Flip chip LED chip electrode structure and method of generating the same

Abstract

The present application relates to the technical fields of semiconductor preparation, in particular to a flip car lamp LED chip electrode structure and a generating method thereof, comprising the following steps: S1: evaporating Cr on the silver mirror protective layer body of the LED; S2: stopping evaporating Cr; evaporating Pt; S3: stopping evaporating Pt, evaporating Cr; S4: stopping evaporating Cr, evaporating Pt; S5: stopping evaporating Pt, evaporating Au; S6: stopping evaporating Au, evaporating Ti; stopping evaporating Ti, to obtain the flip car lamp LED chip electrode structure. The flip car lamp LED chip electrode structure provided by the present application and the generating method thereof provide multiple protection for the silver mirror reflection layer, and the corrosion resistance to the silicon dioxide corrosion liquid is excellent, and the anti-aging property and reliability are excellent.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor preparation, in particular to a flip car lamp LED chip electrode structure and a generation method thereof. BACKGROUND

[0002] LED (Light Emitting Diode) is a kind of solid-state semiconductor device that converts electrical energy into light energy. As a new type of light-emitting device, LED has the advantages of high light efficiency, energy saving, long service life, short response time, environmental protection, etc., so it is called the most potential new generation light source, and is very common in the field of lighting. With the continuous development of economy, cars as a means of transportation are increasingly popular in every family. In the past ten years, LED as the trend of car lamp lighting is more and more obvious. From the process route, the LED chip for car lighting adopts flip chip structure, mainly because flip chip does not need wire bonding, which reduces the volume of packaging module, and is suitable for packaging substrates of various materials.

[0003] In the production process of LED semiconductor, silicon dioxide is used to cover the electrode to avoid electrode leakage, and the related structure is as follows:

[0004] Silver mirror reflection layer, for reflecting light, making light emit in the correct direction.

[0005] Silver mirror protection layer, covering the silver mirror reflection layer, for protecting the silver mirror reflection layer, also as part of the LED electrode.

[0006] Silicon dioxide layer, covering the silver mirror protection layer.

[0007] In the prior art, the silicon dioxide layer needs to be opened to connect the external power supply through the silver mirror protection layer; in order to etch a complete electrode opening on the silicon dioxide layer, an excessive etching method is usually used. However, the etching liquid can easily etch through the silver mirror protection layer and etch the silver mirror reflection layer; after the silver mirror reflection layer is etched, the reflection effect is obviously reduced, which reduces the light-emitting efficiency of the LED semiconductor. Therefore, how to improve the corrosion resistance of the silver mirror protection layer has become a difficult problem for those skilled in the art. SUMMARY

[0008] The technical problem to be solved by the present application is to provide a flip car lamp LED chip electrode structure and a generation method thereof, which improves the corrosion resistance of the silver mirror protection layer and avoids the corrosion of the silver mirror reflection layer.

[0009] To solve the above technical problems, a technical solution adopted by the present application is as follows: a flip car lamp LED chip electrode structure and a generation method thereof, comprising the following steps:

[0010] S1: evaporating Cr on the silver mirror protection layer body of the LED;

[0011] S2: Stop Cr vapor deposition; stop Pt vapor deposition;

[0012] S3: Stop Pt vapor deposition, start Cr vapor deposition;

[0013] S4: Stop Cr vapor deposition and start Pt vapor deposition;

[0014] S5: Stop Pt evaporation and start Au evaporation;

[0015] S6: Stop evaporating Au, then evaporate Ti; stop evaporating Ti to obtain the flip-chip LED chip electrode structure.

[0016] The beneficial effects of the present invention are as follows: In the inverted LED chip electrode structure and its generation method provided by the present invention, Cr has excellent corrosion resistance. When the etching solution over-etches silicon dioxide, Cr avoids the etching solution from penetrating Cr as much as possible, thus preventing the silver mirror protective layer body below it from being corroded.

[0017] The two-layer Cr coating provides double protection for the silver mirror body.

[0018] The advantage of using Au is that there may be various grades of silica etching solutions. Au has better corrosion resistance than Cr to certain grades of etching solutions, so using Au prevents certain etching solutions from penetrating Cr.

