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Epitaxial growth method for increasing LED internal quantum efficiency

An internal quantum efficiency and epitaxial growth technology, which is applied in the field of LED epitaxy design and application, can solve the problems of low internal quantum efficiency and the influence of the recombination of electrons and holes of InGaN materials with lattice fitness.

Active Publication Date: 2016-01-20
XIANGNENG HUALEI OPTOELECTRONICS
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Problems solved by technology

[0003] At present, the domestic LED industry is developing vigorously. LED products have the advantages of energy saving, environmental protection, and long life. With the popularization of LED products, the competition in the industry is gradually fierce, and customer requirements are gradually increasing. It is generally recognized as yuan / lumen; lumen is defined as the luminous intensity of LEDs, and high-power LEDs are defined as yuan / light efficiency; lumens and light efficiency are related to the internal and external quantum efficiency of LEDs; the light-emitting layer grown by traditional LED epitaxial growth methods generally adopts InGaN / GaN material superlattice, InGaN and GaN have a large lattice fit, which affects the recombination of electrons and holes in InGaN materials, and the internal quantum efficiency is not high

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  • Epitaxial growth method for increasing LED internal quantum efficiency
  • Epitaxial growth method for increasing LED internal quantum efficiency
  • Epitaxial growth method for increasing LED internal quantum efficiency

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Embodiment 1

[0035] The present invention provides a kind of epitaxial growth method that improves LED inner quantum efficiency (the epitaxial layer structure sees figure 1 ), including: processing the substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, growing a light-emitting layer, growing a P-type AlGaN layer, and growing a Mg-doped P-type GaN layer. layer, cooling down,

[0036] The growth luminescent layer is further:

[0037] Keep the pressure of the reaction chamber at 300mbar-400mbar, the temperature at 700°C-750°C, and the flow rate of NH at 50000sccm-70000sccm 3 , 20sccm-40sccm TMGa, 1500sccm-2000sccm TMIn, 100L / min-130L / min N 2 , grow In-doped 2.5nm-3.5nm In x Ga (1-x) N layer, x=0.20-0.25, luminescence wavelength 450nm-455nm, pressure, temperature and NH in the growth process 3 , TMGa, TMIn, N 2 The amount is kept constant; then the temperature is raised to 750°C-850°C, the pressure of the reaction cha...

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Abstract

The invention provides an epitaxial growth method for increasing LED internal quantum efficiency. The method comprises steps of processing a substrate; generating a low-temperature buffer layer GaN; generating an undoped GaN layer; generating an Si-doped N-type GaN layer; generating a light emitting layer; generating a P-type AlGaN layer; generating an Mg-doped P-type GaN layer; and reducing temperature and cooling.

Description

technical field [0001] This application relates to the technical field of LED epitaxial design application, in particular, to an epitaxial growth method for improving the internal quantum efficiency of LED. Background technique [0002] At present, LED is a kind of solid-state lighting. The advantages of small size, low power consumption, long service life, high brightness, environmental protection, and durability are recognized by consumers. The scale of domestic LED production is also gradually expanding; The demand for growing epitaxial wafers is increasing day by day, and how to grow better epitaxial wafers is getting more and more attention. Because the quality of epitaxial layer crystals improves, the performance of LED devices can be improved, and the luminous efficiency, life, anti-aging ability, antistatic ability, and stability of LEDs will change with With the improvement of the crystal quality of the epitaxial layer, it is improved. [0003] At present, the dome...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/32
CPCH01L33/0075H01L33/325
Inventor 张宇苗振林
Owner XIANGNENG HUALEI OPTOELECTRONICS
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