Growing device of gas inner circulation type hot wire chemical vapor deposition (CVD) diamond films

Abstract

The invention relates to a growing device of gas inner circulation type hot wire CVD diamond films. The device comprises a sealed vacuum chamber provided with a reaction chamber inside. A fan is arranged at the top end of the inner wall of the reaction chamber, and a hot wire array composed of a plurality of parallel vertical tungsten wires is arranged below the fan; two ends of the hot wire array are connected with direct current, a substrate plate is arranged below the hot wire array, and a thermocouple is arranged on the substrate plate; an air inlet is arranged on the outer wall of the vacuum chamber on the upper side portion of the fan; and an air pumping opening is arranged on the lower side portion of the outer wall of the vacuum cavity. According to the growing device, large area and high speed growth of diamond films can be achieved, and consumption of hydrogen is reduced.

Description

technical field [0001] The invention relates to a diamond film growth device, in particular to a gas internal circulation hot wire CVD diamond film growth device. Background technique [0002] Due to its good optical, mechanical, electrical and chemical stability properties, diamond coating has a wide range of applications in industry and daily life. The initial diamond synthesis was mainly the high temperature and high pressure method. Although it has many disadvantages such as harsh preparation conditions, low synthesis quality, and high cost, it is still the preferred method for preparing diamond. In the past two decades, the study of low-temperature and low-pressure chemical vapor deposition of diamond films has attracted much attention from researchers all over the world. At present, the commonly used preparation methods mainly include microwave CVD, hot wire CVD, DC arc plasma, combustion method, etc., and their commonality is that the plasma generated by the low mol...

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Problems solved by technology

At present, the commonly used preparation methods mainly include microwave CVD, hot wire CVD, DC arc plasma, combustion method, etc., and their commonality is that the plasma generated by the low molecular hydrocarbon gas diluted in excess hydrogen under the excitation of a certain energy, through Suitable deposition conditions can deposit diamond film on the substrate, but the growth rate is low, the growth area is small, and the film quality is still low. It is still an urgent problem to be solved.

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