[0019] The top Ti layer improves the adhesion between the silver mirror protective layer and the silica layer to be deposited subsequently.

[0020] Pt can protect the metal layer it contacts and slow down the aging rate of the metal layer.

[0021] Therefore, the inverted LED chip electrode structure and its generation method provided by the present invention provide multiple protections for the silver mirror reflective layer, have excellent corrosion resistance to silicon dioxide etching solution, and have excellent anti-aging properties and reliability. Attached Figure Description

[0022] Figure 1 This is a partial structural schematic diagram of an inverted LED chip electrode structure for automotive lighting according to a specific embodiment of the present invention;

[0023] Label Explanation:

[0024] 1. First Cr layer; 2. First AlCu layer; 3. First Ti layer; 4. Second AlCu layer; 5. Second Ti layer; 6. Third AlCu layer; 7. Third Ti layer; 8. Second Cr layer; 9. First Pt layer; 10. Third Cr layer; 11. Second Pt layer; 12. First Au layer; 13. Fourth Ti layer. Detailed Implementation

[0025] To explain in detail the technical content, objectives, and effects of the present invention, the following description is provided in conjunction with the embodiments and accompanying drawings.

[0026] Please refer to Figure 1 A flip-chip LED chip electrode structure for automotive lighting and its manufacturing method, comprising the following steps:

[0027] S1: Cr is deposited on the silver mirror protective layer of the LED;

[0028] S2: Stop Cr vapor deposition; stop Pt vapor deposition;

[0029] S3: Stop Pt vapor deposition, start Cr vapor deposition;

[0030] S4: Stop Cr vapor deposition and start Pt vapor deposition;

[0031] S5: Stop Pt evaporation and start Au evaporation;

[0032] S6: Stop evaporating Au, then evaporate Ti; stop evaporating Ti to obtain the flip-chip LED chip electrode structure.

[0033] As can be seen from the above description, the beneficial effects of the present invention are as follows: In the inverted LED chip electrode structure and its generation method provided by the present invention, Cr has excellent corrosion resistance. When the etching solution over-etches silicon dioxide, Cr avoids the etching solution from penetrating Cr as much as possible, thus preventing the silver mirror protective layer body below it from being corroded.

[0034] The two-layer Cr coating provides double protection for the silver mirror body.

[0035] The advantage of using Au is that there may be various grades of silica etching solutions. Au has better corrosion resistance than Cr to certain grades of etching solutions, so using Au prevents certain etching solutions from penetrating Cr.

[0036] The top Ti layer improves the adhesion between the silver mirror protective layer and the silica layer to be deposited subsequently.

[0037] Pt can protect the metal layer it contacts and slow down the aging rate of the metal layer.

[0038] Therefore, the inverted LED chip electrode structure and its generation method provided by the present invention provide multiple protections for the silver mirror reflective layer, have excellent corrosion resistance to silicon dioxide etching solution, and have excellent anti-aging properties and reliability.

[0039] Furthermore, it also includes S0.1, S0.2, and S0.3 preceding S1;

[0040] S0.1: A gallium nitride-based N-layer, a quantum well layer, and a P-type semiconductor layer are sequentially grown on a sapphire substrate using a metal-organic chemical vapor deposition method.

[0041] S0.2: A silver mirror reflective layer is sputtered onto the P layer;

[0042] S0.3: Deposit the silver mirror protective layer onto the silver mirror reflective layer.

[0043] As described above, a simple and efficient method for generating a silver mirror reflective layer is provided.

[0044] Further, S0.3 specifically involves sequentially depositing a first Cr layer 1, a first AlCu layer 2, a first Ti layer 3, a second AlCu layer 4, a second Ti layer 5, a third AlCu layer 6, and a third Ti layer 7 onto the silver mirror reflective layer.

[0045] As described above, a simple and efficient structure for a silver mirror protective layer and a method for its fabrication are provided.

[0046] Further, S0.2 specifically involves: depositing an ITO layer on the P layer, wherein the edge of the ITO layer is 10-18 micrometers away from the P layer, and sputtering a silver mirror reflective layer on the P layer and the ITO layer.

[0047] As described above, the current flows evenly through the P layer in the ITO layer, avoiding current concentration at a single point on the P layer and increasing the luminous output of the flip-chip LED chip.

[0048] Furthermore, S6, "stopping the evaporation of Ti to obtain the flip-chip LED chip electrode structure," specifically involves stopping the evaporation of Ti, depositing a silicon dioxide layer, and opening a P-type opening on the silicon dioxide layer for electrical connection to the silver mirror protective layer, thereby obtaining the flip-chip LED chip electrode structure.

[0049] As described above, the silicon dioxide layer is not all the silicon dioxide layers on the flip-chip automotive LED chip. The silicon dioxide layer does not cover the N layer, so there is no N-terminal opening on the silicon dioxide layer. The above configuration provides a simple and efficient method for generating the silicon dioxide layer.

[0050] Further, the step S6, "stopping Ti evaporation and depositing a silicon dioxide layer," specifically involves: stopping Ti evaporation to obtain an LED semi-finished product; placing the LED semi-finished product into a deposition chamber; setting the deposition chamber to 200-260 degrees Celsius; depositing silicon dioxide; simultaneously introducing silane into the deposition chamber at 150-250 sccm and nitrous oxide into the deposition chamber at 1000-1500 sccm; the silicon dioxide deposition thickness...

[0051] As described above, the above setup provides a simple and efficient method for generating a silicon dioxide layer.

[0052] Furthermore, the electrode structure and its generation method of the inverted automotive lamp LED chip are specifically as follows: S1: On the silver mirror protective layer body of the LED, Cr deposition rate;

[0053] S2: Stop Cr evaporation; Cr vapor deposition; stop Cr vapor deposition to obtain The second Cr layer 8, on the second Cr layer 8 with Pt vapor deposition;

[0054] S3: Stop Pt evaporation; Pt vapor deposition; stop Pt vapor deposition to obtain The first Pt layer 9, on the first Pt layer 9 with Cr vapor deposition;

[0055] S4: Stop Cr vapor deposition; Cr vapor deposition; stop Cr vapor deposition to obtain The third Cr layer 10, in the third Cr layer 10 Pt vapor deposition;

[0056] S5: Stop Pt evaporation; Pt vapor deposition; stop Pt vapor deposition” to obtain a second Pt layer 11, and on the second Pt layer 11... Au vapor deposition;

[0057] S6: Stop Au evaporation; Au vapor deposition, stop Au vapor deposition to obtain First Au layer 12, on the first Au layer Evaporation of Ti; Stopping the evaporation of Ti; "with "Evaporate Ti; Stop evaporating Ti" The fourth Ti layer 13 is obtained; thus, the electrode structure of the inverted vehicle light LED chip is obtained.

[0058] As described above, the above configuration provides a process for generating a second Cr layer 8, a first Pt layer 9, a third Cr layer 10, a second Pt layer 11, a first Au layer 12, and a fourth Ti layer 13. The above metal layers are generated using the above process parameters, making the metal layers denser, with excellent adhesion and better corrosion resistance.

[0059] Furthermore, the vapor deposition process of the first Cr layer 1 of S0.3 is as follows: Evaporation rate The vapor deposition processes for the first AlCu layer 2, the second AlCu layer 4, and the third AlCu layer 6 of S0.3 are all: firstly, using... Evaporation Subsequently Evaporation Finally Evaporation

[0060] As described above, the vapor deposition process of the first AlCu layer 2, the second AlCu layer 4, and the third AlCu layer 6 makes the structure of the first AlCu layer 2, the second AlCu layer 4, and the third AlCu layer 6 more compact and improves their adhesion to each metal layer. AlCu can increase the light reflectivity of the silver mirror reflective layer.

[0061] Furthermore, the vapor deposition processes for the first Ti layer 3, the second Ti layer 5, and the third Ti layer 7 of S0.3 are all: firstly, using... Evaporation Finally Evaporation

[0062] As described above, the first Ti layer 3, the second Ti layer 5, and the third Ti layer 7 increase the adhesion between the metal layers, and the first Ti layer 3, the second Ti layer 5, and the third Ti layer 7 are generated with the above process parameters to make their structure more stable.

