Preparation method of all-inorganic lead-free metal halide perovskite nanowire and high-performance infrared detection application of nanowire
A halide perovskite, lead-free metal technology, applied in the direction of inorganic chemistry, chemical instruments and methods, tin halide, etc., can solve the problems of ineffective response in the infrared band, environmental pollution of perovskite materials, etc., and achieve effective response , Realize the effect of energy band regulation and simple operation
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[0050] Example 1
[0051] Using a three-temperature zone horizontal tube furnace, it will contain 0.05g SnI 2 The ceramic boat of particles was placed in the upstream source area, 38 cm away from the sample, the ceramic boat filled with 0.05 g CsI powder was placed in the midstream source area, 16 cm away from the sample, and the freshly peeled fluorocrystalline mica substrate was placed in the middle of the downstream growth area for Growth of nanowires. Pump down the pressure of the tube furnace to 10 -3 Torr and pass Ar for 20 minutes, the gas flow is 50sccm. The temperature of the growth zone was raised to 210 °C for 5 min annealing, after which the SnI 2 The temperature of the CsI source region was increased to 350°C and 650°C, respectively, and the growth was performed for 20 minutes. After the growth, the heating of the source region and the growth region was stopped at the same time and gradually cooled to room temperature to obtain the nanowire CsSnI. 3 .
Example Embodiment
[0052] Example 2
[0053] Using a three-temperature zone horizontal tube furnace, it will contain 0.05g SnI 2 The ceramic boat of particles was placed in the upstream source area, 38 cm away from the sample, the ceramic boat filled with 0.05 g CsBr powder was placed in the midstream source area, 16 cm away from the sample, and the freshly peeled fluorocrystalline mica substrate was placed in the middle of the downstream growth area for Growth of nanowires. Pump down the pressure of the tube furnace to 10 -3 Torr and pass Ar for 20 minutes, the gas flow is 50sccm. The temperature of the growth zone was raised to 210 °C for 5 min annealing, after which the SnI 2 The temperature of the CsBr source region was increased to 350°C and 630°C, respectively, and the growth was performed for 20 minutes. After the growth, the heating of the source region and the growth region was stopped at the same time and gradually cooled to room temperature to obtain the nanowire CsSnBrI. 2 .
Example Embodiment
[0054] Example 3
[0055] A three-temperature zone horizontal tube furnace is used, which will contain 0.05g SnCl 2 The powder ceramic boat was placed in the upstream source area, 38 cm away from the sample, the ceramic boat filled with 0.05g CsCl powder was placed in the midstream source area, 16 cm away from the sample, and the freshly peeled fluorocrystalline mica substrate was placed in the middle of the downstream growth area for Growth of nanowires. Pump down the pressure of the tube furnace to 10 -3 Torr and pass Ar for 20 minutes, the gas flow is 50sccm. The temperature of the growth zone was raised to 205 °C for 5 min, after which the SnCl 2 The temperature of the CsCl source region was increased to 240°C and 660°C, respectively, and the growth was performed for 20 minutes. After the growth, the heating of the source region and the growth region was stopped at the same time and gradually cooled to room temperature to obtain the nanowire CsSnCl 3 .
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