44C23C16/448
CPCC23C16/305C23C16/44C23C16/4481
Inventor 刘红军苏少凯张福强景芳丽杨栋程任彩霞
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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