[0063] Example 1

[0064] Please refer to Figure 1 A flip-chip LED chip electrode structure for automotive lighting and its manufacturing method, comprising the following steps:

[0065] S0.1: A gallium nitride-based N-layer, quantum well layer, and P-layer are sequentially grown on a sapphire substrate using a metal-organic chemical vapor deposition method.

[0066] S0.11: The P-layer and quantum well layer are etched using photolithography and plasma etching (etching depth) This exposes layer N.

[0067] S0.12: Cleaning removes residual substances generated by photolithography and plasma etching, ensuring the cleanliness of the exposed surface of the N layer.

[0068] Specifically, the structure generated in the above steps is placed in a cleaning tank, bubble-cleaned for 120 seconds, and then discharged. This enhances the wetting of the etching tank.

[0069] The spin dryer is set to a speed of 500 r / min and the rinsing is maintained for 100 seconds. The medium-speed ionized water rinsing replaces the water in the porous structure and removes the residue.

[0070] Set the spin dryer to 2000 rpm, turn off the water rinse, open the air valve, and maintain air blowing for 360 seconds to ensure the surface is completely dry.

[0071] S0.2: An ITO layer is deposited on the P layer, the edge of the ITO layer being 10-18 micrometers away from the P layer, and a silver mirror reflective layer is sputtered on the P layer and the ITO layer;

[0072] S0.3: Deposit the silver mirror protective layer body on the silver mirror reflective layer by vapor deposition; "deposit the silver mirror protective layer body" specifically means: sequentially deposit the first Cr layer, the first AlCu layer, the first Ti layer, the second AlCu layer, the second Ti layer, the third AlCu layer, and the third Ti layer on the silver mirror reflective layer by vapor deposition;

[0073] The vapor deposition process of the first Cr layer is as follows: Evaporation rate The vapor deposition processes for the first AlCu layer, the second AlCu layer, and the third AlCu layer are all: firstly, using... Evaporation Subsequently Evaporation Finally Evaporation

[0074]

[0075] The vapor deposition processes for the first Ti layer, the second Ti layer, and the third Ti layer are all: firstly, using... Evaporation Finally Evaporation

[0076] S1: On the silver mirror protective layer of the LED body, with Cr deposition rate;

[0077] S2: Stop Cr evaporation; Cr vapor deposition; stop Cr vapor deposition to obtain The second Cr layer, on the second Cr layer with Pt vapor deposition;

[0078] S3: Stop Pt evaporation; Pt vapor deposition; stop Pt vapor deposition to obtain The first Pt layer, on the first Pt layer with Cr vapor deposition;

[0079] S4: Stop Cr vapor deposition; Cr vapor deposition; stop Cr vapor deposition to obtain The third Cr layer, in the third Cr layer Pt vapor deposition;

[0080] S5: Stop Pt evaporation; Pt vapor deposition; stop Pt vapor deposition to obtain a second Pt layer, and then on the second Pt layer... Au vapor deposition;

[0081] S6: Stop Au evaporation; Au vapor deposition, stop Au vapor deposition to obtain The first Au layer, on the first Au layer... Evaporation of Ti; Stopping the evaporation of Ti; "with "Evaporate Ti; Stop evaporating Ti" The fourth Ti layer is then deposited; an LED semi-finished product is obtained, which is placed into the deposition chamber at 200-260 degrees Celsius. Silicon dioxide is deposited, while silane is introduced into the deposition chamber at 150-250 sccm, and nitrous oxide is introduced at 1000-1500 sccm. The silicon dioxide deposition thickness is... The electrode structure of the inverted automotive LED chip was obtained.

[0082] Example 2

[0083] Please refer to Figure 1 A flip-chip LED chip electrode structure for automotive lighting and its manufacturing method, comprising the following steps:

[0084] S0.1: A gallium nitride-based N-layer, quantum well layer, and P-layer are sequentially grown on a sapphire substrate using a metal-organic chemical vapor deposition method.

[0085] S0.11: The P-layer and quantum well layer are etched using photolithography and plasma etching (etching depth) This exposes layer N.

[0086] S0.12: Cleaning removes residual substances generated by photolithography and plasma etching, ensuring the cleanliness of the exposed surface of the N layer.

