Epitaxial growth method for improving luminous efficiency of LED (Light Emitting Diode) device

An LED device, epitaxial growth technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as low hole transport and injection efficiency, low Mg activation efficiency, and reduced luminous efficiency, and achieve improved activation efficiency and improved activation efficiency. , the effect of light efficiency improvement

Active Publication Date: 2016-01-13
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The demand for LED brightness and luminous efficacy in the market is increasing day by day. The existing LED epitaxial electron blocking layer pAlGaN has many shortcomings. The activation energy of Mg in AlGaN material is very high, the activat

Method used

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  • Epitaxial growth method for improving luminous efficiency of LED (Light Emitting Diode) device
  • Epitaxial growth method for improving luminous efficiency of LED (Light Emitting Diode) device
  • Epitaxial growth method for improving luminous efficiency of LED (Light Emitting Diode) device

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Embodiment 1

[0048] combine figure 1 with figure 2 , this embodiment provides an epitaxial growth method for improving the light efficiency of LED devices, specifically as follows:

[0049] Step 101, processing the sapphire substrate 201: in a hydrogen atmosphere at 1000°C, inject 100 L / min of H2, keep the reaction chamber pressure at 100 mbar, and process the sapphire substrate 201 for 8 minutes;

[0050] Step 102, grow low-temperature buffer layer 202: lower the temperature to 500°C, keep the reaction chamber pressure at 300mbar, feed NH3 at a flow rate of 10000sccm, TMGa at 50sccm, and H2 at 100L / min, and grow a 20nm-thick sapphire substrate 201 Low temperature buffer layer 202;

[0051] Step 103, annealing the low-temperature buffer layer 202: raise the temperature to 1000°C, keep the pressure in the reaction chamber at 300mbar, feed in NH3 at a flow rate of 30000sccm, H2 at 100L / min, and keep the temperature stable at 300°C to corrode the low-temperature buffer layer 202 into irre...

Embodiment 2

[0064] This embodiment provides an epitaxial growth method for improving the light efficiency of LED devices, specifically as follows:

[0065] Step 201, processing the sapphire substrate 201: in a hydrogen atmosphere at 1100°C, inject 130 L / min of H2, keep the reaction chamber pressure at 300 mbar, and process the sapphire substrate 201 for 10 minutes;

[0066] Step 202, grow low-temperature buffer layer 202: lower the temperature to 600°C, keep the reaction chamber pressure at 600mbar, feed NH3 at a flow rate of 20,000sccm, TMGa at 100sccm, and H2 at 130L / min, and grow a sapphire substrate 201 with a thickness of 40nm Low temperature buffer layer 202;

[0067] Step 203, annealing the low-temperature buffer layer 202: raise the temperature to 1100°C, keep the reaction chamber pressure at 600mbar, feed in NH3 at a flow rate of 40,000sccm, and H2 at 130L / min, and keep the temperature stable at 500°C to corrode the low-temperature buffer layer 202 into irregular islands;

[00...

Embodiment 3

[0080] Step 301, processing the sapphire substrate 201: in a hydrogen atmosphere at 1050°C, inject 115 L / min of H2, keep the reaction chamber pressure at 200 mbar, and process the sapphire substrate 201 for 9 minutes;

[0081] Step 302, grow the low-temperature buffer layer 202: lower the temperature to 550°C, keep the reaction chamber pressure at 450mbar, feed NH3 at a flow rate of 15000sccm, TMGa at 75sccm, and H2 at 115L / min, and grow a 30nm-thick sapphire substrate 201 Low temperature buffer layer 202;

[0082] Step 303, annealing the low-temperature buffer layer 202: raise the temperature to 1050°C, keep the pressure of the reaction chamber at 450mbar, feed in NH3 at a flow rate of 35000sccm, and H2 at 115L / min, and keep the temperature stable at 400°C to corrode the low-temperature buffer layer 202 into irregular islands;

[0083] Step 304, grow the N-type GaN layer 203 not doped with Si: raise the temperature to 1100°C, keep the reaction chamber pressure at 450mbar, fe...

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Abstract

The invention discloses an epitaxial growth method for improving the luminous efficiency of an LED (Light Emitting Diode) device. The epitaxial growth method comprises the following steps: treating a sapphire substrate; growing a low-temperature buffer layer; annealing the low-temperature buffer layer; growing an N-type GaN layer without being doped with Si; growing a first Si-doped N-type GaN layer; growing a second Si-doped N-type GaN layer; growing a luminous layer; growing a pAlGaN/pInN/pInGaN super-lattice layer; growing a high-temperature Mg-doped P-type GaN layer; finally, cooling to 650-680 DEG C, preserving the heat for 20-30min, closing a heating system and a gas supply system, and performing furnace cooling. According to the method, the new material pAlGaN/pInN/pInGaN super-lattice layer is used as a new electron blocking layer, and the activation energy of Mg is reduced by using the atomic activity of In, so that the activation efficiency of Mg is improved; smooth transition from pAlGaN to pInGaN is realized in the super-lattice through the transition of pInN, thus solving the problem that hole injection is blocked by high contact interface energy band due to high adaptability of pAlGaN and pInGaN lattices.

Description

technical field [0001] The invention relates to the technical field of semiconductor lighting, in particular to an epitaxial growth method for improving the light efficiency of LEDs. Background technique [0002] At present, LED is a kind of solid-state lighting. The advantages of small size, low power consumption, long service life, high brightness, environmental protection, and durability are recognized by consumers. The scale of domestic LED production is also gradually expanding. [0003] The demand for LED brightness and luminous efficacy in the market is increasing day by day. The existing LED epitaxial electron blocking layer pAlGaN has many shortcomings. The activation energy of Mg in AlGaN material is very high, the activation efficiency of Mg is very low, and the hole concentration is low. The mobility of the high energy band AlGaN material is very low, and the transport and injection efficiency of holes is low, which leads to the reduction of the luminous efficien...

Claims

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Application Information

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IPC IPC(8): H01L33/04H01L33/14H01L33/00
CPCH01L33/005H01L33/04H01L33/145H01L2933/0033
Inventor 徐平苗振林卢国军
Owner XIANGNENG HUALEI OPTOELECTRONICS
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