A Porous Single Crystal Gallium Nitride Micro/Nanotube Array with Controllable Inner Diameter and Its Preparation Method

A nanotube array and gallium nitride microtechnology, which is applied in the field of porous single crystal gallium nitride micro/nanotube arrays and their preparation, can solve the problem that metal organic raw materials are toxic, unfavorable for large-scale industrial production, and metal organic gallium sources have Toxicity and other problems, to achieve the effect of easy mass production, special morphology and uniform size

Active Publication Date: 2017-10-20
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 1) The metal-organic raw materials used are toxic and pose potential safety hazards
[0005] 2) The equipment is expensive, which is not conducive to the realization of large-scale industrial production
In this patent, the metal-organic chemical vapor deposition method used by the author is not only expensive, the metal-organic gallium source used is toxic, but also has many steps.
These will hinder the realization of large-scale production

Method used

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  • A Porous Single Crystal Gallium Nitride Micro/Nanotube Array with Controllable Inner Diameter and Its Preparation Method
  • A Porous Single Crystal Gallium Nitride Micro/Nanotube Array with Controllable Inner Diameter and Its Preparation Method
  • A Porous Single Crystal Gallium Nitride Micro/Nanotube Array with Controllable Inner Diameter and Its Preparation Method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] (1) Use such as figure 2 The shown chemical vapor deposition device will be untreated Ga / Ga 2 o 3 The mixed powder 2 (molar ratio 4:1) is placed in the middle of the quartz boat, followed by a zinc oxide micro / nanowire array 3 with an average diameter of about 800 nm, and the quartz boat is placed in the quartz tube so that the gallium source is located The central area of ​​the tube furnace. Use a vacuum pump to exhaust the air in the quartz tube, and then introduce an inert gas, so that the oxygen in the quartz tube can be exhausted as much as possible through three cycles. Then continuously blow 200 sccm of inert gas into the quartz tube for 30 minutes to exhaust oxygen as much as possible. Then start heating, the inert gas flow rate is maintained at 100 sccm during the heating process, and the heating rate is controlled to be 10 °C / min;

[0048] (2) When the temperature in the central area of ​​the tube furnace reaches 950°C, turn off the inert gas, and feed am...

Embodiment 2

[0053] A porous single crystal gallium nitride microtube array was prepared according to the method in Example 1. The difference is that Ga / Ga 2 o 3 The molar ratio of the mixed powder is 3:1, and the average diameter of the zinc oxide micro-wire arrays used for epitaxial growth is about 2 μm. When the temperature in the central area of ​​the tube furnace reaches 850°C, the inert gas is turned off, and ammonia gas and hydrogen / argon gas mixture are introduced at the same time. The flow rate of ammonia gas is controlled at 10 sccm, the volume ratio of hydrogen gas to argon gas is 1:5, and the flow rate is controlled. At 30 seem; after 5 h of reaction, the tube furnace was turned off. The scanning electron micrograph of the product that present embodiment obtains is as Figure 5 as shown in b. This result is similar to the result of Example 1, and a porous gallium nitride micro / nanotube array is also grown, and the average inner diameter of the microtubes is about 2 μm.

Embodiment 3

[0055] A porous single crystal gallium nitride microtube array was prepared according to the method in Example 1. The difference is that Ga / Ga 2 o 3 The molar ratio of the mixed powder 2 is 3:2, and the average diameter of the zinc oxide micro-wire array used for epitaxial growth is about 5 μm. When the temperature in the central area of ​​the tube furnace reaches 1050°C, the inert gas is turned off, and ammonia gas and hydrogen / argon gas mixture are introduced at the same time. The flow rate of ammonia gas is controlled at 50 sccm, the volume ratio of hydrogen gas to argon gas is 1:11, and the flow rate is controlled. At 90 seem; after 0.5 h of reaction, the tube furnace was turned off. The scanning electron micrograph of the product that present embodiment obtains is as Figure 6 as shown in b. The result of this example is similar to that of Examples 1 and 2, and uniform and porous gallium nitride microtube arrays are also grown, and the average inner diameter of the mi...

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Abstract

The invention relates to an inner-diameter-controllable porous mono-crystalline gallium nitride micro / nano-tube array and a preparation method thereof. The preparation method comprises the following steps: enabling a gallium source to be in contact with a nitrogen source at a reducing atmosphere, reacting to generate gallium nitride gaseous molecules, and performing epitaxial growth on the gallium nitride gaseous molecules by using a zinc oxide micro / nano-wire array as a template to prepare the inner-diameter-controllable porous mono-crystalline gallium nitride micro / nano-tube array, wherein reaction conditions of the epitaxial growth are as follows: the reaction temperature is 850-1050 DEG C, and the reaction time takes 0.5-5 hours. The gallium nitride micro / nano-tube array disclosed by the invention is special in morphology, uniform in size and controllable in inner diameter, and large-area growth can be achieved. Compared with a conventional method for preparing the gallium nitride micro / nano-tube array, by adopting the method disclosed by the invention, synthesis steps of gallium nitride micro / nano-tubes can be simplified, the production cost can be lowered, and moreover, a special porous surface structure can be formed. The preparation method is simple in process and convenient to operate, is easy to perform large-scale production, and has relatively low requirements for an experimental environment.

Description

technical field [0001] The invention belongs to the field of nanomaterial preparation, in particular to a porous single-crystal gallium nitride micro / nanotube array with controllable inner diameter and a preparation method thereof. Background technique [0002] As we all know, gallium nitride is considered to be an excellent material for making microwave power transistors and blue / violet light-emitting devices because of its wide band gap and high carrier mobility. Compared with other wide-bandgap semiconductor materials, the excellent characteristics of hardness, high melting point, and stable presence in acid and alkali solutions at room temperature make optoelectronic devices made of gallium nitride more competitive. . Generally speaking, compared with bulk materials, GaN nanotubes are considered to have great potential application value in photocatalysis, nanoelectronic devices, biosensors, etc. due to their large specific surface area, good mechanical strength and toug...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/02C30B29/40C30B29/60B82Y40/00B82Y30/00
Inventor 江帅贺蒙李建业
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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