[0087] Specifically, the structure generated in the above steps is placed in a cleaning tank, bubble-cleaned for 120 seconds, and then discharged. This enhances the wetting of the etching tank.

[0088] The spin dryer is set to a speed of 500 r / min and the rinsing is maintained for 100 seconds. The medium-speed ionized water rinsing replaces the water in the porous structure and removes the residue.

[0089] Set the spin dryer to 2000 rpm, turn off the water rinse, open the air valve, and maintain air blowing for 360 seconds to ensure the surface is completely dry.

[0090] S0.2: An ITO layer is deposited on the P layer, the edge of the ITO layer being 10-18 micrometers away from the P layer, and a silver mirror reflective layer is sputtered on the P layer and the ITO layer;

[0091] S0.3: Deposit the silver mirror protective layer body on the silver mirror reflective layer by vapor deposition; "deposit the silver mirror protective layer body" specifically means: sequentially deposit the first Cr layer, the first AlCu layer, the first Ti layer, the second AlCu layer, the second Ti layer, the third AlCu layer, and the third Ti layer on the silver mirror reflective layer by vapor deposition;

[0092] The vapor deposition process of the first Cr layer is as follows: Evaporation rate The vapor deposition processes for the first AlCu layer, the second AlCu layer, and the third AlCu layer are all: firstly, using... Evaporation Subsequently Evaporation Finally Evaporation

[0093] The vapor deposition processes for the first Ti layer, the second Ti layer, and the third Ti layer are all: firstly, using... Evaporation Finally Evaporation

[0094] S1: On the silver mirror protective layer of the LED body, with Cr deposition rate;

[0095] S2: Stop Cr evaporation; Cr vapor deposition; stop Cr vapor deposition to obtain The second Cr layer, on the second Cr layer with Pt vapor deposition;

[0096] S3: Stop Pt evaporation; Pt vapor deposition; stop Pt vapor deposition to obtain The first Pt layer, on the first Pt layer with Cr vapor deposition;

[0097] S4: Stop Cr vapor deposition; Cr vapor deposition; stop Cr vapor deposition to obtain The third Cr layer, in the third Cr layer Pt vapor deposition;

[0098] S5: Stop Pt evaporation; Pt vapor deposition; stop Pt vapor deposition to obtain a second Pt layer, and then on the second Pt layer... Au vapor deposition;

[0099] S6: Stop Au evaporation; Au vapor deposition, stop Au vapor deposition to obtain The first Au layer, on the first Au layer... Evaporation of Ti; Stopping the evaporation of Ti; "with "Evaporate Ti; Stop evaporating Ti" The fourth Ti layer is formed; an LED semi-finished product is obtained, which is then placed into a deposition chamber at 230 degrees Celsius. Silicon dioxide is deposited, while silane is simultaneously introduced into the deposition chamber at 200 sccm, and nitrous oxide is introduced at 1250 sccm. The silicon dioxide deposition thickness is... The electrode structure of the inverted automotive LED chip was obtained.

[0100] Example 3

[0101] Please refer to Figure 1 A flip-chip LED chip electrode structure for automotive lighting and its manufacturing method, comprising the following steps:

[0102] S0.1: A gallium nitride-based N-layer, quantum well layer, and P-layer are sequentially grown on a sapphire substrate using a metal-organic chemical vapor deposition method.

[0103] S0.2: An ITO layer is deposited on the P layer, the edge of the ITO layer being 10-18 micrometers away from the P layer, and a silver mirror reflective layer is sputtered on the P layer and the ITO layer;

[0104] S0.3: Deposit the silver mirror protective layer body on the silver mirror reflective layer by vapor deposition; "deposit the silver mirror protective layer body" specifically means: sequentially deposit the first Cr layer, the first AlCu layer, the first Ti layer, the second AlCu layer, the second Ti layer, the third AlCu layer, and the third Ti layer on the silver mirror reflective layer by vapor deposition;

[0105] The vapor deposition process of the first Cr layer is as follows: Evaporation rate The vapor deposition processes for the first AlCu layer, the second AlCu layer, and the third AlCu layer are all: firstly, using... Evaporation Subsequently Evaporation Finally Evaporation

