The invention discloses a pulse laser etching device used for a transparent electroconductive thin film and a control method of the pulse laser etching device. The pulse laer etching device comprises a vacuum platform used for adsorbing a film material, a laser and a galvanometer, a beam expander is arranged between the laser and the galvanometer, a CCD image sensor is arranged above the vacuum platform, an air blowing device is arranged on one side of the vacuum platform, and a dust collecting device is arranged on the other side of the vacuum platform. The high-frequency short-pulse laser is adopted as a laser source for laser etching, film material etching is completed through the small-breadth galvanometer, and generated dust is collected through an air blowing system and a dust collecting system, so that the defects of high cost, low efficiency, large processing limitation, serious pollution and the like in the prior art can be overcome, etching process can be simplified, and accuracy can be improved.