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65results about How to "Guaranteed high growth" patented technology

Preparation method of silicon epitaxial wafer for high-voltage power device

The invention discloses a preparation method of a silicon epitaxial wafer for a high-voltage power device. According to the method, a reaction cavity of the epitaxial equipment is purified and the content of impurities accumulated in the cavity is reduced by long-time purging of large-flow hydrogen before epitaxial growth; the nonlinear gradient heating is adopted, so that the stress accumulated in the heating stage is released in time, and the generation probability of defects is reduced; and the reaction rate is significantly improved by shortening the distance between a quartz bell jar anda base of the reaction cavity of the epitaxial equipment and adopting a large-flow trichlorosilane and hydrogen proportioning mode, and high-speed epitaxial growth is realized under the premise of ensuring good crystallization quality of the silicon epitaxial wafer. The problem of comprehensive control on thickness, resistivity and crystallization quality in the existing preparation process is overcome by adopting the method of sectional growth of the silicon epitaxial wafer layer. the prepared silicon epitaxial wafer has a bright surface, is free from dislocation, staggered layers, slip linesand fog defects, realizes the controllability of material indexes such as thickness, resistivity and defects and meets the use requirements of the high-voltage power device.
Owner:CHINA ELECTRONICS TECH GRP NO 46 RES INST

Method of growth morphology and component control over plane germanium silicon and relative nanowires based on heterogeneous laminated amorphous film supply

The invention provides a method for preparation of heterogeneous or alloy semiconductor nanowires by means of a laminated amorphous precursor layer. With the silicon germanium system as an example, amorphous silicon (a-Si)/amorphous germanium (a-Ge) laminated film is used as the precursor, the silicon germanium chain nanowire structure of spontaneous phase separation is prepared, the laminated layer amorphous film is used as the precursor layer, through absorption of metal droplets and the plane nanowire growth process, plane silicon germanium nanowires of spontaneous phase separation are achieved, its morphology can be controlled through the thickness of the laminated layer and the laminated sequence, and the silicon germanium chain structure is regulated; when the amorphous germanium layer is on the bottom of the a-Si/ a-Ge structure, the wide area of the silicon and germanium nanowires is the high-concentration area of germanium, while the thin nanowires are connected to a high-concentration area of silicon; or the silicon germanium alloy nanowire structure with a uniform diameter is achieved by the reverse laminated sequence, or the silicon-germanium alternate area structure including microzone intervals is formed.
Owner:NANJING UNIV

Double antireflection layer structure of solar cell reflection film and preparation method thereof

The invention relates to a double antireflection layer structure of a solar cell reflection film and a preparation method thereof. The double antireflection layer structure is formed by an upper antireflection layer, a crater antireflection layer and a base layer in sequence. The crater antireflection layer in the middle is provided with arc-slope concave craters. The upper antireflection layer is composited on the upper surface of the crater antireflection layer and is formed by a bottom layer film and particles densely arranged thereon, wherein the surface of each particle has a suede shape. The bottom layer film and the upper surface of the crater antireflection layer are integrated and jointly form the concave craters. The crater layer is prepared through deposition by adopting the PECVD technology; the PECVD technology can be used to prepare the uniform and performance-stable crater layer structure; the controllability is high; and the thickness of the antireflection layer can be controlled accurately. A solar cell has more than 90 % high transmissivity. The antireflection layer is simple in specific processes, quick in deposition time and low in energy consumption; the double antireflection layers has sequentially-increasing refractive rate; and the structure can provide possibility for large-area industrial production.
Owner:常德东腾新能源有限公司
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