[0106] The vapor deposition processes for the first Ti layer, the second Ti layer, and the third Ti layer are all: firstly, using... Evaporation Finally Evaporation

[0107] S1: On the silver mirror protective layer of the LED body, with Cr deposition rate;

[0108] S2: Stop Cr evaporation; Cr vapor deposition; stop Cr vapor deposition to obtain The second Cr layer, on the second Cr layer with Pt vapor deposition;

[0109] S3: Stop Pt evaporation; Pt vapor deposition; stop Pt vapor deposition to obtain The first Pt layer, on the first Pt layer with Cr vapor deposition;

[0110] S4: Stop Cr vapor deposition; Cr vapor deposition; stop Cr vapor deposition to obtain The third Cr layer, in the third Cr layer Pt vapor deposition;

[0111] S5: Stop Pt evaporation; Pt vapor deposition; stop Pt vapor deposition to obtain a second Pt layer, and then on the second Pt layer... Au vapor deposition;

[0112] S6: Stop Au evaporation; Au vapor deposition, stop Au vapor deposition to obtain The first Au layer, on the first Au layer... Evaporation of Ti; Stopping the evaporation of Ti; "with "Evaporate Ti; Stop evaporating Ti" The fourth Ti layer is obtained; thus, the electrode structure of the flip-chip LED chip for automotive lighting is obtained.

[0113] Example 4

[0114] Please refer to Figure 1 A flip-chip LED chip electrode structure for automotive lighting and its manufacturing method, comprising the following steps:

[0115] S1: On the silver mirror protective layer of the LED body, with Cr deposition rate;

[0116] S2: Stop Cr evaporation; Cr vapor deposition; stop Cr vapor deposition to obtain The second Cr layer, on the second Cr layer with Pt vapor deposition;

[0117] S3: Stop Pt evaporation; Pt vapor deposition; stop Pt vapor deposition to obtain The first Pt layer, on the first Pt layer with Cr vapor deposition;

[0118] S4: Stop Cr vapor deposition; Cr vapor deposition; stop Cr vapor deposition to obtain The third Cr layer, in the third Cr layer Pt vapor deposition;

[0119] S5: Stop Pt evaporation; Pt vapor deposition; stop Pt vapor deposition to obtain a second Pt layer, and then on the second Pt layer... Au vapor deposition;

[0120] S6: Stop Au evaporation; Au vapor deposition, stop Au vapor deposition to obtain The first Au layer, on the first Au layer... Evaporation of Ti; Stopping the evaporation of Ti; "with "Evaporate Ti; Stop evaporating Ti" The fourth Ti layer is obtained; thus, the electrode structure of the flip-chip LED chip for automotive lighting is obtained.

[0121] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent modifications made based on the content of the present invention specification and drawings, or direct or indirect applications in related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A method for generating the electrode structure of a flip-chip automotive LED chip, characterized in that, Includes the following steps: S1: Cr is deposited on the silver mirror protective layer of the LED; S2: Stop Cr vapor deposition; stop Pt vapor deposition; S3: Stop Pt vapor deposition, start Cr vapor deposition; S4: Stop Cr vapor deposition and start Pt vapor deposition; S5: Stop Pt evaporation and start Au evaporation; S6: Stop the evaporation of Au, and evaporate Ti; stop the evaporation of Ti to obtain the flip-chip LED chip electrode structure. It also includes S0.1, S0.2, and S0.3 preceding S1; S0.1: A gallium nitride-based N-layer, quantum well layer, and P-layer are sequentially grown on a sapphire substrate using a metal-organic chemical vapor deposition method. S0.2: A silver mirror reflective layer is sputtered onto the P layer; S0.3: Deposit the silver mirror protective layer onto the silver mirror reflective layer.

2. The method for generating the electrode structure of the flip-chip automotive LED chip according to claim 1, characterized in that, Specifically, S0.3 involves sequentially depositing a first Cr layer, a first AlCu layer, a first Ti layer, a second AlCu layer, a second Ti layer, a third AlCu layer, and a third Ti layer on the silver mirror reflective layer.

