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Method of growing graphene film on insulating substrate in absence of catalyst

A technology of graphene film and insulating substrate, which is applied in the field of growing graphene film on non-catalyst insulating substrate, which can solve the problems of complex graphene principle, easy pollution, and large external interference

Inactive Publication Date: 2019-11-29
TIANJIN UNIVERSITY OF TECHNOLOGY
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Problems solved by technology

The principle of preparing graphene by chemical vapor deposition is complex, easy to pollute, and subject to external interference; the preparation of graphene film by arc discharge method has high quality, low crystallinity, and small size

Method used

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  • Method of growing graphene film on insulating substrate in absence of catalyst
  • Method of growing graphene film on insulating substrate in absence of catalyst
  • Method of growing graphene film on insulating substrate in absence of catalyst

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Embodiment 1～4

[0024] A method for growing a graphene film on a catalyst-free insulating substrate, comprising the following steps:

[0025] 1) Prepare a quartz tube, the length and inner diameter of the quartz tube are shown in Table 1. The two ends of the quartz tube are the raw material end and the base end respectively, and an insulating base (with an area of ​​1 cm × 2 cm) is placed in the base end of the quartz tube. The insulating base is shown in Table 1. Put a raw material of quality X in the raw material end of the quartz tube, the raw material is polyethylene, vacuumize the quartz tube, seal the quartz tube after vacuuming, so that the pressure inside the quartz tube is P.

[0026] 2) Heat the raw material end and the base end of the quartz tube for 60 minutes at the same time, and then cool to room temperature 20-25°C with the furnace after heating, and obtain a graphene film on the insulating substrate, wherein the temperature gradient between the raw material end and the base e...

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Abstract

The invention discloses a method of growing a graphene film on an insulating substrate in the absence of a catalyst. The method comprises following steps: preparing a quartz tube, wherein two ends ofthe quartz tube is a raw material end and a substrate end; placing an insulating substrate in the substrate end of the quartz tube, placing a raw material in the raw material end of the quartz tube; vacuumizing the quartz tube, then sealing the quartz tube until the pressure in the quartz tube reaches 10<-4> to 10 <-6> Pa, wherein the raw material is polyethylene or polypropylene; heating the rawmaterial end and the substrate end of the quartz tube for 0.5 to 1 hour, and then cooling the quartz tube in a furnace to 20 to 25 DEG C so as to form a graphene film on the insulating substrate, wherein the heating temperature of the raw material end is 1000 to 1150 DEG C, and the heating temperature of the substrate end is 200 to 900 DEG C. The provided method can prepare a graphene film that covers an insulating substrate with an area of 1 cm * 2 cm or larger according to the needs.

Description

technical field [0001] The invention belongs to the technical field of graphene film preparation, and in particular relates to a method for growing a graphene film on a catalyst-free insulating substrate. Background technique [0002] Graphene is a typical representative of two-dimensional materials. There are many methods for preparing graphene. The common ones are mechanical exfoliation method, redox method, chemical vapor deposition method, arc discharge method, etc. It can be widely used in electronic devices field, battery field, ink spraying, textile field, biomedicine, aerospace, energy storage and many other fields. [0003] At present, the graphene film prepared by mechanical exfoliation method is difficult to achieve consistent uniformity, and the yield is low. The preparation of graphene films by redox method requires high cost. The principle of graphene preparation by chemical vapor deposition is complex, easy to pollute, and subject to external interference; t...

Claims

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Application Information

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IPC IPC(8): C01B32/184
CPCC01B32/184
Inventor 邱海龙武羽胡章贵
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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