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Preparation method of all-inorganic lead-free metal halide perovskite nanowire and high-performance infrared detection application of nanowire

A halide perovskite, lead-free metal technology, applied in the direction of inorganic chemistry, chemical instruments and methods, tin halide, etc., can solve the problems of ineffective response in the infrared band, environmental pollution of perovskite materials, etc., and achieve effective response , Realize the effect of energy band regulation and simple operation

Inactive Publication Date: 2019-08-27
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the environmental pollution of lead-based metal halide perovskite materials and the ineffective response to infrared bands are still unsolved.

Method used

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  • Preparation method of all-inorganic lead-free metal halide perovskite nanowire and high-performance infrared detection application of nanowire
  • Preparation method of all-inorganic lead-free metal halide perovskite nanowire and high-performance infrared detection application of nanowire
  • Preparation method of all-inorganic lead-free metal halide perovskite nanowire and high-performance infrared detection application of nanowire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Using a horizontal tube furnace with three temperature zones, it will contain 0.05g SnI 2 The porcelain boat of particles is placed in the upstream source area, 38cm away from the sample, and the porcelain boat filled with 0.05g CsI powder is placed in the middle reaches of the source area, 16cm away from the sample, and the freshly stripped fluorophlogopite substrate is placed in the middle of the downstream growth area for Nanowire growth. Pump down the pressure of the tube furnace to 10 -3 Torr and Ar for 20 minutes, the gas flow is 50 sccm. Raise the temperature of the growth zone to 210°C for 5 minutes and anneal the SnI 2 The temperature of the CsI source area and the CsI source area were raised to 350° C. and 650° C. respectively, and grown for 20 minutes. After the growth, the source region and the growth region stopped heating at the same time and gradually cooled to room temperature to obtain the nanowire CsSnI 3 .

Embodiment 2

[0053] Using a horizontal tube furnace with three temperature zones, it will contain 0.05g SnI 2 The porcelain boat of particles was placed in the upstream source area, 38cm away from the sample, and the porcelain boat filled with 0.05g CsBr powder was placed in the middle reaches of the source area, 16cm away from the sample, and the freshly peeled fluorophlogopite substrate was placed in the middle of the downstream growth area for Nanowire growth. Pump down the pressure of the tube furnace to 10 -3 Torr and Ar for 20 minutes, the gas flow is 50 sccm. Raise the temperature of the growth zone to 210°C for 5 minutes and anneal the SnI 2 The temperature of the CsBr source area and the CsBr source area were respectively raised to 350° C. and 630° C., and grown for 20 minutes. After the growth, the source region and the growth region stopped heating at the same time and gradually cooled to room temperature to obtain the nanowire CsSnBrI 2 .

Embodiment 3

[0055] Using a horizontal tube furnace with three temperature zones, it will contain 0.05g SnCl 2 The powder porcelain boat was placed in the upstream source area, 38cm away from the sample, and the porcelain boat filled with 0.05g CsCl powder was placed in the middle reaches of the source area, 16cm away from the sample, and the freshly peeled fluorophlogopite substrate was placed in the middle of the downstream growth area for Nanowire growth. Pump down the pressure of the tube furnace to 10 -3 Torr and Ar for 20 minutes, the gas flow is 50 sccm. Raise the temperature of the growth zone to 205°C for 5 minutes and anneal the SnCl 2 The temperature of the CsCl source area and the CsCl source area were respectively raised to 240° C. and 660° C., and grown for 20 minutes. After the growth is over, the source region and the growth region stop heating at the same time and gradually cool down to room temperature to obtain the nanowire CsSnCl 3 .

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Abstract

The invention relates to a preparation method of an all-inorganic lead-free metal halide perovskite nanowire and a high-performance infrared detection application of the nanowire. The nanowire is grown by a three-temperature-zone gas phase method, and the three temperature zones include the upstream source zone, the midstream source zone and the growth zone. A SnX2 source material is placed in theupstream source zone for providing a Sn source material; a CsX source material is placed in the midstream source zone for providing a CsX source material; a freshly stripped fluorophlogopite substrate is placed in the growth zone for growing the nanowire. A metal mask plate and electron beam evaporation are adopted for positioning and vapor deposition of metal electrodes to construct an infrareddetector. By means of the method, the new all-inorganic lead-free metal halide perovskite nanowire material which is free of toxicity, free of lead and environmentally friendly can be prepared, the forbidden band width is made continuously adjustable through energy band engineering, and effective response to near-infrared light is successfully realized. In the adopted chemical vapor deposition method, conditions are simple, and the cost is low. By adopting the electrode positioning method with the metal mask plate to prepare the infrared detector, the operation is convenient.

Description

technical field [0001] The invention relates to a preparation method of an all-inorganic lead-free metal halide perovskite nanowire and its high-performance infrared detection application, and belongs to the field of preparation of low-dimensional photoelectric materials. Background technique [0002] Thanks to the advantages of high absorption coefficient, high carrier mobility, low defect state density and long carrier diffusion length under broad absorption spectrum, the efficiency of metal halide perovskite solar cells can be achieved in a short It has increased from 3.8% to 23.7% within 10 years, surpassing polycrystalline silicon solar cells, and there is still a lot of room for improvement. Besides, due to the large specific surface area and abundant surface states, low-dimensional metal halide perovskite materials are considered to be one of the best channel materials for next-generation high-performance optoelectronic devices. [0003] The current mainstream metal ...

Claims

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Application Information

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IPC IPC(8): C01G19/04B82Y40/00C09K11/66
CPCB82Y40/00C01G19/006C01G19/04C01P2002/80C01P2004/01C01P2004/16C09K11/665
Inventor 杨再兴韩明明孙嘉敏刘东
Owner SHANDONG UNIV
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