3. The method for generating the electrode structure of the flip-chip automotive LED chip according to claim 1, characterized in that, Specifically, S0.2 involves: depositing an ITO layer on the P layer, with the edge of the ITO layer 10-18 micrometers away from the P layer; and sputtering a silver mirror reflective layer on the P layer and the ITO layer.

4. The method for generating the electrode structure of the flip-chip automotive LED chip according to claim 1, characterized in that, The step S6, "stopping the evaporation of Ti to obtain the flip-chip LED chip electrode structure," specifically involves stopping the evaporation of Ti, depositing a silicon dioxide layer, and opening a P-type opening on the silicon dioxide layer for electrical connection to the silver mirror protective layer, thereby obtaining the flip-chip LED chip electrode structure.

5. The method for generating the electrode structure of the flip-chip automotive lamp LED chip according to claim 4, characterized in that, The "stop Ti evaporation and deposit silicon dioxide layer" step in S6 specifically involves: stopping Ti evaporation to obtain an LED semi-finished product, placing the LED semi-finished product into the deposition chamber, setting the deposition chamber to 200-260 degrees, depositing silicon dioxide, and simultaneously introducing silane into the deposition chamber at 150-250 sccm and nitrous oxide into the deposition chamber at 1000-1500 sccm; the silicon dioxide deposition thickness is 11000-13000 Å.

6. The method for generating the electrode structure of the flip-chip automotive LED chip according to claim 1, characterized in that, The electrode structure and its generation method of the inverted automotive LED chip are as follows: S1: Cr is deposited on the silver mirror protective layer of the LED at a deposition rate of 0.15-0.25 Å / S; S2: Stop Cr evaporation; "Evaporate Cr at 0.5-1.5 Å / S; Stop Cr evaporation to obtain a second Cr layer of 400-600 Å, and then deposit Pt on the second Cr layer at 1-3 Å / s. S3: Stop Pt evaporation; "Evaporate Pt at 1-3 Å / S; Stop Pt evaporation" to obtain a first Pt layer of 900-1100 Å, and Cr evaporate on the first Pt layer at 0.5-1.5 Å / S; S4: Stop Cr evaporation; "Evaporate Cr at 0.5-1.5 Å / S; Stop Cr evaporation to obtain a third Cr layer of 400-600 Å, and then deposit Pt on the third Cr layer at 1-3 Å / s. S5: Stop Pt evaporation; "Evaporate Pt at 1-3 Å / S; Stop Pt evaporation" to obtain the second Pt layer, and then evaporate Au on the second Pt layer at 4-6 Å / S; S6: Stop Au evaporation; "Evaporate Au at 4-6 Å / S, stop Au evaporation" to obtain a 400-600 Å first Au layer, then evaporate Ti on the first Au at 0.5-1.5 Å / S; stop Ti evaporation; "Evaporate Ti at 0.5-1.5 Å / S; stop Ti evaporation" to obtain a 200-400 Å fourth Ti layer; The electrode structure of the inverted automotive LED chip was obtained.

7. The method for generating the electrode structure of the flip-chip automotive lamp LED chip according to claim 2, characterized in that, The vapor deposition process of the first Cr layer of S0.3 is as follows: Cr 20-40 Å is vapor deposited at a deposition rate of 0.1-0.3 Å / S; the vapor deposition process of the first AlCu layer, the second AlCu layer and the third AlCu layer of S0.3 is as follows: first, AlCu 300-500 Å is vapor deposited at 0.5-1.5 Å / S, then AlCu 300-500 Å is vapor deposited at 5-7 Å / S, and finally AlCu 300-500 Å is vapor deposited at 0.5-1.5 Å / S.

8. The method for generating the electrode structure of the flip-chip automotive lamp LED chip according to claim 2, characterized in that, The vapor deposition process for the first Ti layer, the second Ti layer, and the third Ti layer of S0.3 is as follows: first, Ti 400-600 Å is vapor deposited at 0.5-1.5 Å / S, and finally Ti 400-600 Å is vapor deposited at 1-3 Å / S.

9. A flip-chip LED chip electrode structure for automotive lighting generated by the method for generating a flip-chip LED chip electrode structure according to any one of claims 1-8.

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