Epitaxial growth method for improving GaN-based light-emitting diode (LED) quantum well structure to improve carrier recombination efficiency

A technology for epitaxial growth and recombination efficiency, which is applied in the field of epitaxial growth to improve the quantum well structure of GaN-based LEDs and improve the recombination efficiency of carriers, can solve problems such as limited effect, improve luminous intensity and brightness, reduce defect density, and improve luminous efficiency. Effect

Inactive Publication Date: 2013-01-16
合肥彩虹蓝光科技有限公司
View PDF5 Cites 33 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above method improves the radiative recombination efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Epitaxial growth method for improving GaN-based light-emitting diode (LED) quantum well structure to improve carrier recombination efficiency
  • Epitaxial growth method for improving GaN-based light-emitting diode (LED) quantum well structure to improve carrier recombination efficiency

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0028] Examples of the present invention were implemented using a Vecco K465 series MOCVD system.

[0029] Such as figure 1The shown LED epitaxial structure includes, from bottom to top, substrate 1, low-temperature GaN buffer layer 2, undoped high-temperature GaN buffer layer 3, Si-doped N-type GaN layer 4, shallow quantum well 5, Multi-quantum well light-emitting layer 6, low-temperature P-type GaN layer 7, P-type Al-GaN electron blocking layer 8, high-temperature P-type GaN layer 9, and P-type...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an epitaxial growth method for improving a GaN-based light-emitting diode (LED) quantum well structure to improve carrier recombination efficiency. The method comprises the following steps of: annealing a substrate, and nitriding; growing a low temperature GaN buffer layer; growing a non-doped high temperature GaN buffer layer; growing a Si-doped N-type GaN layer with stable doping density; growing a low temperature shallow quantum well; growing a low temperature multi-quantum well luminous layer, wherein the multi-quantum well luminous layer is divided into three parts which grow under different growth conditions; growing a low temperature P-type GaN layer by taking nitrogen as carrier gas; heating to grow a P-type AlGaN electron barrier layer; growing a high temperature P-type GaN layer; growing a P-type contact layer; and reducing the temperature of a reaction chamber, annealing, and cooling to room temperature. When multi-quantum wells are grown, the position of a PN junction can be regulated in an optimized way, more carriers are captured and recombined, the luminous efficiency is improved, the inner quantum well effect is increased, and a high luminous intensity GaN-based LED is obtained.

Description

technical field [0001] The invention belongs to the technical field of preparation of gallium nitride-based materials, and in particular relates to an epitaxial growth method for improving the GaN-based LED quantum well structure and improving carrier recombination efficiency. Background technique [0002] GaN-based materials are ionic crystals, which form spontaneous polarization due to the misalignment of positive and negative charges; in addition, due to the lattice fit between InGaN and GaN materials, piezoelectric polarization is caused, and then a piezoelectric polarization field is formed. The existence of the polarization field, on the one hand, reduces the equivalent band gap of the quantum well and red-shifts the luminous wavelength; on the other hand, it reduces the overlap of electron and hole wave functions, reducing the probability of their radiative recombination. Another reason that affects the luminous efficiency of the quantum well: the electrons injected i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/06H01L33/00
Inventor 李永李刚郭丽彬
Owner 合肥彩虹蓝光科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap