Epitaxial growth method for improving GaN-based light-emitting diode (LED) quantum well structure to improve carrier recombination efficiency

Abstract

The invention discloses an epitaxial growth method for improving a GaN-based light-emitting diode (LED) quantum well structure to improve carrier recombination efficiency. The method comprises the following steps of: annealing a substrate, and nitriding; growing a low temperature GaN buffer layer; growing a non-doped high temperature GaN buffer layer; growing a Si-doped N-type GaN layer with stable doping density; growing a low temperature shallow quantum well; growing a low temperature multi-quantum well luminous layer, wherein the multi-quantum well luminous layer is divided into three parts which grow under different growth conditions; growing a low temperature P-type GaN layer by taking nitrogen as carrier gas; heating to grow a P-type AlGaN electron barrier layer; growing a high temperature P-type GaN layer; growing a P-type contact layer; and reducing the temperature of a reaction chamber, annealing, and cooling to room temperature. When multi-quantum wells are grown, the position of a PN junction can be regulated in an optimized way, more carriers are captured and recombined, the luminous efficiency is improved, the inner quantum well effect is increased, and a high luminous intensity GaN-based LED is obtained.

Description

technical field [0001] The invention belongs to the technical field of preparation of gallium nitride-based materials, and in particular relates to an epitaxial growth method for improving the GaN-based LED quantum well structure and improving carrier recombination efficiency. Background technique [0002] GaN-based materials are ionic crystals, which form spontaneous polarization due to the misalignment of positive and negative charges; in addition, due to the lattice fit between InGaN and GaN materials, piezoelectric polarization is caused, and then a piezoelectric polarization field is formed. The existence of the polarization field, on the one hand, reduces the equivalent band gap of the quantum well and red-shifts the luminous wavelength; on the other hand, it reduces the overlap of electron and hole wave functions, reducing the probability of their radiative recombination. Another reason that affects the luminous efficiency of the quantum well: the electrons injected i...

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Problems solved by technology

The above method improves the radiative recombination efficiency of quantum wells to a certain extent, but the effect is limited

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