Light-emitting diode and manufacturing method thereof

Abstract

The invention discloses a light-emitting diode and a manufacturing method thereof. The light-emitting diode comprises a substrate, a buffering layer, a non-doped layer, an n type semiconductor layer, an active layer, a p type semiconductor layer, a current diffusion layer, a first insertion layer and / or a second insertion layer, wherein the buffering layer, the non-doped layer, the n type semiconductor layer, the active layer, the p type semiconductor layer and the current diffusion layer are positioned on the substrate; the first insertion layer is arranged in the n type semiconductor layer; and the second insertion layer is arranged between the n type semiconductor layer and the active layer. The first insertion layer and the second insertion layer consist of at least one layer of non-doped AlxInyGa1-x-yN layer and / or at least one layer of Si-doped AlxInyGa1-x-yN layer, wherein x and y are more than or equal to 0 and less than 0.2. When current is injected into an n type area, the insertion layers play a role of buffering to prevent electrons from diffusing into a p type area, so the conformity efficiency of the electrons and holes is improved and then the illumination brightness of the light-emitting diode is improved. In addition, the insertion layers can achieve the effect similar to charging and discharging, so the anti-static ability of materials is effectively improved.

Description

technical field [0001] The invention relates to the field of semiconductor light emitting, in particular to a light emitting diode and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (LED, Light Emitting Diode) is used in various fields due to its advantages of long life and low energy consumption, especially as its lighting performance index is greatly improved day by day, LED is often used as a light emitting device in the lighting field. Among them, gallium nitride (GaN) is the representative III-V compound semiconductor due to its wide band gap, high luminous efficiency, high electron saturation drift speed, and stable chemical properties. The field of optoelectronic devices has great application potential and has attracted widespread attention. At present, the general LED structure adopts the direct growth of the current spreading layer (Spreading layer), such as indium gallium nitride layer (InGaN layer) or indium Tin oxide layer (I...

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Problems solved by technology

[0004] CN101694858A patent proposes an LED epitaxial structure and its manufacturing method, the structure is inserted between the light-emitting layer and the p-type nitride layer by undoped Al x In y Ga 1-x-y n-layer and p-type Al x In y Ga 1-x-y The insertion layer composed of n layers alternately protects the ESD protection performance of the material, and does not reduce other properties of the material, but it does not have a significant effect on the uniform diffusion of current.

[0005] CN101183642A patent proposes a preparation method of p-GaN low-resistance ohmic contact, which uses the p-InGaN / p-AlGaN superlattice layer as the top layer of p-GaN to reduce the contact resistance, but this method is not good for the uniformity of the current Diffusion did not have the desired effect

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