Process for producing SiC single crystal

一种制造方法、单晶的技术，应用在单晶生长、单晶生长、化学仪器和方法等方向，能够解决无助于降低等问题，达到提高C过饱和度、高速生长的效果

一种制造方法、单晶的技术，应用在单晶生长、单晶生长、化学仪器和方法等方向，能够解决无助于降低等问题，达到提高C过饱和度、高速生长的效果

CN102449208AActive Publication Date: 2012-05-09TOYOTA JIDOSHA KK
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  • Process for producing SiC single crystal
  • Process for producing SiC single crystal
  • Process for producing SiC single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0038] Growth of SiC single crystal was carried out in the following procedure.

[0039] Basic Crystal Growth Process

[0040] · Growth preparation (refer to figure 1 )

[0041] (1) The 4H—SiC seed crystal 18 is bonded to the support shaft 16 made of graphite.

[0042] (2) Putting raw materials into the graphite crucible 10 .

[0043] (3) Put them as figure 1 constituted as shown.

[0044] (4) Ar20 at atmospheric pressure is introduced.

[0045] (5) Raise the temperature to the desired temperature.

[0046] ·Seed contact

[0047] (1) When the temperature of the melt 14 reaches a sufficient temperature, the support shaft 16 is lowered.

[0048] (2) The seed crystal 18 is brought into contact with the melt 14, the shaft 16 is lowered to a desired depth (*), and then the shaft is stopped. (*: In the present embodiment, stop at the position where the seed crystal 18 touches the liquid surface of the melt 14. In general, the seed crystal 18 sometimes sinks into the melt 14...

Embodiment 1

[0073] The growth temperature was set at 1800° C., and the seed crystal contact was performed when the temperature was raised to this temperature. After the contact of the seed crystal, the temperature was raised to 1900°C, and then the temperature was lowered to the growth temperature of 1800°C, and the growth was carried out for 1 hour. The etch pit density of the obtained crystal is the same as that of the seed crystal (1×10 4 cm -2 ).

[0074] The technological process of embodiment 1 is shown in Figure 6 . In the form (A), the seed crystal contact was performed after maintaining the temperature at the growth temperature of 1800° C., and in the form (B), the seed crystal contact was performed without maintaining the temperature at the growth temperature. Any of the forms (A) and (B) may be used as long as the process H of temporarily raising the temperature is performed after the contact of the seed crystals.

[0075] Table 1 summarizes the results obtained in the ab...

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Abstract

Disclosed is a process for producing an SiC single crystal by a solution method. The process can prevent defects attributable to seed touch in which seed crystals are brought into contact with a solution to grow SiC single crystals with reduced defect density. The process comprises bringing SiC seed crystals into contact with a melt containing Si within a graphite crucible to grow SiC single crystals on the SiC seed crystals and is characterized in that, after the contact of the solution with the SiC seed crystals, the temperature of the solution is once raised to a temperature that is above the temperature in the contact and above the temperature in the growth.

Description

technical field [0001] The present invention relates to a method for producing a SiC single crystal using a melt method. Background technique [0002] Since SiC has a larger energy band gap than Si, various techniques for producing a high-quality SiC single crystal suitable as a semiconductor material or the like have been proposed. Various methods have been tried so far as methods for producing SiC single crystals, but the sublimation method and the melt method are most commonly used at present. Although the sublimation method has a fast growth rate, it has the disadvantages of easily producing defects such as micro-shrinkage cavities and / or crystal polymorphic transformation. In contrast, the melt method, which has a relatively slow growth rate but does not have these disadvantages, is considered to be very promising. hope. [0003] In the method for producing a SiC single crystal by the melt method, a temperature gradient is maintained in the Si melt in the graphite cru...

Claims

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Application Information

Patent Timeline
09 May 2012
Publication
CN102449208A
IPC
C30B29/36; C30B15/14; C30B19/04
CPC
C30B19/04; C30B29/36; C30B15/14; C30B17/00
Inventors
旦野克典; 关章宪